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An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology

  • A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation.

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Metadaten
Author:Matthias HausladenORCiD, Philipp Buchner, Andreas Schels, Simon Edler, Michael BachmannORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC57695.2023.10189001
ISBN:979-8-3503-0143-4
Parent Title (English):2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2023
Release Date:2023/10/20
Tag:Apertures; Field Emission; Field Emission Array; Ions; Laser-Micromachining; Lasers; Micromechanical devices; Silicon; Silicon Field Emission Array; Steady-state; Vacuum systems
First Page:115
Last Page:116
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG