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Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips

  • Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters.

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Metadaten
Author:Mohammad M. Allaham, Philipp Buchner, Rupert SchreinerORCiDGND, Alexandr Knápek
DOI:https://doi.org/10.1109/IVNC52431.2021.9600690
Parent Title (English):2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2021
Release Date:2022/02/07
Tag:Current-voltage characteristics; Limiting; Micromachining; Murphy-Good plot; RESISTANCE; characterization parameter; electron emission; electron source; n-type Si chip; safety; silicon
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG