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Scaling of the field emission current from B-doped Si-tip arrays

  • We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius <; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×10 6 cm -2 ) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (<; 5%) of the current (2-3 nA) than at lower (>; 50 %) and higher currents (>; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (<; 1%) but only a weak increase of the total current with N 0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips.

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Metadaten
Author:Pavel Serbun, Aliaksandr Navitski, Güntner Müller, Rupert SchreinerORCiDGND, Christian PrommesbergerORCiD, Christoph Langer, Florian Dams
DOI:https://doi.org/10.1109/IVNC.2012.6316965
ISBN:978-1-4673-1984-3
ISBN:978-1-4673-1983-6
ISBN:978-1-4673-1982-9
ISSN:2380-6311
ISSN:2164-2370
Parent Title (English):25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012
Publisher:IEEE
Place of publication:Piscataway, N.J.
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2012
Release Date:2022/12/10
Tag:Anodes; B-doped; Current measurement; Iron; Nonhomogeneous media; Voltage control; boron; current scaling; electron field emission; elemental semiconductors; field emitter arrays; silicon
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG