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Efficient and reliable field emission from silicon tip arrays for miniaturized electron sources

  • Silicon-based cathodes with precisely aligned field emitter arrays (FEA) applicable for miniaturized electron sources were successfully developed and fabricated. The cathode chips contain about 3×105 Si tips/cm2 in a triangular array with a tip height of 2.5 μm, tip radius of 20 nm, and lateral distance between tips of 20 μm. Amazingly homogeneous and well-aligned field emission (FE) from all tips (i.e. 100% efficiency) and maximum stable currents of typically 0.1 μA for p- and 0.6 μA for n-type Si were reproducibly achieved. Current-voltage characteristics of p-type Si tips exhibit the expected saturation at around 10 nA due to limited supply of electrons from a depletion layer, while the n-type Si tips show the usual FN behaviour. Additional coating of the Si tips with a 10 nm Au layer resulted in at least 5 times higher average FE current levels i.e. typically 3 μA but lead, however, to a 30% increase of the onset voltage.

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Metadaten
Author:Aliaksandr Navitski, Pavel Serbun, Güntner Müller, Rupert SchreinerORCiDGND, Florian Dams
URL / DOI:https://ieeexplore.ieee.org/document/6004567?arnumber=6004567
ISBN:978-3-00-035081-8
ISBN:978-1-4577-1243-2
ISSN:2380-6311
ISSN:2164-2370
Parent Title (English):2011 24th International Vacuum Nanoelectronics Conference ; 18-22 July 2011 Wuppertal
Publisher:IEEE
Place of publication:Piscataway, NJ
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2011
Release Date:2022/12/10
Tag:cathodes; coatings; elemental semiconductors; field emission; field emitter arrays; miniaturized electron sources; silicon tips; structured cold cathode
First Page:71
Last Page:72
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG