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Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips

  • Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips.

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Metadaten
Author:Philipp Buchner, Vitali Bomke, Matthias HausladenORCiD, Simon EdlerORCiD, Michael BachmannORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC52431.2021.9600756
ISBN:978-1-6654-2589-6
Parent Title (English):2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2021
Release Date:2022/02/15
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG