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Less strain energy despite fewer misfit dislocations: the impact of ordering

  • The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation.

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Author:Thomas Schmidt, Roland Kröger, Jan Ingo Flege, Michael Horn-von Hoegen, T. Clausen, J. Falta, Aandreas Janzen, P. Zahl, P. Kury, Martin KammlerORCiDGND
DOI:https://doi.org/10.1103/PhysRevLett.96.066101
Parent Title (English):Physical review letters
Publisher:APS
Document Type:Article
Language:English
Year of first Publication:2006
Release Date:2022/11/24
Volume:96
Issue:6
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Nanoanalytik und Halbleiterchemie (Nanochem)
Begutachtungsstatus:peer-reviewed
Publication:Externe Publikationen
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG