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Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction

  • A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented.

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Metadaten
Author:Klaus Sokolowski-Tinten, Michael Horn-von Hoegen, D. von der Linde, Andrea Cavalleri, C. W. Siders, F. L. H. Brown, D. M. Leitner, Csaba Tóth, Jeff A. Squier, C. P. J. Barty, K. R. Wilson, Martin KammlerORCiDGND
DOI:https://doi.org/10.1051/jp4:2001290
Parent Title (English):Journal de Physique IV
Publisher:EDP
Document Type:Article
Language:English
Year of first Publication:2001
Release Date:2022/11/24
Volume:11
Issue:Pr2
First Page:473
Last Page:477
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Nanoanalytik und Halbleiterchemie (Nanochem)
Publication:Externe Publikationen
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG