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Gated p-Si field emission cathode applied in an ionization vacuum gauge

  • A commercial Bayard-Alpert ionization vacuum gauge was equipped with a field emission electron source based on a cathode consisting of an array of 16 gated, p-doped, and DLC-coated Si-tips and characterized. An anode current of about 1.3 μA led to an ion current of 7 fA at 3×10 -7 mbar and 0.8 pA at 4×10 -5 mbar. Whereas at pressures higher than 4×10 -5 mbar the emission current of the electron source decreased, the ratio of ion and anode current remained linear. A nearly constant sensitivity of ~ 17 mbar -1 of the ionization vacuum gauge within the investigated pressure range was depicted.

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Metadaten
Author:Christoph LangerORCiD, Christian PrommesbergerORCiD, Robert Damian ŁawrowskiORCiD, Rupert SchreinerORCiDGND, Yifeng Huang, Juncong She
DOI:https://doi.org/10.1109/IVNC.2016.7551500
ISSN:2380-6311
Parent Title (English):29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2016
Release Date:2021/05/31
Tag:DLC; Si; electron source; field emission; field emitter array; ionization vacuum gauge
First Page:145
Last Page:146
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik