Enhanced field emission from p-doped black silicon on pillar structures
- Aligned square arrays of black silicon (b-Si) on top of pillars were fabricated on p-type silicon substrate by a deep-etching step combined with a b-Si process. Two 10×10 arrays with pillar heights of 8 μm and 20 μm and one b-Si reference sample without pillars were investigated. Integral field emission (FE) measurements of the arrays yielded rather low onset-fields between 6.4 V/μm and 13.5 V/μm and field enhancement factors between 430 and 800. The I-V curves showed typical Fowler-Nordheim behavior for low fields, whereas a saturation region was observed at higher fields. The maximum integral current in the saturation region was 8 μA at a field of 20 V/μm. The stability of the emission current was investigated over 3 hours and revealed moderate fluctuations of ± 8% in the saturation region. Voltage scans showed well-aligned FE from nearly all pillars.
Author: | Christoph LangerORCiD, Christian PrommesbergerORCiD, Robert Damian ŁawrowskiORCiD, F. Müller, Rupert SchreinerORCiDGND, Pavel Serbun, Günter Müller |
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DOI: | https://doi.org/10.1109/IVNC.2015.7225547 |
Parent Title (English): | 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China |
Publisher: | IEEE |
Document Type: | conference proceeding (article) |
Language: | English |
Year of first Publication: | 2015 |
Release Date: | 2022/05/06 |
Tag: | CATHODES; Current measurement; Etching; FABRICATION; Iron; Vacuum technology; black silicon; field emission; field emitter array; silicon |
First Page: | 104 |
Last Page: | 105 |
Institutes: | Fakultät Angewandte Natur- und Kulturwissenschaften |
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik | |
Begutachtungsstatus: | peer-reviewed |
research focus: | Sensorik |
Licence (German): | Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG |