The search result changed since you submitted your search request. Documents might be displayed in a different sort order.
  • search hit 2 of 5
Back to Result List

Enhanced field emission from p-doped black silicon on pillar structures

  • Aligned square arrays of black silicon (b-Si) on top of pillars were fabricated on p-type silicon substrate by a deep-etching step combined with a b-Si process. Two 10×10 arrays with pillar heights of 8 μm and 20 μm and one b-Si reference sample without pillars were investigated. Integral field emission (FE) measurements of the arrays yielded rather low onset-fields between 6.4 V/μm and 13.5 V/μm and field enhancement factors between 430 and 800. The I-V curves showed typical Fowler-Nordheim behavior for low fields, whereas a saturation region was observed at higher fields. The maximum integral current in the saturation region was 8 μA at a field of 20 V/μm. The stability of the emission current was investigated over 3 hours and revealed moderate fluctuations of ± 8% in the saturation region. Voltage scans showed well-aligned FE from nearly all pillars.

Export metadata

Additional Services

Share in Twitter Search Google Scholar Statistics
Metadaten
Author:Christoph LangerORCiD, Christian PrommesbergerORCiD, Robert Damian ŁawrowskiORCiD, F. Müller, Rupert SchreinerORCiDGND, Pavel Serbun, Günter Müller
DOI:https://doi.org/10.1109/IVNC.2015.7225547
Parent Title (English):2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2015
Release Date:2022/05/06
Tag:CATHODES; Current measurement; Etching; FABRICATION; Iron; Vacuum technology; black silicon; field emission; field emitter array; silicon
First Page:104
Last Page:105
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG