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Comparison of integral and local field-emission properties of Mo-coated p-Si tip arrays

  • Silicon tip arrays were fabricated by means of reactive ion etching followed by oxidation for final sharpening and molybdenum thin film coating. The field-emission (FE) properties of these Mo-coated p-Si tip arrays were systemically investigated by different measurement techniques. Integral measurements in diode configuration yielded a turn-on field (for 1 nA) of 22 V/μm and nearly stable FE currents up to 6.6 μA at 38 V/μm. The effective field enhancements factor extracted from the FN plots is about 180. Detailed investigations of these FE arrays were also performed by means of field emission scanning microscopy combined with electron microscopy. A rather limited efficiency of the tips (50% at 1500 V) and FE homogeneity (180 nA at 700 V) might be correlated with the varying morphology of the tips and the presence of oxides. Local I-V measurements of selected single tips revealed both activation and deactivation effects, which finally resulted in nearly reproducible I-V curves. Current stability measurements at a constant voltage showed rather large fluctuations (0.1-1 μA) of the FE current, which could be reduced up to 1.7% by using of a PID-regulated voltage source. SEM images showed unchanged tip shape after the current processing.

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Metadaten
Author:Christian PrommesbergerORCiD, Christoph LangerORCiD, Robert Damian ŁawrowskiORCiD, F. Muller, Florian Dams, Rupert SchreinerORCiDGND, Pavel Serbun, Günter Müller
DOI:https://doi.org/10.1109/IVNC.2015.7225579
Parent Title (English):2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2015
Release Date:2022/05/05
Tag:CATHODES; Coatings; Current measurement; Iron; Mo-coated; Scanning electron microscopy; Vacuum technology; field emission; p-Si tip; silicon; tip arrays
First Page:192
Last Page:193
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG