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An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission

  • Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission.

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Metadaten
Author:Philipp Buchner, Matthias HausladenORCiD, Andreas Schels, Florian Herdl, Simon EdlerORCiD, Michael BachmannORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC57695.2023.10188878
ISBN:979-8-3503-0143-4
Parent Title (English):2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2023
Release Date:2023/10/20
Tag:Electron optics; Glass; Insulators; Optical device fabrication; Power system stability; Semiconductor device measurement; Stimulated emission
First Page:6
Last Page:8
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG
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