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Current dependent performance test used on different types of silicon field emitter arrays

  • A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures.

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Metadaten
Author:Andreas Schels, Simon EdlerORCiD, Walter Hansch, Michael BachmannORCiD, F. Herdl, F. Dusberg, Magdalena Eder, M. Meyer, M. Dudek, A. Pahlke, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC52431.2021.9600787
ISBN:978-1-6654-2589-6
Parent Title (English):2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France
Publisher:IEEE
Place of publication:Piscataway, NJ
Editor:Stephen Purcell, Jean-Paul Mazellier
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2021
Release Date:2022/04/11
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG