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Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters

  • In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth).

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Metadaten
Author:Fabian Hecht, Florian Bauereiβ, Josef Sellmair, Philipp Buchner, Matthias HausladenORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC57695.2023.10188960
ISBN:979-8-3503-0143-4
Parent Title (English):2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2023
Release Date:2023/10/17
Tag:Behavioral sciences; Carbon dioxide; Current measurement; Electron beams; Nanostructures; Silicon; Tungsten
First Page:160
Last Page:162
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG