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A One-Dimensional Analytical Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET

  • A one-dimensional analytical model for dual-gate-controlled SOI MOSFETs is presented and applied to a stacked p-channel MOSFET fabricated by epitaxial lateral overgrowth (ELO). The authors found and modeled a nonlinear dependence of front-gate threshold voltage on back-gate voltage if threshold is defined by a constant current instead of a constant silicon-surface potential. It is demonstrated by comparison of subthreshold slopes that surface potentials are not pinned to the onset of strong inversion or accumulation. Accurate one-dimensional modeling is a necessity for device characterization and a precondition for general SOI models for circuit simulation.< >

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Metadaten
Author:Martin J. W. Schubert, Bernd Höfflinger, René P. Zingg
DOI:https://doi.org/10.1109/55.116927
Parent Title (English):IEEE Electron Device Letters
Document Type:Article
Language:English
Year of first Publication:1991
Release Date:2021/04/01
Volume:12
Issue:9
First Page:489
Last Page:491
Institutes:Fakultät Elektro- und Informationstechnik
Fakultät Elektro- und Informationstechnik / Labor Elektronik
Begutachtungsstatus:peer-reviewed
Publication:Externe Publikationen
research focus:Produktion und Systeme
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