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1D Modeling of SOI MOSFETs Using Distinct Quasi-Fermi Potentials

  • Distinct electron and hole quasi-Fermi potentials, øf,n and øf,p, are included into a one-dimensional SOI MOSFET model that accounts for finite inversion and depletion layer thicknesses. The inclusion of øf,n, øf,p in the nonlinear analytical model is demonstrated to describe phenomena like kink effect and the multistable-charge-controlled-memory effect (MCCM) in SOI MOSFETs. The calculation of øf,p(t) depends on the device history and generation/recombination rates.

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Metadaten
Author:Martin J. W. Schubert, Bernd Höfflinger, D. Schröder, René P. Zingg
DOI:https://doi.org/10.1016/0167-9317(91)90221-X
Parent Title (English):Microelectronic Engineering
Document Type:Article
Language:English
Year of first Publication:1991
Release Date:2021/04/01
Volume:15
Issue:1-4
First Page:237
Last Page:240
Konferenzangabe:21st European Solid State Device Research Conference (Essderc '91), 16-19 September 1991, Montreux, Suisse
Institutes:Fakultät Elektro- und Informationstechnik
Fakultät Elektro- und Informationstechnik / Labor Elektronik
Publication:Externe Publikationen
research focus:Produktion und Systeme