A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET
- An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.
Author: | Martin J. W. Schubert, Bernd Höfflinger, René P. Zingg |
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DOI: | https://doi.org/10.1016/0749-6036(90)90218-V |
Parent Title (English): | Superlattices and Microstructures |
Publisher: | Elsevier |
Document Type: | conference proceeding (article) |
Language: | English |
Year of first Publication: | 1990 |
Release Date: | 2021/04/01 |
Volume: | 7 |
Issue: | 4 |
First Page: | 323 |
Last Page: | 326 |
Konferenzangabe: | Int. Conf. Phys. Electro-Opt. Microstruct. and Microdevices (ICPEOM'90), 5th, July 30 - Aug. 3 1990, Heraklion, Crete, Greece |
Institutes: | Fakultät Elektro- und Informationstechnik |
Fakultät Elektro- und Informationstechnik / Labor Elektronik | |
Publication: | Externe Publikationen |
research focus: | Produktion und Systeme |