• search hit 19 of 27
Back to Result List

A New Analytical Charge Model for the Dual-Gate-Controlled Thin-Film SOI MOSFET

  • An analytical model for dual-gate-controlled SOI MOSFETs is presented, assuming uniformly doped p-silicon films. It is restricted to electron inversion layers and depletion regions, neglecting hole densities. It allows to account for the spatial description of electronic quantities in the silicon film. Due to the non-linearities of the semiconductor equations the model parameters must be extracted iteratively. Some applications are presented to demonstrate the usefulness of the model.

Export metadata

Additional Services

Share in Twitter Search Google Scholar Statistics
Metadaten
Author:Martin J. W. Schubert, Bernd Höfflinger, René P. Zingg
DOI:https://doi.org/10.1016/0749-6036(90)90218-V
Parent Title (English):Superlattices and Microstructures
Publisher:Elsevier
Document Type:conference proceeding (article)
Language:English
Year of first Publication:1990
Release Date:2021/04/01
Volume:7
Issue:4
First Page:323
Last Page:326
Konferenzangabe:Int. Conf. Phys. Electro-Opt. Microstruct. and Microdevices (ICPEOM'90), 5th, July 30 - Aug. 3 1990, Heraklion, Crete, Greece
Institutes:Fakultät Elektro- und Informationstechnik
Fakultät Elektro- und Informationstechnik / Labor Elektronik
Publication:Externe Publikationen
research focus:Produktion und Systeme