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Gated p-Si field emitter arrays for sensor applications

  • We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V.

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Metadaten
Author:Christian PrommesbergerORCiD, Christoph LangerORCiD, Robert Damian ŁawrowskiORCiD, Florian Dams, Rupert SchreinerORCiDGND, Robert Damian ŁawrowskiORCiD
DOI:https://doi.org/10.1109/IVNC.2015.7225567
Parent Title (English):2015 28th International Vacuum Nanoelectronics Conference (IVNC)
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2015
Release Date:2022/05/25
Tag:CATHODES; Current measurement; Current stabilization; Iron; Logic gates; Semiconductor device measurement; field emission; integrated gate-electrode; semiconductor; silicon; silicon tip array
First Page:164
Last Page:165
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG