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Field emission properties of p-type silicon tips decorated with tungsten nanoparticles

  • An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments.

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Metadaten
Author:Victor I. Kleshch, Pavel Serbun, Anton Orekhov, Dirk Lützenkirchen-HechtORCiD, Alexander N. Obraztsov, Christian PrommesbergerORCiD, Christoph LangerORCiD, Rupert SchreinerORCiDGND, Dirk Lutzenkirchen-HechtORCiD
DOI:https://doi.org/10.1109/IVNC.2017.8051580
Parent Title (English):2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2017
Release Date:2022/05/05
Tag:Current measurement; Ions; Iron; Scanning electron microscopy; Tungsten; field emission; metal nanoparticles; nanoparticles; p-type silicon; silicon
First Page:138
Last Page:139
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG