Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition
- Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.
Author: | Robert Damian ŁawrowskiORCiD, Christoph LangerORCiD, Rupert SchreinerORCiDGND, J. Sellmair |
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DOI: | https://doi.org/10.1109/IVNC.2018.8520059 |
Parent Title (English): | International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan |
Publisher: | IEEE |
Document Type: | conference proceeding (article) |
Language: | English |
Year of first Publication: | 2018 |
Release Date: | 2021/05/27 |
Tag: | MeCpPtMe3; field emission; focused electron beam induced deposition; nano emitter |
Pagenumber: | 1-2 |
Institutes: | Fakultät Angewandte Natur- und Kulturwissenschaften |
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik | |
Begutachtungsstatus: | peer-reviewed |
research focus: | Produktion und Systeme |