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Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition

  • Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V.

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Metadaten
Author:Robert Damian ŁawrowskiORCiD, Christoph LangerORCiD, Rupert SchreinerORCiDGND, J. Sellmair
DOI:https://doi.org/10.1109/IVNC.2018.8520059
Parent Title (English):International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2018
Release Date:2021/05/27
Tag:MeCpPtMe3; field emission; focused electron beam induced deposition; nano emitter
Pagenumber:1-2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme