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Fabrication and simulation of silicon structures with high aspect ratio for field emission devices

  • To obtain higher field enhancement factors of Si-tip structures, we present an improved fabrication process utilizing reactive-ion etching (RIE) with an inductively coupled plasma (ICP). In our design, a pillar under the tips is realized by a combination of RIE with ICP. With adjusted power settings (≈ 240 W) and step times (<; 5 s), vertical slopes with a low roughness of approximately 10 nm to 20 nm are possible. The remaining silicon is oxidized thermally to sharpen the emitters. A final tip radius of R <; 20 nm is obtained for the tips of the emitters. The pillar height HP can be mainly adjusted by the duration of the ICP-etching step. A total emitter height of H ≈ 6 μm with a pillar height of HP ≈ 5 μm is achieved. Simulations with COMSOL Multiphysics® are applied to calculate the field enhancement factor β. A two-dimensional model is used in rotational symmetry. In addition to the previous model, a pillar with a varying diameter ØP and height HP is added. A conventional emitter (H = 1 μm and R = 20 nm) placed on a pillar of the height HP ≈ 5 μm approximately results in a three times higher β-factor (β≈ 105). By decreasing the diameter ØP a slight increase of the β-factor is observed. However, the aspect ratio of the emitter mainly influences on the β-factor.

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Metadaten
Author:Robert Damian ŁawrowskiORCiD, Christoph LangerORCiD, Christian PrommesbergerORCiD, Florian Dams, Michael BachmannORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2014.6894805
Parent Title (English):2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2014
Release Date:2022/05/06
Tag:Anodes; CATHODES; FABRICATION; Iterative closest point algorithm; Lead; field emission; field emitter array; field enhancement factor; silicon tips
First Page:193
Last Page:194
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG