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Field emission behavior of single n- and p-type black Si pillar structures

  • We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power.

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Metadaten
Author:Pavel Serbun, V. Porshyn, Günter Müller, Dirk Lützenkirchen-HechtORCiD, Christian PrommesbergerORCiD, Christoph LangerORCiD, Robert Damian ŁawrowskiORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2018.8520292
Parent Title (English):International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2018
Release Date:2021/05/27
Tag:black silicon; field emission; photoemission
Pagenumber:1-2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik