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Photosensitivity of electron field emission from B-doped Si-tip arrays

  • The electron current from field-emitting B-doped Si-tip arrays under illumination was studied. An improved cathode design with a patch of 271 tips yielded a reproducible cathode current between 0.2-2000 nA in the electric field range of 3.8-6.6 V/μm. The plateau in the Fowler-Nordheim plot shows the actual carrier depletion and leads to a very stable emission at ~1 μA with a current noise of less than 3.3 %. Color-filtered halogen lamp illumination was used to investigate the photo-sensitivity of the saturation current. The intensity-normalized current switching ratio increases nonlinearly with the photon energy. This hints either for secondary generation in the conduction band or deeper valence band excitation. The first is supported by a rough estimation of the quantum efficiency. Further experiments with a tunable laser and electron spectroscopy are planned.

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Metadaten
Author:Benjamin Bornmann, Stephan Mingels, Pavel Serbun, Dirk Lützenkirchen-HechtORCiD, Güntner Müller, Christian PrommesbergerORCiD, Christoph Langer, Florian Dams, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2012.6316980
ISBN:978-1-4673-1984-3
ISBN:978-1-4673-1983-6
ISBN:978-1-4673-1982-9
ISSN:2380-6311
ISSN:2164-2370
Parent Title (English):25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2012
Release Date:2022/12/10
Tag:boron; electron field emission; electron spectroscopy; elemental semiconductors; field emitter arrays; halogens; lamps; lighting; p-doped Si tips; photosensitivity; silicon; valence bands
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG