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Improvement of Homogeneity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching

  • The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays.

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Metadaten
Author:Robert Damian ŁawrowskiORCiD, Christian PrommesbergerORCiD, Christoph LangerORCiD, Florian Dams, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1155/2014/948708
ISSN:1687-8442
ISSN:1687-8434
Parent Title (English):Advances in Materials Science and Engineering. Special issue: Advances in Smart Materials and Applications
Publisher:Hindawi
Document Type:Article
Language:English
Year of first Publication:2014
Release Date:2022/12/09
Volume:2014
Article Number:Advances in Smart Materials and Applications
First Page:1
Last Page:6
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme
Licence (English):Creative Commons - CC BY - Namensnennung 3.0 International