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Photosensitivity of single silicon high-aspect-ratio tips with different doping levels

  • Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the lightly doped p-type HAR tips showed a characteristic current saturation at around 10-12 nA, whereas the HAR Si tips with p/n junction showed similar saturation phenomena, however, at much smaller current values starting at ~20-30 pA. Optical switching under a halogen lamp illumination resulted in at least 2-4 times higher saturation currents and showed a linear dependence between the illumination power and the FE current, for both types of structures. In case of the highly p-doped HAR tips optical current switching effects, i. e. current saturation, were observed at rather low current levels 1-2 pA. Intrinsic HAR Si-tips showed relative unstable field emission behavior without a clear evidence of the photosensitivity.

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Metadaten
Author:Pavel Serbun, V. Porshyn, Dirk Lützenkirchen-HechtORCiD, Christian PrommesbergerORCiD, Christoph LangerORCiD, Robert Damian ŁawrowskiORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2018.8520288
Parent Title (English):International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2018
Release Date:2021/05/27
Tag:Si p/n junction; field emission; p-type Si; photosensitivity
Pagenumber:1-2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik