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Field emission from surface textured GaN with buried double-heterostructures

  • In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV.

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Metadaten
Author:Robert Damian ŁawrowskiORCiD, Christoph LangerORCiD, Christian PrommesbergerORCiD, Rupert SchreinerORCiDGND, S. Mingels, V. Porshyn, Pavel Serbun, Günter Müller
DOI:https://doi.org/10.1109/IVNC.2015.7225548
Parent Title (English):2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2015
Release Date:2022/05/06
Tag:CATHODES; Current measurement; Electric fields; GaN; Gallium nitride; Iron; Light emitting diodes; Surface texture; field emission; photoemission
First Page:106
Last Page:107
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG