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Photo-enhanced field emission properties of p-doped black Si arrays

  • We have carried out systematic investigations of p-type black Si field emitter arrays under laser illumination. As expected the current-voltage characteristic revealed a strong saturation providing a high photosensitivity, which had a maximum on-off ratio of 43 at a maximum current of 13 μA. The saturation current was stable in the dark as well as under illumination with fluctuations <;0.7%. Results from time-resolved measurements of the photo-sensitivity showed a rather fast response but a long decay time. Electron spectra in the dark and under laser illumination revealed the origin of the emission.

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Metadaten
Author:S. Mingels, V. Porshyn, Pavel Serbun, Dirk Lützenkirchen-HechtORCiD, Günter Müller, Christian PrommesbergerORCiD, Christoph LangerORCiD, Rupert SchreinerORCiDGND, Dirk Lutzenkirchen-HechtORCiD
DOI:https://doi.org/10.1109/IVNC.2016.7551447
Parent Title (English):2016 29th International Vacuum Nanoelectronics Conference (IVNC), 11-15 July 2016, Vancouver, BC, Canada
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2016
Release Date:2022/05/26
Tag:Decision support systems; black Si; photo-enhanced field emission
First Page:1
Last Page:2
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG