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Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays

  • At the moment, only complicated techniques are known for the determination of array properties of field emitter arrays such as the number of active tips, the current distribution, or the individual tip radii. In this work, a method for extracting these parameters from integral measurement data is presented. A model describing the characteristics of a single emitter, including the saturation as a function of the applied voltage and the emitter radius, is developed. It is shown that experimental data of field emitter arrays can be represented as the sum of these functions and the characteristic parameters can be fitted to field emission data of an array. Using this method, the values of the radii as well as the parameters of distribution models can be determined directly. Analysis of experimental data from p-type Si emitter arrays shows that only 1–2% of the tips contribute significantly.

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Metadaten
Author:Janis Breuer, Michael BachmannORCiD, Felix Düsberg, Andreas Pahlke, Simon EdlerORCiD, Christoph LangerORCiD, Christian PrommesbergerORCiD, Robert Damian ŁawrowskiORCiD, Rupert SchreinerORCiDGND, Pavel Serbun, Dirk Lützenkirchen-HechtORCiD
DOI:https://doi.org/10.1116/1.5035189
Parent Title (English):Journal of Vacuum Science and Technology B
Publisher:AIP Publishing
Document Type:Article
Language:English
Year of first Publication:2018
Release Date:2021/05/06
Volume:36
Issue:5
Article Number:051805
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik