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Microrods and microlines by three-dimensional epitaxially grown GaN for field emission cathodes

  • The three-dimensional epitaxial technique allows the realization of gallium nitride lines in addition to the rods. To optimize the properties of GaN-based field emission cathodes further investigations and an improvement of the epitaxial process were performed. The microrods and microlines consist of a one-order higher n-doped gallium nitride in comparison to the gallium nitride layer on the sapphire substrate. The typical height of the microrods and -lines is about 5 μm. The field emission properties of these structures were investigated in diode configuration by integral field emission measurements at pressures below 10 -9 mbar. For the microrods (microlines) a voltage of 1100 V (2000 V) was measured for a field emission current of about 0.5 μA with an onset field of about 12 MV/m (24 MV/m). Furthermore, the field enhancement factors for microrods and -lines are in the range of 300 and 200, respectively.

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Metadaten
Author:Robert Damian ŁawrowskiORCiD, Christoph LangerORCiD, Christian PrommesbergerORCiD, Rupert SchreinerORCiDGND
DOI:https://doi.org/10.1109/IVNC.2017.8051576
Parent Title (English):International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2017
Release Date:2021/05/27
Tag:Epitaxial growth; GaN; Gallium nitride; LED; field emission
First Page:130
Last Page:131
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Produktion und Systeme