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Integrated silicon electron source for high vacuum microelectromechanical system devices

  • The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device.

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Metadaten
Author:Michał KrysztofORCiD, Paweł MieraORCiD, Paweł UrbańskiORCiD, Tomasz GrzebykORCiD, Matthias HausladenORCiD, Rupert SchreinerORCiD
DOI:https://doi.org/10.1116/6.0003385
ISSN:2166-2746
Parent Title (English):Journal of Vacuum Science & Technology B
Publisher:AIP Publishing
Document Type:Article
Language:English
Year of first Publication:2024
Release Date:2024/03/07
Tag:Electrical and Electronic Engineering; Electronic, Optical and Magnetic Materials; Instrumentation; Materials Chemistry; Process Chemistry and Technology; Surfaces, Coatings and Films
Volume:42
Issue:2
Article Number:023001
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG