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Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels

  • In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions.

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Metadaten
Author:Florian Herdl, Maximillian J. Kueddelsmann, Andreas Schels, Michael BachmannORCiD, Simon EdlerORCiD, Dominik Wohlfartsstätter, Felix Düsberg, Alexander Prugger, Michael Dillig, Florian Dams, Rupert SchreinerORCiDGND, Cormac Ó. Coileáin, Stefan Zimmermann, Andreas Pahlke, Georg S. Duesberg
DOI:https://doi.org/10.1109/IVNC57695.2023.10188974
ISBN:979-8-3503-0143-4
Parent Title (English):2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA
Publisher:IEEE
Document Type:conference proceeding (article)
Language:English
Year of first Publication:2023
Release Date:2023/10/17
Tag:durability; graphene compounds; ion mobility; semiconductor-insulator boundaries
First Page:14
Last Page:16
Institutes:Fakultät Angewandte Natur- und Kulturwissenschaften
Fakultät Angewandte Natur- und Kulturwissenschaften / Labor Mikrosensorik
Begutachtungsstatus:peer-reviewed
research focus:Sensorik
Licence (German):Keine Lizenz - Es gilt das deutsche Urheberrecht: § 53 UrhG