TY - GEN A1 - Melekhov, Evgeny A1 - Abb, Valerius A1 - Weidauer, Tobias A1 - Kammler, Martin A1 - Lechner, Alfred T1 - Tunable Nanopillars as Surface Enhanced Raman Scattering (SERS) Active Structure for Optical Quartz Glass Fiber T2 - SMSI 2021 - Sensors and Instrumentation N2 - In this work, a simple cost effective method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas on a tip of an optical quartz glass fiber is described. The structures are prepared using lithography-less dry etching. Gold nanoparticles are used as an etching mask using a thin metal-film thermal dewetting technique. The structures are applied as sensor for label-free analysis of organic substances in ppb range, such as drug residues in groundwater. The measurements are carried out by means of a Surface-enhanced Raman scattering (SERS) effect, an exchangeable sensor head, and a portable Raman device. This method allows in situ applications. Parathiocresol is used as a model substance to characterize the SERS cells. For metallization, gold and silver are compared. Reproducible SERS enhancement factors up to 10 7 are evaluated. Y1 - 2021 SN - 978-3-9819376-4-0 U6 - https://doi.org/10.5162/SMSI2021/B8.2 SP - 153 EP - 154 PB - AMA Association for Sensors and Measurement ER - TY - JOUR A1 - Chee, See Wee A1 - Kammler, Martin A1 - Graham, Jeremy A1 - Gignac, Lynne A1 - Reuter, Mark C. A1 - Hull, Robert A1 - Ross, Frances M. T1 - Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning JF - scientific reports N2 - We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates. KW - ARRAYS KW - AU KW - DAMAGE KW - GROWTH KW - IMPLANTATION KW - NUCLEATION KW - RECOVERY KW - silicon KW - TECHNOLOGY Y1 - 2018 U6 - https://doi.org/10.1038/s41598-018-27512-z VL - 8 SP - 1 EP - 10 PB - Nature ER - TY - JOUR A1 - Melekhov, Evgeny A1 - Penn, Tatjana A1 - Weidauer, Tobias A1 - Abb, Valerius A1 - Kammler, Martin A1 - Lechner, Alfred T1 - Tunable nanopillar array on a quartz-fiber tip for surface enhanced Raman scattering (SERS) detection JF - tm - Technisches Messen N2 - In this work, a simple two-step method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas directly on the tip of an optical quartz glass fiber is described. The structures are prepared by using dry etching of the fiber tip. For the etching process, gold nanoparticles fabricated by thermal dewetting technique were used as template. The structures are applied as sensors for label-free analysis of organic substances in ppb range, such as drug residues in liquid solutions. The measurements are carried out by a portable Raman device with an exchangeable sensor head utilizing the SERS-effect. This method allows in situ applications. In order to characterize the SERS cells, para-thiocresol and diclofenac sodium are used as model substances. For optimization of the substrate performance, different thicknesses of the dewetting-layer (6, 9, 12 nm), different etching times for formation of the pillars (6, 8, 10 and 12 min), and different thicknesses of SERS-metallization (25, 50, 75 nm) of gold and silver are compared. In order to show the applicability of the structure on the tip of a fiber, measurements from the upper side and from the underside of the substrate on quartz plates are compared. Reproducible SERS enhancement factors up to 10 7 {10^{7}} were achieved. N2 - In dieser Arbeit wird eine zweistufige Methode beschrieben, um einstellbare selbstorganisierte dreidimensionale SERS-aktive Nanostrukturen in Form von Nanosäulen auf der Spitze einer optischen Quarzglasfaser herzustellen. Die Strukturen werden durch trockenchemisches Ätzen der Faserspitze erzeugt. Für den Ätzprozess werden als Maske Goldnanopartikel verwendet, die mittels Thermal Dewetting hergestellt werden. Der Sensor wird für eine markierungsfreie Analyse von organischen Substanzen, wie bspw. Medikamentenrückstände in wässrigen Lösungen, im ppb-Bereich eingesetzt. Die Messungen werden mit einem tragbaren Raman-Gerät mit einem austauschbaren Sensorkopf durchgeführt. Um die SERS-Zellen zu charakterisieren, werden para-Thiocresol und Diclofenac-Natrium als Modellsubstanzen verwendet. Zur Optimierung der Substratleistung werden unterschiedliche Dicken der Dewettinglayer (6, 9, 12 nm), unterschiedliche Ätzzeiten der Nanosäulen (6, 8, 10 und 12 min) und unterschiedliche Schichtdicken der SERS-Metallisierung (25, 50, 75 nm) von Gold und Silber verglichen. Um die Anwendbarkeit der Struktur an der Spitze einer Faser zu zeigen, werden Messungen von der Oberseite und von der Rückseite des Substrats in Form eines Quarzglasplatten verglichen. Diese Struktur liefert einen reproduzierbaren Verstärkungsfaktor von bis zu 107. T2 - Einstellbare Nanosäulenanordnung auf der Spitze einer Quarzglasfaser für oberflächenverstärkte Raman-Spektroskopie (SERS) Y1 - 2022 U6 - https://doi.org/10.1515/teme-2021-0093 VL - 89 IS - 1 SP - 70 EP - 81 PB - de Gruyter ER - TY - JOUR A1 - Kammler, Martin A1 - Chidambarrao, D. A1 - Schwarz, K. W. A1 - Black, C. T. A1 - Ross, Frances M. T1 - Controlled nucleation of dislocations by a spatially localized stress field JF - Applied Physics Letters N2 - We analyze the nucleation of dislocations in silicon at spatially localized stress fields generated by silicon nitride pads having a high intrinsic stress. The nucleation and final configuration of the dislocations were studied using hot-stage transmission electron microscopy and were compared with dislocation simulations based on calculations of the stress fields around the pads. We find that the simulated configurations match well with the experimental data, and we show that the dislocation configuration can be controlled by the pad size. Y1 - 2005 U6 - https://doi.org/10.1063/1.2061862 VL - 87 IS - 13 PB - AIP ER - TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Transition in growth mode by competing strain relaxation mechanisms BT - surfactant mediated epitaxy of SiGe alloys on Si JF - Applied Physics Letters N2 - Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film. Y1 - 2004 U6 - https://doi.org/10.1063/1.1803914 VL - 85 IS - 15 SP - 3056 EP - 3058 PB - American Institute of Physics ER - TY - JOUR A1 - Chee, See Wee A1 - Kammler, Martin A1 - Balasubramanian, Prabhu A1 - Reuter, Mark C. A1 - Hull, Robert A1 - Ross, Frances M. T1 - Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au JF - Ultramicroscopy N2 - We use focused beams of Ga(+), Au(+) and Si(++) ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga(+) and Au(+), precipitates remain after recrystallization, while for Si(++), dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. KW - dislocation engineering KW - focused ion beam KW - In situ electron microscopy KW - solid phase epitaxial regrowth Y1 - 2013 U6 - https://doi.org/10.1016/j.ultramic.2012.07.004 VL - 127 SP - 126 EP - 131 PB - Elsevier ER - TY - JOUR A1 - Betz, Michael A. A1 - Büchele, Patric A1 - Brünnler, Manfred A1 - Deml, Sonja A1 - Lechner, Alfred T1 - Silicon micro venturi nozzles for cost-efficient spray coating of thin organic P3HT/PCBM layers JF - Journal of micromechanics and microengineering N2 - Improvements on spray coating are of particular interest to different fields of technology as it is a scalable deposition method and processing from solutions offer various application possibilities outside of typical facilities. When it comes to the deposition of expensive and film-forming media such as organic semiconductors, consumption and nozzle cleaning issues are of particular importance. We demonstrate the simple steps to design and fabricate micro venturi nozzles for economical spray coating with a consumption as low as 30-50 mu l.min(-1). For spray coating an active area of 25 cm(2) a 2.45-4.01 fold coating efficiency is observed compared to a conventional airbrush nozzle set. The electrical characterization of first diodes sprayed with an active layer thickness of similar to 750 nm using a single micronozzle at a coating speed of 1.7 cm(2).min(-1) reveals a good external quantum efficiency of 72.9% at 532 nm and a dark current of similar to 7.4.10(-5) mA.cm(-2), both measured at -2 V. Furthermore, the high resistance of the micronozzles against solvents and most acids is provided through realization in a silicon wafer with silicon dioxide encapsulation, therefore allowing easy and effective cleaning. KW - deep reactive ion etching KW - microfluidics KW - organic photodiodes KW - organic semiconductors KW - spray coating KW - venturi nozzles Y1 - 2017 U6 - https://doi.org/10.1088/0960-1317/27/1/015019 VL - 27 IS - 1 PB - IOP Publishing ER - TY - JOUR A1 - Liebherr, Raphaela B. A1 - Hutterer, Albert A1 - Mickert, Matthias J. A1 - Vogl, Franziska C. A1 - Beutner, Andrea A1 - Lechner, Alfred A1 - Hummel, Helmut A1 - Gorris, Hans H. T1 - Three-in-one enzyme assay based on single molecule detection in femtoliter arrays JF - Analytical and bioanalytical chemistry N2 - Large arrays of femtoliter-sized chambers are important tools for single molecule research as well as bioanalytical applications. We have optimized the design and fabrication of two array types consisting of 250 × 250 (62 500) femtoliter chambers either by surface etching of fused silica slides or by polydimethylsiloxane (PDMS) molding. Highly diluted solutions of β-galactosidase were enclosed in such arrays to monitor the fluorogenic reactions of hundreds of individual enzyme molecules in parallel by wide-field fluorescence microscopy. An efficient mechanical sealing procedure was developed to prevent diffusion of the fluorescent reaction product out of the chambers. Different approaches for minimizing non-specific surface adsorption were explored. The signal acquisition was optimized to grant both a large field of view and an efficient signal acquisition from each femtoliter chamber. The optimized femtoliter array has enabled a three-in-one enzyme assay system: First, the concentration of active enzyme can be determined in a digital way by counting fluorescent chambers in the array. Second, the activity of the enzyme bulk solution is given by averaging many individual substrate turnover rates without the need for knowing the exact enzyme concentration. Third-unlike conventional enzyme assays-the distribution of individual substrate turnover rates yields insight into the conformational heterogeneity in an enzyme population. The substrate turnover rates of single β-galactosidase molecules were found to be broadly distributed and independent of the type of femtoliter array. In general, both types of femtoliter arrays are highly sensitive platforms for enzyme analysis at the single molecule level and yield consistent results. KW - ARRAYS KW - Digital concentration readout KW - Enzyme kinetics KW - Fluorescence microscopy KW - Single molecule detection Y1 - 2015 U6 - https://doi.org/10.1007/s00216-015-8910-0 VL - 407 IS - 24 SP - 7443 EP - 7452 PB - Springer ER - TY - JOUR A1 - Peter, Daniel A1 - Dalmer, Michael A1 - Lechner, Alfred A1 - Gigler, Alexander M. A1 - Stark, Robert W. A1 - Bensch, Wolfgang T1 - Measurement of the mechanical stability of semiconductor line structures in drying liquids with application to pattern collapse JF - Journal of Micromechanics and Microengineering N2 - Enhanced particle removal processes in wet cleaning as well as drying processes of semiconductor wafers can cause significant lateral forces on surface structures. These forces, however, must not exceed the mechanical stability of structures on the wafer. Thus, a mechanical fracture test was used to assess the lateral mechanical stability of polysilicon line structures in relevant process liquids. The mechanical test was based on nanomanipulation with an atomic force microscope. Compared to fracture tests in air, data acquired in liquid isopropanol revealed a stabilizing effect. The differences in fracture forces can be attributed to a stress corrosion process on the surface. The size of the generated damage was influenced by the viscosity of the surrounding media. Y1 - 2011 U6 - https://doi.org/10.1088/0960-1317/21/2/025001 VL - 21 IS - 2 PB - IOP Science ER - TY - JOUR A1 - Wall, Simone A1 - Krenzer, Boris A1 - Wippermann, Stefan A1 - Sanna, Simone A1 - Klasing, Friedrich A1 - Hanisch-Blicharski, Anja A1 - Kammler, Martin A1 - Schmidt, Wolf Gero A1 - Horn-von Hoegen, Michael T1 - Atomistic picture of charge density wave formation at surfaces JF - Physical review letters N2 - We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s. Y1 - 2012 U6 - https://doi.org/10.1103/PhysRevLett.109.186101 VL - 109 IS - 18 PB - APS ER - TY - JOUR A1 - Al-Falou, A. A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Strain state analysis of hetero-epitaxial systems JF - Europhysics Letters N2 - We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process. Y1 - 2005 U6 - https://doi.org/10.1209/epl/i2004-10399-6 VL - 69 IS - 4 SP - 570 EP - 576 PB - IOP ER - TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Low energy electron diffraction of epitaxial growth of bismuth on Si(111) JF - Surface Science N2 - The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. KW - Bismuth KW - Epitaxial growth KW - LEED KW - low energy electron diffraction KW - Silicon KW - Structural transition Y1 - 2005 U6 - https://doi.org/10.1016/j.susc.2004.11.033 VL - 576 IS - 1-3 SP - 56 EP - 60 PB - Elsevier ER - TY - JOUR A1 - Schmidt, Thomas A1 - Kröger, Roland A1 - Flege, Jan Ingo A1 - Horn-von Hoegen, Michael A1 - Clausen, T. A1 - Falta, J. A1 - Janzen, Andreas A1 - Zahl, P. A1 - Kury, P. A1 - Kammler, Martin T1 - Less strain energy despite fewer misfit dislocations: the impact of ordering JF - Physical review letters N2 - The average strain state of Ge films grown on Si(111) by surfactant mediated epitaxy has been compared to the ordering of the interfacial misfit dislocation network. Surprisingly, a smaller degree of average lattice relaxation was found in films grown at higher temperature. On the other hand, these films exhibit a better ordered dislocation network. This effect energetically compensates the higher strain at higher growth temperature, leading to the conclusion that, apart from the formation of misfit dislocations, their ordering represents an important channel for lattice-strain energy relaxation. Y1 - 2006 U6 - https://doi.org/10.1103/PhysRevLett.96.066101 VL - 96 IS - 6 PB - APS ER -