TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Transition in growth mode by competing strain relaxation mechanisms BT - surfactant mediated epitaxy of SiGe alloys on Si JF - Applied Physics Letters N2 - Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film. Y1 - 2004 U6 - https://doi.org/10.1063/1.1803914 VL - 85 IS - 15 SP - 3056 EP - 3058 PB - American Institute of Physics ER -