TY - GEN A1 - Chavez Vega, Jhohan Harvey A1 - Böhm, Valter A1 - Scharff, Moritz A1 - Prem, Nina A1 - Monkman, Gareth J. A1 - Becker, Tatiana I. A1 - Günther, L. A1 - Alencastre, Jorge H. A1 - Grieseler, R. A1 - Zimmermann, Klaus T1 - Magneto-active elastomer as viscoelastic foundation material for artificial tactile sensors with tuneable properties T2 - Book of Abstracts of the 16th German Ferrofluid Workshop, Braunschweig, 18.-20.07.2018 Y1 - 2018 SP - 16 EP - 17 ER - TY - JOUR A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Wohlfartsstätter, Dominik A1 - Edler, Simon A1 - Bachmann, Michael A1 - Pahlke, Andreas A1 - Schreiner, Rupert A1 - Hansch, Walter T1 - Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays JF - Micromachines N2 - Field emitter arrays (FEAs) are a promising component for novel vacuum micro- and nanoelectronic devices, such as microwave power amplifiers or fast-switching X-ray sources. However, the interrelated mechanisms responsible for FEA degradation and failure are not fully understood. Therefore, we present a measurement method for quantitative observation of individual emission sites during integral operation using a low-cost, commercially available CMOS imaging sensor. The emission and degradation behavior of three differently doped FEAs is investigated in current-regulated operation. The measurements reveal that the limited current of the p-doped emitters leads to an activation of up to 55% of the individual tips in the array, while the activation of the n-type FEA stopped at around 30%. This enhanced activation results in a more continuous and uniform current distribution for the p-type FEA. An analysis of the individual emitter characteristics before and after a constant current measurement provides novel perspectives on degradation behavior. A burn-in process that trims the emitting tips to an integral current-specific ideal field enhancement factor is observed. In this process, blunt tips are sharpened while sharp tips are dulled, resulting in homogenization within the FEA. The methodology is described in detail, making it easily adaptable for other groups to apply in the further development of promising FEAs. Y1 - 2023 U6 - https://doi.org/10.3390/mi14112008 VL - 14 IS - 11 PB - MDPI ER - TY - CHAP A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Edler, Simon A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Buchner, Philipp A1 - Schreiner, Rupert A1 - Hansch, Walter T1 - Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500. KW - field emission KW - field emission imaging KW - field emission distribution KW - field enhancement factor KW - CMOS imaging KW - beta factor Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188957 SP - 224 EP - 226 PB - IEEE ER - TY - CHAP A1 - Herdl, Florian A1 - Kueddelsmann, Maximillian J. A1 - Schels, Andreas A1 - Bachmann, Michael A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Düsberg, Felix A1 - Prugger, Alexander A1 - Dillig, Michael A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Coileáin, Cormac Ó. A1 - Zimmermann, Stefan A1 - Pahlke, Andreas A1 - Duesberg, Georg S. T1 - Characterization and Operation of Graphene-Oxide-Semiconductor Emitters at Atmospheric Pressure Levels T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - In recent years Graphene-Oxide-Semiconductor (GOS) electron emitters have attracted a lot of interest due to their outstanding durability in modest vacuum conditions. However, the performance at ambient pressure remains largely unexplored. In this study GOS-emitters are characterized in nitrogen and air at atmospheric pressure, and compared with their vacuum characteristics. For this purpose, lifetime and IV-characteristics measurements are shown. Furthermore, the GOS-emitter was operated as an ionization source for ion mobility spectrometry (IMS) at ambient conditions. KW - durability KW - graphene compounds KW - ion mobility KW - semiconductor-insulator boundaries Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188974 SP - 14 EP - 16 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schels, Andreas A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation. KW - Apertures KW - Field Emission KW - Field Emission Array KW - Ions KW - Laser-Micromachining KW - Lasers KW - Micromechanical devices KW - Silicon KW - Silicon Field Emission Array KW - Steady-state KW - Vacuum systems Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10189001 SP - 115 EP - 116 PB - IEEE ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Herdl, Florian A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission. KW - Semiconductor device measurement KW - Stimulated emission KW - Optical device fabrication KW - Glass KW - Power system stability KW - Insulators KW - Electron optics Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188878 SP - 6 EP - 8 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Improved Method for Determining the Distribution of FEA Currents by Optical CMOS Sensors T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - CMOS image sensors are utilized to determine the time- and spatially-resolved distribution of the electron emission of silicon field emission arrays. During initial experiments, rather low field emission currents already visibly damaged the sensor surface, altering the system accuracy over the measurement time. Therefore, we coated the sensor surface with copper for protection. In contrast to the original insulating surface, the Cu coating provides a conductive surface for incident electrons and improves heat dissipation in addition. This prevents localized surface charges and surface damages which stabilize the system accuracy. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652543 SP - 1 EP - 2 PB - IEEE ER - TY - JOUR A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - The “LED‐version” of the electron gun: An electron source for operation in ambient pressure environments based on silicon field emitter arrays JF - Vakuum in Forschung und Praxis N2 - We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments. Y1 - 2023 U6 - https://doi.org/10.1002/vipr.202300801 VL - 35 IS - 3 SP - 32 EP - 37 PB - Wiley ER - TY - THES A1 - Zhong, Gantong T1 - Calibration and Performance Evaluation of Contactless Optical Position Sensors Based on 3D Printed Optical Waveguides N2 - This work presents the design, implementation, and performance evaluation of a positionsensing system based on a 3D printed optical waveguide. Building upon the conceptual foundation of D-shaped polymer optical fiber (POF) sensors [1], this study introduces a novel waveguide structure fabricated via multi-material fused filament fabrication (FFF) 3D printing. The waveguide incorporates a square-core geometry with integrated mechanical brackets and selective black cladding layer to enhance optical confinement and minimize boundary-induced nonlinearity. Three successive design iterations were developed and evaluated, with each version refined based on calibration results and structural observations. The final version demonstrated high fabrication stability and improved optical behavior, enabling consistent calibration across multiple samples. Using a center-corrected linear attenuation model, the position of a side-coupled LED was estimated from dual photodiode signals and compared with true light source position. The measurement results for five independently printed waveguides show mean absolute errors below 0.2 mm and standard deviations as low as 0.268 mm. The sensor response was found to be highly linear over the 5–55 mm sensing range, with worst-case errors bounded within ±1.7 mm. Compared with traditional D-shaped POF sensors, where performance is limited by manual polishing variability and nonuniform attenuation, the 3D-printed approach offers superior linearity, submillimeter accuracy, and batch-to-batch reproducibility. These findings prove the feasibility of 3D-printed optical waveguides in scalable and precise position sensing applications, marking a further step toward the batch fabrication and and potential industrialization of contactless optical position sensors. A conclusion of the research findings and suggestions for future improvements were provided at the end of this thesis, offering insights for the further development in this area. Y1 - 2025 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-84668 CY - Regensburg ER - TY - JOUR A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Measurement of field emission array current distributions by metal-coated CMOS image sensors JF - Journal of Vacuum Science & Technology B N2 - A CMOS image sensor is utilized to determine the time- and spatially resolved distribution of the total electron emission current of a silicon field emission array. The sensor measures electron emission without the need for phosphorus screens or scintillators as converters. However, in initial experiments, rather low field emission currents of several hundreds of nanoamperes per emitter already damaged the sensor surface, which altered the systems’ signal response over the measurement time. In consequence, we coated the CMOS sensor surface with a Cu layer for surface protection. In contrast to the original insulating surface, Cu is an excellent current- and heat-conductor, which avoids lens charging by providing a conductive path for incident electrons and has an improved heat dissipation capability. Measurements using a segmented field emission cathode with four individually addressable tips demonstrate a consistent correlation between the emission current and the sensor signal of the metal-coated image sensor. Furthermore, the characterization of a field emission array showed that single tip emission currents of up to 12 μA per tip are measurable without discernible damage effects of the sensor’s surface. KW - Bremsstrahlung KW - Laser micromachining KW - Image sensors KW - Field emitter arrays Y1 - 2024 U6 - https://doi.org/10.1116/6.0004074 VL - 42 IS - 6 PB - AIP Publishing ER - TY - JOUR A1 - Schreiner, Rupert A1 - Wiedmann, J. A1 - Coenning, W. A1 - Porsche, J. A1 - Gentner, Jean-Louis A1 - Berroth, Manfred A1 - Scholz, Ferdinand A1 - Schweizer, H. T1 - Fabrication approach for antiphase narrow linewidth complex coupled 1.55 μm DFB lasers JF - Electronics Letters N2 - A new method for fabricating narrow linewidth antiphase complex coupled MQW DFB lasers by periodically etching the active layer and quartemary InGaAsP overgrowth is reported. The minimum linewidth for a 375 µm long ridge waveguide laser is only 250 kHz at an optical output power of 4 mW. KW - etching KW - optical fabrication KW - quantum well lasers KW - ridge waveguides KW - distributed feedback lasers Y1 - 1999 U6 - https://doi.org/10.1049/el:19990132 SN - 0013-5194 VL - 35 IS - 2 SP - 146 EP - 148 PB - The Institution of Engineering and Technology IET ER - TY - JOUR A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Asgharzade, Ali A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Wohlfartsstätter, Dominik A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Investigation of Influencing Factors on the Measurement Signal of a CMOS Image Sensor for Measuring Field Emission Currents JF - Sensors Y1 - 2025 U6 - https://doi.org/10.3390/s25051529 N1 - Corresponding author der OTH Regensburg: Matthias Hausladen VL - 25 IS - 5 PB - MDPI ER - TY - GEN A1 - Eiler, Julian A1 - Weber, Stefan A1 - Gerlesberger, Peter A1 - Plöchinger, Heinz A1 - Schreiner, Rupert T1 - Miniaturized Pirani vacuum sensor with active heat-loss compensation T2 - Verhandlungen der Deutschen Physikalischen Gesellschaft e.V. (DPG), Regensburg, 16. - 21. März 2025 N2 - Pirani sensors measure the thermal conductivity of the residual gas in a vacuum by creating a thermal gradient between a heated sensor element and a heat sink. The heat flux from the sensor element to the heat sink over the residual gas is a measure of the vacuum and can be determined by the electrical power applied. In addition to the heat flux over the gas, there are further energy losses from the heating structure due to radiation and parasitic heat fluxes via the suspensions of the sensor element. These losses reduce the sensitivity of the sensor. For this reason, a Micro-Pirani sensor in the shape of a microhotplate was developed that actively compensates the heat flux via the suspensions. This was achieved by placing additional heating structures on the suspensions, which interrupt the heat flow from the sensor element via the suspensions during operation. This active compensation improves the sensitivity at low pressures, enabling vacuum measurements from atmospheric pressure down to 10e-6 mbar. Y1 - 2025 UR - https://www.dpg-verhandlungen.de/year/2025/conference/regensburg/part/o/session/66/contribution/7 SN - 2751-0522 PB - Deutsche Physikalische Gesellschaft e.V. ER - TY - THES A1 - Jonker, Dirk T1 - Advanced nanofabrication techniques for electron emission devices N2 - The goal of this thesis is to develop an electron injection source based on a cold field emission cathode that ultimately functions as an alternative electron source used during the Birch reduction process. The experimental configuration to conduct an alternative Birch reduction involves the combination of various physical domains, including solid-state physics, physics of interfaces, electrochemistry, and fluid dynamics. The body of this thesis discusses the fabrication and characterization of a silicon nanocone array. It also presents a self-aligned method to incorporate an electronic gate structure that may function as an extractor grid. The emission behavior and transport properties of the silicon nanocones are assessed by scanning tunneling microscopy by performing measurements on flat silicon and silicon nanocone surfaces containing different dopant types and doping concentrations. Furthermore, additional experimental work is conducted to replace a thermally grown silicon dioxide layer with platinum silicide and characterize the electrical properties by means of scanning tunneling microscopy. Lastly, the thesis discusses the fabrication of two plasmonic structures and evaluates the plasmonic modes, surface enhancement, and Raman activity. KW - Nanofabrication KW - Scanning tunneling microscopy (STM) KW - Geometric diode KW - surface enhanced Raman scattering KW - silicon nanowires KW - silicon nanocones KW - platinum silicide (PtSi) KW - Plasmonic substrates Y1 - 2023 UR - https://research.utwente.nl/en/publications/advanced-nanofabrication-techniques-for-electron-emission-devices SN - 978-90-365-5632-3 U6 - https://doi.org/10.3990/1.9789036556323 ER - TY - THES A1 - Weigl, Stefan T1 - Development of a sensor system for human breath acetone analysis based on photoacoustic spectroscopy N2 - The breath analysis section of this thesis outlines the potentials but also emphasises the concomitant challenges of human breath analysis. The section further describes the usefulness of a point-of-care (POC) device for breath acetone detection. In addition, it covers various breath analysis related subjects, which can be useful considering further developments of breath analysers. This includes an extensive summary involving the high abundant endogenous as well as the exogenous breath species present in a clinical environment. Subsequently, a detailed discussion about the theoretical aspects of absorption spectra is provided, forming the basis for the spectral interference chapter. Classical absorption spectroscopy (AS) is compared with photoacoustic spectroscopy (PAS) in view of trace gas analysis. Different modulation schemes for signal generation, i.e. amplitude modulation (AM) and wavelength modulation (WM) are part of the comparison, while the advantages and disadvantages of each technique are highlighted. As a result, PAS is considered superior to AS and hence is selected as the method of choice regarding the development of a sensor for breath acetone detection. A detailed mathematical derivation of the photoacoustic signal generation as well as the signal enhancement by means of acoustic resonance amplification is provided. Moreover, several phenomena causing signal attenuation are outlined, including vibrational-translational (VT) relaxation, vibrational-vibrational (VV) energy transfer mechanism, acoustic detuning and photodissociation. Various simulations regarding spectral interferences in the infra-red (IR) and ultraviolet (UV) region are presented, demonstrating the susceptibility towards spectral cross-sensitivities in the IR region, hence, rather suggesting the UV region for acetone detection. However, this simulation can be easily adopted to other target analytes and serves as a basis for multicomponent analysis approaches in the IR region using tuneable light sources. Ultra sensitive acetone detection employing a high power UV LED is presented and a detailed analysis considering the effects of environmental parameters onto the photoacoustic signal, including temperature, pressure, LED duty cycle and flow rate, is provided. In addition, general cross-sensitivities of the photoacoustic signal towards the high abundant species O2, CO2 and H2O have been investigated and discussed. Moreover, several LED and photoacoustic cell (PAC) combinations have been compared in order to evaluate improvement approaches regarding an enhancement of the system’s sensitivity. Finally, photoacoustic sensor setups employing an interband cascade laser (ICL) or a quantum cascade laser (QCL) have been studied and compared to various UV setups in view of different key performance parameters, including the limits of detection (LOD) and the normalised noise equivalent absorption (NNEA) coefficients. The juxtaposition of the different approaches once more emphasises the extraordinary sensitivity of photoacoustic spectroscopy. To the best of the author’s knowledge, the LODs (3σ) of the UV LED based photoacoustic measurement in typical breath conditions (12.5 ppbV) and the LOD of the QCL measurement (0.79 ppbV) provide two world records. First, regarding photoacoustic acetone detection using an UV LED and second, in view of other published results for photoacoustic acetone detection in general. N2 - Zu Beginn der Arbeit werden zum einen die Potentiale der Analyse des menschlichen Ausatemgases aufgezeigt und zum anderen die damit verbundenen Herausforderungen beschrieben. Dabei wird auch die Nützlichkeit eines Point-of-Care (POC) Gerätes zur Bestimmung des Acetongehalts im Ausatemgas hervorgehoben. Darüber hinaus werden verschiedene mit der Atemgasanalyse zusammenhängende Themen behandelt, die hinsichtlich weiterer Entwicklungen von Atemgasanalysegeräten sehr hilfreich sein können. Dazu gehört u.a. eine ausführliche Analyse der Zusammensetzung des menschlichen Ausatemgases, die sowohl die hauptsächlichen endogenen als auch die im klinischen Umfeld verstärkt vorkommenden, exogenen Bestandteile, aufgelistet. Anschließend werden die theoretischen Grundlagen von Absorptionsspektren detailliert behandelt, da sie die Grundlage für das Kapitel über die spektralen Interferenzen bilden. Des Weiteren werden die klassische Absorptionsspektroskopie (AS), als auch die photoakustische Spektroskopie (PAS), hinsichtlich ihrer Eignung für die Spurengasanalytik verglichen. Verschiedene Modulationsschemata für die Signalerzeugung, d.h. Amplitudenmodulation (AM) und Wellenlängenmodulation (WM), sind Teil des Vergleichs, wobei die Vor- und Nachteile jeder Technik hervorgehoben werden. Als Ergebnis wurde die PAS gegenüber der AS als überlegen angesehen und daher als Methode der Wahl bei der Entwicklung eines Sensors zur Bestimmung des Acetongehalts in der Ausatemluft ausgewählt. Eine detaillierte mathematische Herleitung der photoakustischen Signalerzeugung sowie der Signalverstärkung mittels akustischer Resonanzverstärkung ist ebenso in der Arbeit enthalten. Darüber hinaus werden mehrere Phänomene der Signaldämpfung skizziert, dazu zählen u.a. die Schwingungs-Translation Relaxation, der Schwinungs-Schwingungs Energieübertragungsmechanismus, die Photodissoziation und die akustische Resonanzverschiebung. Es werden verschiedene Simulationen bezüglich spektraler Interferenzen im infraroten (IR) und ultraviolleten (UV) Wellenlängenbereich vorgestellt, die die Anfälligkeit gegenüber spektralen Querempfindlichkeiten im IR-Bereich demonstrieren und somit eher den UV-Bereich für die Acetonbestimmung nahelegen. Die Simulationsergebnisse können leicht auf weitere Zielanalyten übertragen werden und dienen somit als Grundlage für Multikomponenten-Analyseansätze im IR-Bereich mittels durchstimmbarer Lichtquellen. Im Ergebnisteil wird u.a. ein hochempfindliches System zur Acetondetektion unter Verwendung einer Hochleistungs-UV LED vorgestellt. Dieses System wurde außerdem einer detaillierten Analyse unter Berücksichtigung der Auswirkungen von Umgebungsparametern auf das photoakustische Signal, einschließlich Temperatur, Druck, LED-Tastverhältnis und Durchfl ussrate, unterzogen. Zusätzlich wurden Querempfi ndlichkeiten des photoakustischen Systems gegenüber den im Ausatemgas hochkonzentrierten Stoffen O2, CO2 und H2O untersucht und die Ergebnisse diskutiert. Darüber hinaus wurden verschiedene Kombinationen von LEDs und photoakustischen Zellen verglichen, um Verbesserungsansätze hinsichtlich der Empfindlichkeit des Systems zu untersuchen. Abschließend wurden photoakustische Sensorsysteme, die einen Interbandkaskadenlaser (ICL) oder einen Quantenkaskadenlaser (QCL) verwenden, untersucht und mit verschiedenen UV LED Systemen im Hinblick auf unterschiedliche Leistungsparameter, einschließlich der Nachweisgrenzen (NWG) und den normierten, rauschäquivalenten Absorptionskoeffizienten, verglichen. Die Gegenüberstellung der verschiedenen Ansätze unterstreicht einmal mehr die außerordentliche Empfindlichkeit der photoakustischen Spektroskopie. Nach bestem Wissen des Autors stellen die NWGs (3σ) der photoakustischen Messung mit einer UV LED in typischer Atemgaszusammensetzung (12.5 ppbV) und die NWG der QCL-Messungen (0.79 ppbV) zwei Weltrekorde dar. Zum einen gibt es keine Veröffentlichung hinsichtlich einer besseren, photoakustisch ermittelten NWG für Aceton mittels einer UV LED und zum anderen stellt die mit dem QCL photoakustisch gemessene NWG im Allgemeinen die beste, je veröffentlichte photoakustische NWG für Aceton dar. KW - Photoacoustic KW - Breath Analysis KW - Acetone Y1 - 2021 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:355-epub-447768 ER - TY - JOUR A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - High current field emission from Si nanowires on pillar structures JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics N2 - We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%. KW - Doping KW - Electron sources KW - Nanowires KW - Plasma processing KW - Field emitter arrays KW - Triodes KW - Semiconductors Y1 - 2024 U6 - https://doi.org/10.1116/6.0003384 SN - 2166-2754 VL - 42 IS - 2 PB - AIP ER -