TY - PAT A1 - Olbrich, Florian A1 - Pongratz, Christian A1 - Bierl, Rudolf A1 - Ehrlich, Ingo T1 - Method and System for Evaluating a Structural Integrity of an Aerial Vehicle T2 - Europäisches Patentblatt (09.12.2020) zur Anmeldung: OTH Regensburg, Anmeldenummer: 19179054.2, Patentnummer 1001/3748327, Veröffentlichungsnummer: 3 748 327 Y1 - 2020 SP - 395 EP - 396 ER - TY - JOUR A1 - Ławrowski, Robert Damian A1 - Pirker, Luka A1 - Kaneko, Keita A1 - Kokubo, Hiroki A1 - Bachmann, Michael A1 - Ikuno, Takashi A1 - Remskar, Maja A1 - Schreiner, Rupert T1 - Field emission from nanotubes and flakes of transition metal dichalcogenides JF - Journal of Vacuum Science and Technology B N2 - Transition metal dichalcogenides such as MoS2 and WS2 are low-dimensional semiconductor materials. MoS2 and WS2 nanotubes and flakes were grown by a chemical transport reaction under a temperature gradient. I2 was used as a transport agent for previously synthesized MoS2 and WS2, respectively. These multilayered nanotubes are indirect bandgap semiconductors with a bandgap depending on their diameter. WS2 flakes were prepared by the sulfurization of thin WOx flakes. To increase the field enhancement of such low-dimensional structures by a higher aspect ratio, two approaches were examined: (a) the MoS2 and WS2 nanotubes were attached individually by a focused ion beam with Pt on dry etched n-type Si pillars and (b) the WS2 flakes were grown directly on the surface of the (n-type and p-type) Si pillars. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10−9 mbar. At a voltage of 900 V (18 MV/m), the integral emission current from the nanotubes is up to 11 μA for the lateral mounted MoS2 and about 1.3 μA (1.0 μA) for the upright mounted WS2 (MoS2). The onset voltage for a current of 1 nA is about 550 V for MoS2 and 500 V for WS2, respectively. The voltage conversion factor is in the range of 6 × 104–8 × 104 cm−1 for the nanotubes. The mounted MoS2 flakes show a field emission current of about 6 μA at 18 MV/m in contrast to the directly grown WS2 flakes, which show a pronounced saturation regime and, therefore, a lower emission current of about 0.5 μA is reached at 1500 V (25 MV/m). The WS2 flakes show a two times higher (1 × 105 cm−1) voltage conversion factor in comparison to the MoS2 flakes (5 × 104 cm−1). The extracted characteristics of the current-limiting part show a difference in the behavior of the extracted current-limiting characteristics between the lateral (linear) and upright mounted (exponential) nanotubes and the MoS2 flakes. In contrast, the WS2 flakes show charge carrier depletion effects. Y1 - 2020 U6 - https://doi.org/10.1116/1.5140474 VL - 38 IS - 3 SP - 032801 PB - AIP Publishing ER - TY - JOUR A1 - Kleshch, Victor I. A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Orekhov, Anton A1 - Ivanov, Victor E. A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Obraztsov, Alexander N. T1 - A Comparative Study of Field Emission from Pristine, Ion-treated and Tungsten Nanoparticle-decorated p-type Silicon Tips JF - Physica Status Solidi B N2 - The field electron emission characteristics of individual tips of a silicon field emitter array are analyzed. The array of conical‐shaped tips is fabricated on a p‐type silicon wafer by using reactive ion etching and sharpening oxidation. The tips are decorated with single tungsten nanoparticles at their apexes. Furthermore, the focused ion beam is also used to increase surface conductivity of some of the tips. Comparative measurements of field emission are performed by using the scanning anode probe field emission microscopy technique. All types of tips demonstrated emission activation consisting of a sudden current increase at a certain value of the applied voltage. Compared to the pristine tips, a noticeable reduction of the saturation effect in the current–voltage characteristics and a smaller light sensitivity for the decorated tips is found. For ion‐treated tips, saturation effects and light sensitivity are completely suppressed. Scanning electron microscopy observations reveal the formation of single nanoscale protrusions extending from the metal particles and from the apexes of bare ion‐treated tips after exposure under strong electric fields during the field emission measurements. The influence of protrusions growth on characteristics of silicon field emitter arrays is discussed. Y1 - 2019 U6 - https://doi.org/10.1002/pssb.201800646 VL - 256 IS - 9 PB - Wiley ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Müller, Günter A1 - Lützenkirchen-Hecht, Dirk A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission behavior of single n- and p-type black Si pillar structures T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - We have investigated the properties of single n- and p-type black silicon (b-Si) pillars with a height of 20 μ m under strong electric field and halogen lamp or laser illumination. For both type of b-Si pillar structures, I-V measurements revealed strong activation effects, which consisted in sudden current increases during the first up/down voltage sweeps. The maximum reproducible emission current from a single n-type b-Si pillar structure was about 15 μ A. A pronounced saturation region at 240 nA was observed for a single p-type b-Si pillar. The current fluctuation over time showed a standard deviation of 28% and 2.5% for n- and p-type single b-Si pillar structures, respectively. Optical switching under halogen lamp illumination resulted in at least 3 times higher saturation currents and showed a linear dependence of the FE current on the laser power. KW - field emission KW - black silicon KW - photoemission Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520292 PB - IEEE ER - TY - JOUR A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Photosensitivity of p-type black Si field emitter arrays JF - Journal of Applied Physics N2 - We have investigated the properties of black Si field emitter arrays under strong electric fields and laser illumination. A low onset field of 1.8 MV/m for an emission current of 1 nA was obtained. A pronounced saturation region of the dark and photo-enhanced current was observed, which provided a short-term stability of 0.1% at 0.4 μA and 0.7% at 1.0 μA, respectively. As maximum value for the photosensitivity, an on-off current switching ratio of 43 reaching about 13 μA was achieved at a laser power of 15 mW. Electron spectra in the dark and under laser illumination are presented, showing a current and light-sensitive voltage drop across the emitters as well as hints for hot electron emission. Y1 - 2016 U6 - https://doi.org/10.1063/1.4948328 VL - 119 IS - 16 ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Müller, Günter A1 - Mingels, Stephan A1 - Lützenkirchen-Hecht, Dirk A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Dams, Florian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission behavior of Au-tip-coated p-type Si pillar structures T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - Precisely aligned high-aspect-ratio (HAR) silicon tip arrays were fabricated using enhanced reactive ion etching with an inductively-coupled-plasma followed by a sharpening oxidation. A gold thin film was then sputtered only on the tips of the HAR structures. Field-emission (FE) properties from Au-coated HAR p-Si tip array cathodes have been systematically investigated by means of field emission scanning microscopy (FESM). A rather high efficiency of the HAR Si structures (71% at 550 V), but limited homogeneous FE with currents of 1-600 nA might be correlated with the varying geometry of the tips and the presence of oxides. I-V measurements of single Au-coated HAR emitters revealed activation effects and the saturation current region at 3 nA. An increase of the saturation current by 4 orders of magnitude was observed during 20 hours of conditioning at constant voltage, which finally resulted in nearly reproducible FN curves with a ß-factor of 473. An excellent stability of the emission current of less than 1 % was obtained during the additional long-time conditioning at constant voltage. Optical switching under halogen lamp illumination resulted in at least 2 times higher saturation currents and showed a linear dependence of the FE current on the light color temperature. KW - field emission KW - p-type Si-pillar array KW - surface oxide effects KW - photoemission Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551516 SN - 2380-6311 SP - 181 EP - 182 PB - IEEE ER - TY - CHAP A1 - Serbun, Pavel A1 - Porshyn, Vitali A1 - Lützenkirchen-Hecht, Dirk A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Photosensitivity of single silicon high-aspect-ratio tips with different doping levels T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - Photosensitivity of single lightly p-doped, highly p-doped, with an integrated p/n junction and intrinsic high-aspect-ratio (HAR) silicon tips was investigated in an ultra-high vacuum environment. The current-voltage characteristics (I-V) of the lightly doped p-type HAR tips showed a characteristic current saturation at around 10-12 nA, whereas the HAR Si tips with p/n junction showed similar saturation phenomena, however, at much smaller current values starting at ~20-30 pA. Optical switching under a halogen lamp illumination resulted in at least 2-4 times higher saturation currents and showed a linear dependence between the illumination power and the FE current, for both types of structures. In case of the highly p-doped HAR tips optical current switching effects, i. e. current saturation, were observed at rather low current levels 1-2 pA. Intrinsic HAR Si-tips showed relative unstable field emission behavior without a clear evidence of the photosensitivity. KW - field emission KW - Si p/n junction KW - p-type Si KW - photosensitivity Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520288 PB - IEEE ER - TY - CHAP A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Bachmann, Michael A1 - Düsberg, F. A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Serbun, Pavel A1 - Mingels, Stephan A1 - Müller, Günter T1 - Semiconductor field emission electron sources using a modular system concept for application in sensors and x-ray-sources T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Semiconductor field emitters are suitable candidates for applications, which require a very stable field emission (FE) current and a high emission uniformity over the entire emission area. By using different materials and geometries, we are able to vary the FE characteristics within a wide range. Each specific application requires its own optimized design for the cathode as well as for the other parts of the FE electron source. To meet as many of these requirements as possible while using only a limited number of different prefabricated components, we established a modular system concept for our FE electron source. This allows the implementation of almost every cathode material. For first characterizations, we used gated p-type Si cathodes with 16 tips. We obtained stable FE currents of 0.4 μA for a grid-potential of 400 V and a gate potential of 100 V. Almost 100% of the electrons are emitted towards the grid-electrode. Parasitic leakage paths, as well as the electron emission towards the gate-electrode can be neglected. Approximately 10% of the electrons are transmitted through the grid and reach the external anode. This is in good agreement with the optical transmission through the grid-mesh. KW - Anodes KW - CATHODES KW - electron sources KW - GEOMETRY KW - Iron KW - Logic gates KW - semiconductor field emission KW - silicon Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225572 SP - 178 EP - 179 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Serbun, Pavel A1 - Müller, Günter T1 - Field emission from surface textured GaN with buried double-heterostructures T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - In this contribution we report on field emission (FE) cathodes based on thin-film LED-technology and surface texturing. The FE cathode can be used both as an n-GaN cathode with an electrical contact at the top side metallization as well as a pn-GaN diode contacting only the p-GaN layer at the bottom side of the structure. The local and integral FE properties of the textured surface of the LED structure were investigated. For n-GaN an integral emission current up to 1.0 μA at an electric field of 19 V/μm was achieved. The pn-GaN diode measurements showed an integral current saturation behavior with two orders of magnitude lower FE currents. Regulated voltage scans obtained by FE scanning microscopy revealed a well-distributed emission over the whole cathode area. Measurements under pulsed tunable laser illumination and moderate electric fields indicated charge carrier generation in the buried double-heterostructures at photon energies below 3.5 eV besides normal photoemission above 4.1 eV. KW - CATHODES KW - Current measurement KW - Electric fields KW - field emission KW - Gallium nitride KW - GaN KW - Iron KW - Light emitting diodes KW - photoemission KW - Surface texture Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225548 SP - 106 EP - 107 PB - IEEE ER - TY - CHAP A1 - Bresinsky, Markus A1 - Reusner, Florian T1 - GLOBE – Learn and Innovate Digitization by a Virtual Collaboration Exercise and Living Lab T2 - Interactivity, Game Creation, Design, Learning, and Innovation. 6th International Conference, ArtsIT 2017, and Second International Conference, DLI 2017, Heraklion, Crete, Greece, October 30–31, 2017, Proceedings N2 - This paper presents an advanced interactive learning platform .dot that implements the GLOBE exercise, using innovative information and communication technologies to enhance learning and development of management and leadership skills in a complex organizational setting. GLOBE on the one hand focuses on competences around ICT and virtual collaboration, and on the other hand on digital transformation, technologies and tools at higher education institutions. By this applied science, learning and developing on the real-world platform, analysis and drive of digital innovation and transformation can be fostered. The main goal is to co-create knowledge and solutions in the following focused subjects: Management and leadership of multidisciplinary, multinational and multicultural virtual and real collaboration in a complex organizational environment. GLOBE uses real world scenarios (e.g. United Nations mission) and involves real world actors. This comprehensive educational approach should enhance learning techniques and leverage learning progress with hands-on experiences and applied science in the context of ICT and virtual collaboration, and the embodied dynamics of behavior to support innovation and development. KW - Digitization KW - Experiential learning KW - Human factors KW - ICT KW - Interactive and collaborative learning KW - Living Lab KW - Open innovation KW - Problem-based learning KW - Virtual collaboration Y1 - 2018 U6 - https://doi.org/10.1007/978-3-319-76908-0_26 SP - 273 EP - 281 PB - Springer Nature ER - TY - CHAP A1 - Mingels, Stephan A1 - Porshyn, Vitali A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lutzenkirchen-Hecht, Dirk T1 - Photo-enhanced field emission properties of p-doped black Si arrays T2 - 2016 29th International Vacuum Nanoelectronics Conference (IVNC), 11-15 July 2016, Vancouver, BC, Canada N2 - We have carried out systematic investigations of p-type black Si field emitter arrays under laser illumination. As expected the current-voltage characteristic revealed a strong saturation providing a high photosensitivity, which had a maximum on-off ratio of 43 at a maximum current of 13 μA. The saturation current was stable in the dark as well as under illumination with fluctuations <;0.7%. Results from time-resolved measurements of the photo-sensitivity showed a rather fast response but a long decay time. Electron spectra in the dark and under laser illumination revealed the origin of the emission. KW - black Si KW - Decision support systems KW - photo-enhanced field emission Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551447 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Hausler, Peter A1 - Fischer, Johannes A1 - Wunderlich, Lukas A1 - Recum, Patrick A1 - Peller, Sebastian A1 - Hirsch, Thomas A1 - Bierl, Rudolf T1 - Miniaturisierte Sensoren basierend auf Oberflächenplasmonenresonanz, Chancen und Herausforderungen T2 - DGaO-Proceedings 2021 N2 - Derzeit gibt es zahlreiche Bereiche, wie Umwelt Monitoring und zivile Infrastruktur in denen geeignete Sensoren für die Überwachung der Systeme fehlen. SPR-basierte Sensoren haben das Potential diese Lücke zu schließen. Um für den Einsatz in der Umwelt tauglich zu werden, müssen die Sensoren noch robuster werden. Hier wird eine mögliche Lösung gezeigt. Y1 - 2021 UR - https://www.dgao-proceedings.de/download/122/122_a21.pdf PB - Dt. Gesellschaft für angewandte Optik CY - Erlangen-Nürnberg ER - TY - RPRT A1 - Höller, Christoph A1 - Quirt, David A1 - Mahn, Jeffrey A1 - Müller-Trapet, Markus T1 - Guide to calculating airborne sound transmission in buildings N2 - In recent years, the science and engineering for controlling sound transmission in buildings have shifted from a focus on individual assemblies such as walls or floors, to a focus on performance of the complete system. Standardized procedures for calculating the overall transmission, combined with standardized measurements to characterize sub-assemblies, provide much better prediction of sound transmission between adjacent indoor spaces. The International Standards Organization (ISO) has published a calculation method, ISO 15712-1 that uses laboratory test data for sub-assemblies such as walls and floors as inputs for a detailed procedure to calculate the expected sound transmission between adjacent rooms in a building. This standard works very well for some types of construction, but to use it in a North American context one must overcome two obstacles – incompatibility with the ASTM standards used by our construction industry, and low accuracy of its predictions for lightweight wood or steel frame construction. To bypass limitations of ISO 15712-1, this Guide explains how to merge ASTM and ISO test data in the ISO calculation procedure, and provides recommendations for applying extended measurement and calculation procedures for specific common types of construction. This Guide was developed in a project established by the National Research Council of Canada to support the transition of construction industry practice to using apparent sound transmission class (ASTC) for sound control objectives in the National Building Code of Canada (NBCC). However, the potential range of application goes beyond the minimum requirements of the NBCC – the Guide also facilitates design to provide enhanced sound insulation, and should be generally applicable to construction in both Canada and the USA. This publication contains a limited set of examples for several types of construction, to provide an introduction and overview of the ASTC calculation procedure. Additional examples and measurement data can be found in the companion documents to this Guide, namely NRC Research Reports RR-333 to RR-337. Furthermore, the calculation procedure outlined and illustrated in this Guide is also used by the software web application soundPATHS, which is available for free on the website of the National Research Council of Canada (see the references in Section 7 of this Guide for access details). Au cours des dernières années, les scientifiques et les ingénieurs ont fait porter leurs efforts en matière d’atténuation de la transmission du son dans les bâtiments davantage sur le rendement du système dans sa totalité que sur les ensembles de construction individuels. Les méthodes normalisées de calcul de la transmission globale, combinées à des mesures normalisées de caractérisation des sous-ensembles, permettent de mieux prédire la transmission du son entre des espaces intérieurs adjacents. L’Organisation internationale de normalisation (ISO) a publié une méthode de calcul, la norme ISO 15712-1, qui utilise des données d’essai en laboratoire pour les sous-ensembles, comme les murs et les planchers, comme données d’entrée en vue d’une méthode détaillée de calcul de la transmission du son prévue entre des pièces adjacentes dans un bâtiment. Cette norme fonctionne très bien pour certains types de construction, mais pour l’utiliser dans un contexte nord-américain, il faut surmonter deux obstacles – l’incompatibilité avec les normes ASTM utilisées par notre industrie de la construction et la faible exactitude de ses prévisions pour la construction à ossature de bois ou d’acier légère. Pour contourner les limites de la norme ISO 15712-1, le présent guide explique comment fusionner les données d’essai de l’ISO et de l’ASTM dans la méthode de calcul de l’ISO, et formule des recommandations relativement à l’application de méthodes élargies de mesure et de calcul pour des types de construction courants. Le présent guide a été élaboré dans le cadre d’un projet mis sur pied par le Conseil national de recherches du Canada afin d’appuyer la transition de la pratique de l’industrie de la construction vers l’utilisation d’un indice de transmission du son apparent (ITSA) satisfaisant aux objectifs de réduction rigoureux du Code national du bâtiment du Canada (CNBC). Toutefois, l’éventail potentiel d’applications va au-delà des exigences minimales du CNBC – le Guide facilite aussi une conception visant à améliorer l’insonorisation et devrait s’appliquer de façon générale à la construction tant au Canada qu’aux États-Unis. La présente publication contient un ensemble limité d’exemples pour plusieurs types de construction, afin de fournir une introduction et un aperçu de la méthode de calcul de l’ITSA. On trouvera d’autres exemples et données de mesure dans les documents d’accompagnement du présent guide, à savoir, les rapports de recherche RR-333 à RR-337 du CNRC. De plus, la méthode de calcul décrite et illustrée dans le présent guide est également utilisée par l’application Web soundPATHS, disponible gratuitement sur le site Web du Conseil national de recherches du Canada (voir les références à la section 7 du présent guide pour les détails d’accès). KW - airborne sound KW - apparent sound transmission class KW - ASTC KW - building KW - building acoustics KW - CLT KW - concrete KW - cross-laminated timber KW - Delta STC KW - flanking KW - hybrid KW - impact noise KW - ISO 12354 KW - ISO 15712 KW - Kij KW - linings KW - masonry KW - National Building Code Canada KW - NBCC KW - precast KW - sound KW - sound transmission KW - sound transmission class KW - STC KW - steel-framed KW - structure-borne sound KW - timber KW - transmission KW - wood-framed KW - ΔSTC KW - ΔTL Y1 - 2019 U6 - https://doi.org/10.4224/40001814 PB - National Research Council of Canada. Construction ET - 5th edition ER - TY - CHAP A1 - Shymanovich, Uladzimir A1 - Nicoul, Matthieu A1 - Lu, Wei A1 - Tarasevitch, A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Sokolowski-Tinten, Klaus A1 - Phipps, Claude T1 - Coherent acoustic and optical phonons in laser-excited solids studied by ultrafast time-resolved X-ray diffraction T2 - AIP Conference Proceedings N2 - We apply ultrafast time‐resolved X‐ray diffraction to directly study coherent acoustic and optical phonons in laser‐excited materials. In Au the ps acoustic response has been investigated with the particular goal to clarify the interplay of electronic and thermal pressure contributions. In Bi the extreme softening of the coherently excited A 1 g optical phonon presents strong indication that upon intense laser‐excitation the Peierls‐transition which determines the equilibrium structure of Bi can be reversed. In FeRh we studied the lattice response after a fast laser‐induced anti‐ferromagnetic to ferromagnetic phase transition. Y1 - 2010 U6 - https://doi.org/10.1063/1.3507146 IS - 1 SP - 558 EP - 566 PB - AIP ER - TY - JOUR A1 - Payer, Thomas A1 - Klein, C. A1 - Acet, M. A1 - Ney, V. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael T1 - High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing JF - Thin Solid Films N2 - Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%. KW - Epitaxy KW - Strain KW - Annealing KW - Bismuth KW - Silicon Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2012.06.004 VL - 520 IS - 23 SP - 6905 EP - 6908 PB - Elsevier ER - TY - RPRT A1 - Höller, Christoph A1 - Quirt, David A1 - Mueller-Trapet, Markus T1 - Apparent sound insulation in wood-framed buildings N2 - This Report presents the results from substantial experimental studies of sound transmission, together with an explanation of calculation procedures to predict the sound transmission between adjacent spaces in a building with wood-framed walls and floors. This Report presents two types of experimental data for wood-framed constructions: - Test data for direct sound transmission through typical wood-framed wall assemblies and wood-framed floor assemblies, plus a summary of trends for such constructions and references to compilations of additional data - Test data for flanking sound transmission measured following the procedures of ISO 10848 for coupled wall/floor junctions and wall/wall junctions Worked examples for calculating the apparent sound transmission class (ASTC) rating between adjacent dwelling units are presented to illustrate how the experimental data can be applied. Y1 - 2017 U6 - https://doi.org/10.4224/23002820 PB - National Research Council of Canada. Construction ER - TY - CHAP A1 - Zhou, Ping A1 - Streubühr, C. A1 - Kalus, Annika A1 - Frigge, Tim A1 - Wall, S. A1 - Hanisch-Blicharski, Anja A1 - Kammler, Martin A1 - Ligges, Manuel A1 - Bovensiepen, U. A1 - von der Linde, D. A1 - Horn-von Hoegen, Michael T1 - Ultrafast time resolved reflection high energy electron diffraction with tilted pump pulse fronts T2 - EPJ Web of Conferences - XVIIIth International Conference on Ultrafast Phenomena N2 - We present time-resolved RHEED from a laser excited Pb(111) surface using a pulse front tilter for the compensation of the velocity mismatch of electrons and light. The laser pulses with tilted fronts were characterized by a spatially resolving cross correlator. The response of the surface upon excitation was observed to be less than 2 ps. Y1 - 2013 U6 - https://doi.org/10.1051/epjconf/20134110016 VL - 41 PB - EPJ ER - TY - CHAP A1 - Lu, Wei A1 - Nicoul, Matthieu A1 - Shymanovich, Uladzimir A1 - Tarasevitch, A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Sokolowski-Tinten, Klaus T1 - Transient reversal of a Peierls-transition: Extreme phonon softening in laser-excited Bismuth T2 - International Conference on Ultrafast Phenomena, Snowmass N2 - Laser-excited coherent optical phonons in Bismuth were investigated using time-resolved X-ray diffraction. The observed extreme softening of the excited A1g-mode presents strong indication that the Peierls-distortion defining the equilibrium structure of Bismuth is transiently reversed. Y1 - 2010 U6 - https://doi.org/10.1364/UP.2010.ME41 IS - ME41 PB - Optica Publishing Group ER - TY - JOUR A1 - Portavoce, A. A1 - Kammler, Martin A1 - Hull, Robert A1 - Reuter, Mark C. A1 - Copel, M. A1 - Ross, Frances M. T1 - Growth of nanostructures by locally modified surface reactivity JF - Materials Science in Semiconductor Processing N2 - The chemical vapor deposition (CVD) of Si and Ge on Si(0 0 1) substrates covered by 1 monolayer of Ga has been studied. Ga modifies surface reactivity and surface atom mobility. We show that islanding occurs during Ga-mediated CVD even in the absence of strain, allowing for the formation of islands without a wetting layer or with a thinner wetting layer. The morphology of the grown layer is highly dependent on kinetic parameters, i.e. growth temperature and growth pressure, that control Si and Ge deposition and Ga desorption. Si Ga-mediated CVD promotes the formation of self-assembled epitaxial Si islands exhibiting {1 1 3} facets. Ge islands grown by Ga-mediated CVD present reduced lateral sizes and an increased surface density compared to non Ga-mediated CVD. The growth morphology (particularly island size and density) can be understood by considering a qualitative model in which atoms are deposited only on sites whose dangling bonds are not passivated by Ga. We suggest that modification of surface reactivity during surfactant-mediated CVD can thus provide a new degree of freedom for quantum dot fabrication. KW - UHV TEM KW - UHV CVD KW - Epitaxial growth KW - Si KW - Ge KW - Surfactant Ga Y1 - 2009 U6 - https://doi.org/10.1016/j.mssp.2009.07.001 VL - 12 IS - 1-2 SP - 25 EP - 30 PB - Elsevier ER - TY - JOUR A1 - Portavoce, A. A1 - Kammler, Martin A1 - Hull, Robert A1 - Reuter, Mark C. A1 - Ross, Frances M. T1 - Mechanism of the nanoscale localization of Ge quantum dot nucleation on focused ion beam templated Si(001) surfaces JF - Nanotechnology N2 - We investigate the fundamental mechanism by which self-assembled Ge islands can be nucleated at specific sites on Si(001) using ultra-low-dose focused ion beam (FIB) pre-patterning. Island nucleation is controlled by a nanotopography that forms after the implantation of Ga ions during subsequent thermal annealing of the substrate. This nanotopography evolves during the annealing stage, changing from a nanoscale annular depression associated with each focused ion beam spot to a nanoscale pit, and eventually disappearing (planarizing). The correspondence of Ge quantum dot nucleation sites to the focused ion beam features requires a growth surface upon which the nanotopography is preserved. A further key observation is that the Ge wetting layer thickness is reduced in patterned regions, allowing the formation of islands on the templated regions without nucleation elsewhere. These results provide routes to the greatly enhanced design and control of quantum dot distributions and dimensions. Y1 - 2006 U6 - https://doi.org/10.1088/0957-4484/17/17/028 VL - 17 IS - 17 SP - 4451 EP - 4455 PB - IOP ER - TY - JOUR A1 - Ross, Frances M. A1 - Kammler, Martin A1 - Reuter, Mark C. A1 - Hull, Robert T1 - In-situ observations of self-assembled island nucleation on patterned substrates JF - Philosophical Magazine N2 - We compare in-situ electron microscopy observations of Ge island growth on Si surfaces modulated by different techniques. Si(001) substrates were patterned either using a focused Ga ion beam or lithographically to produce similar feature sizes. In the case of the focused-ion-beam patterned substrates, chemical or strain effects caused by low Ga doses control the positions at which islands nucleate. Nucleation on topographically modulated substrates, with the pattern produced either by high-dose sputtering or lithographically, is controlled by the nature of the side walls of topographic features. The two patterning approaches have different benefits in creating arrays of islands for device applications. Y1 - 2004 U6 - https://doi.org/10.1080/14786430410001671430 VL - 84 IS - 25-26 SP - 2687 EP - 2702 PB - Taylor & Francis ER - TY - JOUR A1 - Menzel, Andreas A1 - Conrad, E. H. A1 - Tringides, Michael C. A1 - Kammler, Martin A1 - Horn- von Hoegen, Michael T1 - Finite collection time effects in autocovariance function measurements JF - Journal of Applied Physics N2 - In this paper we discuss how finite data sets influence experimental measurements of the autocovariance function. Autocovariance estimators are biased, meaning that the expectation value for any measured autocovariance function is not identical to the actual autocovariance function. In this work we show that the measured autocovariance function for a finite length time series must become negative for some lag times. We derive analytic corrections to these finite time errors for different types of correlated random sequences. Our results explain the apparent anticorrelated noise observed in experimental observations. Y1 - 2003 U6 - https://doi.org/10.1063/1.1537466 VL - 93 IS - 4 SP - 2229 EP - 2235 PB - AIP Publishing ER -