TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Sellmair, J. T1 - Nano Emitters on Silicon Pillar Structures generated by a Focused Electron Beam Induced Deposition T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - Nano emitters were deposited by focused electron beam induced deposition of Trimethyl-(methylcyclopentadienyl)platinum(IV) on top of silicon pillars. The nano emitters were exactly positioned in the center on the top of up to four pillars of a quadratic arranged array of sixteen pillars with a pitch of 50 μm. Integral field emission measurements were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The Fowler-Nordheim plots show a linear behavior, like expected for an n-type silicon material and a metal needle. The I-V measurement of the most promising sample shows an integral emission current up to 2 μm at a voltage of 600 V (12 MV/m) and an onset voltage for a current of 1 nA of about 300 V. KW - field emission KW - nano emitter KW - focused electron beam induced deposition KW - MeCpPtMe3 Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520059 PB - IEEE ER -