TY - CHAP A1 - Hausladen, Matthias A1 - Bomke, Vitali A1 - Buchner, Philipp A1 - Bachmann, Michael A1 - Knapek, Alexandr A1 - Schreiner, Rupert T1 - Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 % (spiral) respectively ±5.7 % (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed. KW - aperture field KW - emission grid KW - Fabrication KW - laser micromachining KW - parastichy tip arrangements KW - silicon field emission KW - Stability analysis KW - Spirals KW - Field emitter array KW - Voltage measurement Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600717 SN - 2380-6311 PB - IEEE CY - Piscataway, N.J. ER - TY - CHAP A1 - Buchner, Philipp A1 - Bomke, Vitali A1 - Hausladen, Matthias A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips. Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600756 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Allaham, Mohammad M. A1 - Buchner, Philipp A1 - Schreiner, Rupert A1 - Knápek, Alexandr T1 - Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France N2 - Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters. KW - characterization parameter KW - Current-voltage characteristics KW - electron emission KW - electron source KW - Limiting KW - Micromachining KW - Murphy-Good plot KW - n-type Si chip KW - RESISTANCE KW - safety KW - silicon Y1 - 2021 U6 - https://doi.org/10.1109/IVNC52431.2021.9600690 SP - 1 EP - 2 PB - IEEE ER - TY - GEN A1 - Schreiner, Rupert T1 - Miniaturized sensor and actuator elements based on the heat transport in gases or the ionization of gas particles T2 - 16th International Conference on Optical and Electronic Sensors, COE'2020, 29 March - 2 April 2020, Krakow, Poland (online) Y1 - 2021 ER - TY - JOUR A1 - Lindner, Matthias A1 - Pipa, Andrei V. A1 - Karpen, Norbert A1 - Hink, Rüdiger A1 - Berndt, Dominik A1 - Foest, Rüdiger A1 - Bonaccurso, Elmar A1 - Weichwald, Robert A1 - Friedberger, Alois A1 - Caspari, Ralf A1 - Brandenburg, Ronny A1 - Schreiner, Rupert T1 - Icing Mitigation by MEMS-Fabricated Surface Dielectric Barrier Discharge JF - Applied Sciences N2 - Avoiding ice accumulation on aerodynamic components is of enormous importance to flight safety. Novel approaches utilizing surface dielectric barrier discharges (SDBDs) are expected to be more efficient and effective than conventional solutions for preventing ice accretion on aerodynamic components. In this work, the realization of SDBDs based on thin-film substrates by means of micro-electro-mechanical-systems (MEMS) technology is presented. The anti-icing performance of the MEMS SDBDs is presented and compared to SDBDs manufactured by printed circuit board (PCB) technology. It was observed that the 35 mu m thick electrodes of the PCB SDBDs favor surface icing with an initial accumulation of supercooled water droplets at the electrode impact edges. This effect was not observed for 0.3 mu m thick MEMS-fabricated electrodes indicating a clear advantage for MEMS-technology SDBDs for anti-icing applications. Titanium was identified as the most suitable material for MEMS electrodes. In addition, an optimization of the MEMS-SDBDs with respect to the dielectric materials as well as SDBD design is discussed. KW - aerospace engineering KW - anti-icing KW - DBD PLASMA ACTUATORS KW - EXCITATION KW - FLOW-CONTROL KW - low-temperature plasma KW - MEMS KW - SEPARATION CONTROL KW - SDBD Y1 - 2021 U6 - https://doi.org/10.3390/app112311106 N1 - Corresponding author: Matthias Lindner VL - 11 IS - 23 SP - 1 EP - 17 PB - MDPI CY - Basel ER - TY - JOUR A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - Silicon Field Emission Electron Source With Individually Controllable Single Emitters JF - IEEE Transactions on Electron Devices N2 - An electron source with an array of individually controllable single tips allows the observation of each emitter current simultaneously as well as the measurement of the integral current. Furthermore, the initial activation process of the individual tips and current distribution of the source can be examined. The Si cathode consists of an array of 2 x 2 conically shaped emitter structures on a borosilicate glass substrate. The emitters were fabricated by laser micromachining and wet etching. Integral field emission (FE) measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10(-9) mbar with a self-aligned Si extraction grid, due to adjustment pins. The total emission current was regulated to a predefined value (4.0, 10, 20, 40, and 50 mu A) by an external regulating circuit and recorded individually during the measurement. The onset voltage for a current of 1 nA varied between 320 and 430 V. The voltage conversion factor is in the range of 7.6 x 10(4) cm(-1) to 1.3 x 10(5) cm(-1). Constant currentmeasurementsover a longer periodof time (1800 values with a sample rate of 0.5 Hz) were performed and show a total current fluctuation less than 0.6% due to the regulation circuit. Despite the stable total current in regulated operation, it was observed that the individual emitters fluctuate up to 75% for low (similar to 10(-8) A) and 5% for high (similar to 10(-5) A) currents. KW - Current distribution KW - current limiters KW - electron emission KW - electron sources KW - silicon-on-insulator Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3093374 VL - 68 IS - 8 SP - 4116 EP - 4122 PB - IEEE ER - TY - JOUR A1 - Remskar, Maja A1 - Hüttel, Andreas K. A1 - Shubina, Tatiana V. A1 - Seabaugh, Alan A1 - Fathipour, Sara A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Confinement Related Phenomena in MoS2 Tubular Structures Grown from Vapour Phase JF - Israel Journal of Chemistry N2 - We review recently discovered phenomena observed in the MoS2 tubular structures, which were synthesized by a lasting chemical transport reaction nearly at chemical equilibrium. Such MoS2 nanotubes are distinguished by low density of structural defects, thin walls and a high aspect ratio, which intrinsically provide a confined, edge-free geometry. Quantum confinement with single electron conductance was recorded and a bright exciton photoluminescence with appearance of whispering gallery modes was observed. In addition, the field-effect transistors and field emitters based on single MoS2 nanotubes were demonstrated. These discoveries revitalize research of MoS2 curved structures grown from vapour phase, which were reported several decades ago. Y1 - 2021 U6 - https://doi.org/10.1002/ijch.202100100 SN - 1869-5868 VL - 62 IS - 3-4 SP - 1 EP - 11 PB - Wiley ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Field Emission Arrays from Graphite Fabricated by Laser Micromachining T2 - 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - Arrays of 4x4 conical shaped emitters were directly structured by laser micromaching. Assembled as an electron source with a spacer and Si-grid, they were investigated by means of IV-measurement in ultra-high vacuum. The IV-measurements of the sample show integral emission currents up to 10 µA at a voltage of 1000 V (11 MV/m). Initially, an ideal FN-behaviour is noticeable. The deviation for higher voltage values in the FN-plot is caused by the change of the work function, which was proven by numerical calculations. KW - field emission array KW - graphite KW - laser micromachining Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600736 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Herdl, Florian A1 - Bachmann, Michael A1 - Wohlfartsstätter, Dominik A1 - Düsberg, Felix A1 - Dudeck, Markus A1 - Eder, Magdalena A1 - Meyer, Manuel A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Schels, Andreas A1 - Hansch, Walter A1 - Schreiner, Rupert A1 - Wohlfartsstatter, Dominik A1 - Dusberg, Felix T1 - A novel current dependent field emission performance test T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France N2 - A current dependent performance test for comparison of different field emitter arrays is introduced. Statistical analysis is enabled due to a short measurement time and as a main feature the electric field shift, comparable to the degradation of the emitter is examined. Significance of the test method is shown by a comparison of field emitter arrays with different doping levels. KW - Current measurement KW - Field emitter arrays KW - Statistical analysis KW - Systematics KW - Time measurement KW - Tools KW - Vacuum systems Y1 - 2021 U6 - https://doi.org/10.1109/IVNC52431.2021.9600695 SP - 1 EP - 2 ER - TY - CHAP A1 - Schels, Andreas A1 - Edler, Simon A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Herdl, Florian A1 - Dusberg, F. A1 - Eder, Magdalena A1 - Meyer, Manuel A1 - Dudek, M. A1 - Pahlke, Andreas A1 - Schreiner, Rupert ED - Purcell, Stephen ED - Mazellier, Jean-Paul T1 - Current dependent performance test used on different types of silicon field emitter arrays T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France N2 - A current dependent performance test is used to investigate the influence of doping and emitter geometry on the lifetime of silicon field emitter arrays. The measurements reveal an improved performance for lower n-type dopant concentrations. Furthermore, two new types of field emitters are introduced by slightly varying the original fabrication process [1]. The comparison shows superiority of tip like emitters over blade like structures. Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600787 SP - 1 EP - 2 PB - IEEE CY - Piscataway, NJ ER -