TY - CHAP A1 - Schreiner, Rupert A1 - Grabeldinger, H. A1 - Wiedmann, J. A1 - Wunstel, K. A1 - Porsche, J. A1 - Scholz, Ferdinand A1 - Schweizer, H. T1 - Complex coupled 1.55 mu m tunable super-grating DFB lasers and photonic filters T2 - Compound semiconductors 1999 : proceedings of the Twenty-Sixth International Symposium on Compound Semiconductors held in Berlin, Germany, 22 - 26 August 1999 N2 - We report on the investigation and realization of photonic filters based on the combination of fractional compositions of a few basic grating periods. Using a minimum set of two basic periods Lambda(1) and Lambda(2) we demonstrate comb-like few mode photonic band gap structures with arbitrary numbers of bands and frequency spacing between the bands. Optically integrated filters of different comb periods result in switchable wavelength filters for channel selection in WDM applications. Y1 - 2000 UR - https://www.researchgate.net/publication/296464112_Complex_coupled_155_mu_m_tunable_super-grating_DFB_lasers_and_photonic_filters SN - 0-7503-0704-8 PB - Inst. of Physics Publ. CY - Bristol [u.a.] ER - TY - CHAP A1 - Schreiner, Rupert A1 - Schweizer, Heinz C. T1 - High frequency operation of 1.57 μm laterally gain coupled DFB lasers with self aligned ohmic contacts and nickel surface gratings T2 - IEEE 18th International Semiconductor Laser Conference; 29 Sept.-3 Oct. 2002, Garmisch, Germany N2 - Laterally coupled DFB lasers with self-aligned ohmic contacts show the advantage of a, considerably simplified fabrication process. Side-mode-suppresion-ratios up to 55 dB and 3 dB-bandwidths beyond 15 GHz were obtained for these devices. KW - Frequency KW - Optical coupling KW - Distributed feedback devices KW - Etching KW - Laser theory KW - Laser modes KW - Nickel KW - Laser feedback KW - Waveguide lasers KW - Laser noise Y1 - 2002 SN - 0-7803-7598-X U6 - https://doi.org/10.1109/ISLC.2002.1041099 SP - 21 EP - 22 PB - IEEE ER - TY - CHAP A1 - Podstránský, Jáchym A1 - Hausladen, Matthias A1 - Zlámal, Jakub A1 - Knápek, Alexandr A1 - Schreiner, Rupert T1 - Single Column Multiple Electron Beam Imaging from N-Type Silicon T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - This work is aimed at measuring the electron emission from multiple cathodes formed by n-doped silicon and imaging the electron beams focused by an einzel lens on a CMOS camera. The experimental results are compared with computer simulation to understand the electron emission from the semiconductor cathode and the observed imaging imperfections. Finally, modifications to the experimental setup are suggested that should lead to improvement in the extraction current and spot size of focused electron beams and also better understanding of the processes taking place in the experiment. Y1 - 2024 SN - 979-8-3503-7976-1 U6 - https://doi.org/10.1109/IVNC63480.2024.10652470 SP - 1 EP - 2 PB - IEEE ER - TY - JOUR A1 - Schmidt, Oliver G. A1 - Denker, Ullrich A1 - Dashiell, Michael W. A1 - Jin-Phillipp, Neng Yun A1 - Eberl, Karl A1 - Schreiner, Rupert A1 - Gräbeldinger, Hedwig A1 - Schweizer, Heinz C. A1 - Christiansen, Silke H. A1 - Ernst, Frank T1 - Laterally aligned Ge/Si islands: a new concept for faster field-effect transistors JF - Materials Science and Engineering B N2 - Self-assembled and coherently strained Ge dots were grown on a Si/SiGe superlattice, which was deposited on a flat Si(001) substrate surface patterned with a regular array of straight trenches. The superlattice translates the surface modulation of the substrate into a strain-field modulation, which causes the Ge dots on its surface to form along straight lines above the buried trenches. This approach provides self-assembled Ge dots with excellent lateral periodicity, which might be useful for fabricating dot-based field-effect-transistors (DotFETs). Here, we propose the concept of a modulation-doped p-channel DotFET (p-MOD-DotFET). The p-MOD-DotFET relies on embedded Ge-rich nanostructures, which provide p-channels through the Ge-rich dots. A high Ge concentration in the dots is desirable in order to exploit the high hole mobility of Ge-rich material. We show that the commonly observed Si–Ge intermixing during Si capping of Ge dots can be suppressed by overgrowing the islands at low temperature. KW - Field-effect transistor KW - Self-assembly islands KW - CMOS KW - MOSFET KW - MOFDET alignment KW - Modulation Y1 - 2002 U6 - https://doi.org/10.1016/S0921-5107(01)00810-8 SN - 1873-4944 SN - 0921-5107 VL - 89 IS - 1-3 SP - 101 EP - 105 PB - Elsevier CY - New York, NY ER - TY - CHAP A1 - Eiler, Julian A1 - Högl, Christina A1 - Lindner, Matthias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Miniaturized Surface Dielectric Barrier Discharge Plasma Actuators for Application in Chemical Analysis Systems T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - A new concept for a miniaturized planar ion source based on a surface dielectric barrier discharge (SDBD) is presented. A fabrication method based on a stamping process is described, and the plasma actuators are characterized based on their power in dependence of the applied voltage. The voltage for plasma ignition is approx. 1 kV with a maximum plasma power of 40 W/m at 3,4 kV. KW - Actuators KW - Discharges (electric) KW - Ion sources KW - Low Temperature Plasma KW - Plasma KW - Plasma Actuator KW - Plasmas KW - Surface Dielectric Barrier Discharge KW - Surface discharges KW - Vacuum systems KW - Voltage Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188884 SP - 40 EP - 42 PB - IEEE ER - TY - CHAP A1 - Bartl, Mathias A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Asgharzadehkhorasani, Ali A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Simulations and Investigations of Silicon Nanowire Field Emitters T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - The emission behavior of field emission electron sources consisting of a silicon nanowire cathode, an extraction grid electrode and a planar anode was investigated based on a particle tracing simulation using FEM. The focus was on the influence of the grid geometry as well as the positioning of the grid relative to the emitters on the electron transmission. The highest transmission can be achieved with the emitter tips protruding 10 µm trough the extraction grid openings. The transmission decreases more rapidly with increasing distance between the tip and the grid the thicker the grid is. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652355 SP - 1 EP - 2 PB - IEEE ER - TY - JOUR A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Integrated multichip field emission electron source fabricated by laser-micromachining and MEMS technology JF - Journal of Vacuum Science & Technology B N2 - In this work, high-current field emission electron source chips were fabricated using laser-micromachining and MEMS technology. The resulting chips were combined with commercially available printed circuit boards (PCBs) to obtain a multichip electron source. By controlling the separate electron sources using an external current control circuit, we were able to divide the desired total current evenly across the individual chips deployed in the PCB-carrier. In consequence, we were able to show a decreased degradation due to the reduced current load per chip. First, a single electron source chip was measured without current regulation. A steady-state emission current of 1 mA with a high stability of ±1.3% at an extraction voltage of 250 V was observed. At this current level, a mean degradation slope of −0.7 μA/min with a nearly perfect transmission ratio of 99% ± 0.4% was determined. The measurements of a fully assembled multichip PCB-carrier electron source, using a current control circuit for regulation, showed that an even distribution of the desired total current led to a decreased degradation. This was determined by the increase in the required extraction voltage over time. For this purpose, two current levels were applied to the electron source chips of the PCB-carrier using an external current control circuit. First, 300 μA total current was evenly distributed among the individual electron source chips followed by the emission of 300 μA per electron source chip. This allows the observation of the influence of a distributed and nondistributed total current, carried by the electron source chips. Thereby, we obtained an increase in the mean degradation slope from +0.011 V/min (300 μA distributed) to +0.239 V/min (300 μA per chip), which is approximately 21 times higher. Moreover, our current control circuit improved the current stability to under 0.1% for both current levels, 300 μA distributed and 300 μA per chip. KW - MEMS technology KW - Field emitter arrays KW - Electron sources KW - Laser micromachining Y1 - 2024 U6 - https://doi.org/10.1116/6.0003233 VL - 42 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Remškar, Maja A1 - Jelenc, Janez A1 - Czepurnyi, Nikolai A1 - Malok, Matjaž A1 - Pirker, Luka A1 - Schreiner, Rupert A1 - Hüttel, Andreas K. T1 - Modulations of the work function and morphology of a single MoS2 nanotube by charge injection JF - Nanoscale Advances N2 - Both the miniaturization of transistor components and the ongoing investigation of material systems with potential for quantum information processing have significantly increased current interest of researchers in semiconducting inorganic nanotubes. Here we report on an additional outstanding aspect of these nanostructures, namely the intrinsic coupling of electronic and mechanical properties. We observe electronic and morphology changes in a single MoS2 nanotube, exposed to charge injections by means of an atomic-force-microscopy tip. An elliptic deformation of the nanotube and helical twisting of the nanotube are visible, consistent with the reverse piezoelectric effect. Work-function changes are found to be dependent on the polarity of the injected carriers. An unexpected long-term persistence of the shape deformations is observed and explained with accumulation of structural defects and the resultant strain, which could cause a memory-like charge confinement and a long lasting modulation of the work function. Y1 - 2024 U6 - https://doi.org/10.1039/d4na00490f SN - 2516-0230 PB - Royal Society of Chemistry (RSC) ER - TY - JOUR A1 - Lindner, Matthias A1 - Pipa, Andrei V. A1 - Karpen, Norbert A1 - Hink, Rüdiger A1 - Berndt, Dominik A1 - Foest, Rüdiger A1 - Bonaccurso, Elmar A1 - Weichwald, Robert A1 - Friedberger, Alois A1 - Caspari, Ralf A1 - Brandenburg, Ronny A1 - Schreiner, Rupert T1 - Icing Mitigation by MEMS-Fabricated Surface Dielectric Barrier Discharge JF - Applied Sciences N2 - Avoiding ice accumulation on aerodynamic components is of enormous importance to flight safety. Novel approaches utilizing surface dielectric barrier discharges (SDBDs) are expected to be more efficient and effective than conventional solutions for preventing ice accretion on aerodynamic components. In this work, the realization of SDBDs based on thin-film substrates by means of micro-electro-mechanical-systems (MEMS) technology is presented. The anti-icing performance of the MEMS SDBDs is presented and compared to SDBDs manufactured by printed circuit board (PCB) technology. It was observed that the 35 mu m thick electrodes of the PCB SDBDs favor surface icing with an initial accumulation of supercooled water droplets at the electrode impact edges. This effect was not observed for 0.3 mu m thick MEMS-fabricated electrodes indicating a clear advantage for MEMS-technology SDBDs for anti-icing applications. Titanium was identified as the most suitable material for MEMS electrodes. In addition, an optimization of the MEMS-SDBDs with respect to the dielectric materials as well as SDBD design is discussed. KW - aerospace engineering KW - anti-icing KW - DBD PLASMA ACTUATORS KW - EXCITATION KW - FLOW-CONTROL KW - low-temperature plasma KW - MEMS KW - SEPARATION CONTROL KW - SDBD Y1 - 2021 U6 - https://doi.org/10.3390/app112311106 N1 - Corresponding author: Matthias Lindner VL - 11 IS - 23 SP - 1 EP - 17 PB - MDPI CY - Basel ER - TY - JOUR A1 - Scharfenberg, Georg A1 - Mottok, Jürgen A1 - Artmann, Christina A1 - Hobelsberger, Martin A1 - Paric, Ivan A1 - Großmann, Benjamin A1 - Pohlt, Clemens A1 - Wackerbarth, Alena A1 - Pausch, Uli A1 - Heidrich, Christiane A1 - Fadanelli, Martin A1 - Elsner, Michael A1 - Pöcher, Daniel A1 - Pittroff, Lenz A1 - Beer, Stefan A1 - Brückl, Oliver A1 - Haslbeck, Matthias A1 - Sterner, Michael A1 - Thema, Martin A1 - Muggenthaler, Nicole A1 - Lenck, Thorsten A1 - Götz, Philipp A1 - Eckert, Fabian A1 - Deubzer, Michael A1 - Stingl, Armin A1 - Simsek, Erol A1 - Krämer, Stefan A1 - Großmann, Benjamin A1 - Schlegl, Thomas A1 - Niedersteiner, Sascha A1 - Berlehner, Thomas A1 - Joblin, Mitchell A1 - Mauerer, Wolfgang A1 - Apel, Sven A1 - Siegmund, Janet A1 - Riehle, Dirk A1 - Weber, Joachim A1 - Palm, Christoph A1 - Zobel, Martin A1 - Al-Falouji, Ghassan A1 - Prestel, Dietmar A1 - Scharfenberg, Georg A1 - Mandl, Roland A1 - Deinzer, Arnulf A1 - Halang, W. A1 - Margraf-Stiksrud, Jutta A1 - Sick, Bernhard A1 - Deinzer, Renate A1 - Scherzinger, Stefanie A1 - Klettke, Meike A1 - Störl, Uta A1 - Wiech, Katharina A1 - Kubata, Christoph A1 - Sindersberger, Dirk A1 - Monkman, Gareth J. A1 - Dollinger, Markus A1 - Dembianny, Sven A1 - Kölbl, Andreas A1 - Welker, Franz A1 - Meier, Matthias A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Seidenstücker, Barbara A1 - Weber, Karsten A1 - Arsan, Christian A1 - Schone, Reinhold A1 - Münder, Johannes A1 - Schroll-Decker, Irmgard A1 - Dillinger, Andrea Elisabeth A1 - Fuchshofer, Rudolf A1 - Monkman, Gareth J. A1 - Shamonin (Chamonine), Mikhail A1 - Geith, Markus A. A1 - Koch, Fabian A1 - Ühlin, Christian A1 - Schratzenstaller, Thomas A1 - Saßmannshausen, Sean Patrick A1 - Auchter, Eberhard A1 - Kriz, Willy A1 - Springer, Othmar A1 - Thumann, Maria A1 - Kusterle, Wolfgang A1 - Obermeier, Andreas A1 - Udalzow, Anton A1 - Schmailzl, Anton A1 - Hierl, Stefan A1 - Langer, Christoph A1 - Schreiner, Rupert ED - Baier, Wolfgang T1 - Forschungsbericht 2015 T3 - Forschungsberichte der OTH Regensburg - 2015 Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13867 SN - 978-3-00-048589-3 CY - Regensburg ER - TY - CHAP A1 - Krysztof, Michał A1 - Urbański, Paweł A1 - Grzebyk, Tomasz A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - MEMS X-Ray Source: Electron Emitter Development T2 - 2022 21st International Conference on Micro and Nanotechnology for Power Generation and Energy Conversion Applications (PowerMEMS): 12-15 Dec. 2022, Salt Lake City, UT, USA N2 - The article presents a fabrication process and characterization of silicon emitters designed for MEMS X-ray source. The emitters, made of p-type and n-type silicon, were prepared by a modified laser micromachining process. Both types of emitters worked without any carbon nanotube coverage, which was the case in the previous realization of electron emitters. The p-type emitter gave smaller electron beam currents (<50 nA) with stable emission in a saturation region. The n-type emitter provides higher emission currents (>1 µA) not limited by saturation region, but with higher fluctuations. The final choice of emitter will be adjusted for different applications. KW - Micromechanical devices KW - MEMS KW - X-ray source KW - electron emitter KW - X-ray radiation Y1 - 2022 U6 - https://doi.org/10.1109/PowerMEMS56853.2022.10007563 SP - 248 EP - 251 PB - IEEE ER - TY - JOUR A1 - Beimler, Josef A1 - Leißl, Caroline A1 - Ebner, Lena A1 - Elsner, Michael A1 - Mühlbauer, Gerhard A1 - Kohlert, Dieter A1 - Schubert, Martin J. W. A1 - Weiß, Andreas P. A1 - Sterner, Michael A1 - Raith, Thomas A1 - Afranseder, Martin A1 - Krapf, Tobias A1 - Mottok, Jürgen A1 - Siemers, Christian A1 - Großmann, Benjamin A1 - Höcherl, Johannes A1 - Schlegl, Thomas A1 - Schneider, Ralph A1 - Milaev, Johannes A1 - Rampelt, Christina A1 - Roduner, Christian A1 - Glowa, Christoph A1 - Bachl, Christoph A1 - Schliekmann, Claus A1 - Gnan, Alfons A1 - Grill, Martin A1 - Ruhland, Karl A1 - Piehler, Thomas A1 - Friers, Daniel A1 - Wels, Harald A1 - Pflug, Kenny A1 - Kucera, Markus A1 - Waas, Thomas A1 - Schlachetzki, Felix A1 - Boy, Sandra A1 - Pemmerl, Josef A1 - Leis, Alexander A1 - Welsch, Andreas F.X. A1 - Graf, Franz A1 - Zenger, Gerhard A1 - Volbert, Klaus A1 - Waas, Thomas A1 - Scherzinger, Stefanie A1 - Klettke, Meike A1 - Störl, Uta A1 - Heyl, C. A1 - Boldenko, A. A1 - Monkman, Gareth J. A1 - Kujat, Richard A1 - Briem, Ulrich A1 - Hierl, Stefan A1 - Talbot, Sebastian A1 - Schmailzl, Anton A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Valentino, Piergiorgio A1 - Romano, Marco A1 - Ehrlich, Ingo A1 - Furgiuele, Franco A1 - Gebbeken, Norbert A1 - Eisenried, Michael A1 - Jungbauer, Bastian A1 - Hutterer, Albert A1 - Bauhuber, Michael A1 - Mikrievskij, Andreas A1 - Argauer, Monika A1 - Hummel, Helmut A1 - Lechner, Alfred A1 - Liebetruth, Thomas A1 - Schumm, Michael A1 - Joseph, Saskia A1 - Reschke, Michael A1 - Soska, Alexander A1 - Schroll-Decker, Irmgard A1 - Putzer, Michael A1 - Rasmussen, John A1 - Dendorfer, Sebastian A1 - Weber, Tim A1 - Al-Munajjed, Amir Andreas A1 - Verkerke, Gijsbertus Jacob A1 - Renkawitz, Tobias A1 - Haug, Sonja A1 - Rudolph, Clarissa A1 - Zeitler, Annika A1 - Schaubeck, Simon A1 - Steffens, Oliver A1 - Rechenauer, Christian A1 - Schulz-Brize, Thekla A1 - Fleischmann, Florian A1 - Kusterle, Wolfgang A1 - Beer, Anne A1 - Wagner, Bernd A1 - Neidhart, Thomas ED - Baier, Wolfgang T1 - Forschungsbericht 2013 T3 - Forschungsberichte der OTH Regensburg - 2013 Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7990 CY - Regensburg ER - TY - JOUR A1 - Mauerer, Wolfgang A1 - Rexhepaj, Tanja A1 - Monkman, Gareth J. A1 - Sindersberger, Dirk A1 - Diermeier, Andreas A1 - Neidhart, Thomas A1 - Wolfrum, Dominik A1 - Sterner, Michael A1 - Heberl, Michael A1 - Nusko, Robert A1 - Maier, Georg A1 - Nagl, Klaus A1 - Reuter, Monika A1 - Hofrichter, Andreas A1 - Lex, Thomas A1 - Lesch, Florian A1 - Kieninger, Bärbel A1 - Szalo, Alexander Eduard A1 - Zehner, Alexander A1 - Palm, Christoph A1 - Joblin, Mitchell A1 - Apel, Sven A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Westner, Markus A1 - Strasser, Artur A1 - Munndi, Maximilian A1 - Ebner, Lena A1 - Elsner, Michael A1 - Weiß, Nils A1 - Segerer, Matthias A1 - Hackenberg, Rudolf A1 - Steger, Sebastian A1 - Schmailzl, Anton A1 - Dostalek, Michael A1 - Armbruster, Dominik A1 - Koch, Fabian A1 - Hierl, Stefan A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Briem, Ulrich A1 - Diermeier, Andreas A1 - Spreitzer, Stefan A1 - Beiderbeck, Sabrina A1 - Hook, Christian A1 - Zobel, Martin A1 - Weber, Tim A1 - Groß, Simon A1 - Penzkofer, Rainer A1 - Dendorfer, Sebastian A1 - Schillitz, Ingo A1 - Bauer, Thomas A1 - Rudolph, Clarissa A1 - Schmidt, Katja A1 - Liebetruth, Thomas A1 - Hamer, Markus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Weber, Karsten A1 - Saßmannshausen, Sean Patrick A1 - Books, Sebastian A1 - Neuleitner, Nikolaus A1 - Rechenauer, Christian A1 - Steffens, Oliver A1 - Kusterle, Wolfgang A1 - Gömmel, Roland A1 - Wellnitz, Felix A1 - Stierstorfer, Johannes A1 - Stadler, Dominik A1 - Hofmann, Matthias J. A1 - Motschmann, Hubert A1 - Shamonin (Chamonine), Mikhail A1 - Bleicher, Veronika A1 - Fischer, Sebastian A1 - Hackenberg, Rudolf A1 - Horn, Anton A1 - Kawasch, Raphael A1 - Petzenhauser, Michael A1 - Probst, Tobias A1 - Udalzow, Anton A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian ED - Baier, Wolfgang T1 - Forschungsbericht 2016 T3 - Forschungsberichte der OTH Regensburg - 2016 Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13840 CY - Regensburg ER - TY - JOUR A1 - Lautenschläger, Toni A1 - Leis, Alexander A1 - Dendorfer, Sebastian A1 - Palm, Christoph A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Bornmann, Benjamin A1 - Navitski, Aliaksandr A1 - Serbun, Pavel A1 - Müller, Günter A1 - Liebetruth, Thomas A1 - Kohlert, Dieter A1 - Pernsteiner, Jochen A1 - Schreier, Franz A1 - Heerklotz, Sabrina A1 - Heerklotz, Allwin A1 - Boos, Alexander A1 - Herwald, Dominik A1 - Monkman, Gareth J. A1 - Treiber, Daniel A1 - Mayer, Matthias A1 - Hörner, Eva A1 - Bentz, Alexander A1 - Shamonin (Chamonine), Mikhail A1 - Johansen, Søren Peter A1 - Reichel, Marco A1 - Stoll, Andrea A1 - Briem, Ulrich A1 - Dullien, Silvia A1 - Renkawitz, Tobias A1 - Weber, Tim A1 - Dendorfer, Sebastian A1 - Grifka, Joachim A1 - Penzkofer, Rainer A1 - Barnsteiner, K. A1 - Jovanovik, M. A1 - Wernecke, P. A1 - Vögele, A. A1 - Bachmann, T. A1 - Plötz, Martin A1 - Schliekmann, Claus A1 - Wels, Harald A1 - Helmberger, Paul A1 - Kaspar, Marcel A1 - Hönicka, M. A1 - Schrammel, Siegfried A1 - Enser, Markus A1 - Schmidmeier, Monika A1 - Schroll-Decker, Irmgard A1 - Haug, Sonja A1 - Gelfert, Verena A1 - Vernim, Matthias ED - Baier, Wolfgang T1 - Forschungsbericht 2012 T3 - Forschungsberichte der OTH Regensburg - 2012 Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7834 CY - Regensburg ER - TY - JOUR A1 - Appelhans, Marie-Luise A1 - Kampmann, Matthias A1 - Mottok, Jürgen A1 - Riederer, Michael A1 - Nagl, Klaus A1 - Steffens, Oliver A1 - Dünnweber, Jan A1 - Wildgruber, Markus A1 - Roth, Julius A1 - Stadler, Timo A1 - Palm, Christoph A1 - Weiß, Martin Georg A1 - Rochholz, Sandra A1 - Bierl, Rudolf A1 - Gschossmann, Andreas A1 - Haug, Sonja A1 - Schmidbauer, Simon A1 - Koch, Anna A1 - Westner, Markus A1 - Bary, Benedikt von A1 - Ellermeier, Andreas A1 - Vögele, Daniel A1 - Maiwald, Frederik A1 - Hierl, Stefan A1 - Schlamp, Matthias A1 - Ehrlich, Ingo A1 - Siegl, Marco A1 - Hüntelmann, Sven A1 - Wildfeuer, Matthias A1 - Brückl, Oliver A1 - Sterner, Michael A1 - Hofrichter, Andreas A1 - Eckert, Fabian A1 - Bauer, Franz A1 - Dawoud, Belal A1 - Rabl, Hans-Peter A1 - Gamisch, Bernd A1 - Schmidt, Ottfried A1 - Heberl, Michael A1 - Thema, Martin A1 - Mayer, Ulrike A1 - Eller, Johannes A1 - Sippenauer, Thomas A1 - Adelt, Christian A1 - Haslbeck, Matthias A1 - Vogl, Bettina A1 - Mauerer, Wolfgang A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Sax, Irmengard A1 - Gabor, Thomas A1 - Feld, Sebastian A1 - Linnhoff-Popien, Claudia A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Sellmair, Josef ED - Baier, Wolfgang T1 - Forschung 2019 BT - Thema: Künstliche Intelligenz N2 - Bericht mit Forschungsprojekten aus verschiedenen Bereichen der OTH Regensburg mit dem Schwerpunktthema "Künstliche Intelligenz" und einem Gespräch zur "Medizin der Zukunft" T3 - Forschungsberichte der OTH Regensburg - 2019 KW - Forschung KW - Forschungsbericht KW - Künstliche Intelligenz Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7890 SN - 978-3-9818209-7-3 CY - Regensburg ER - TY - CHAP A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Schreiner, Rupert T1 - Theoretical investigations into the field enhancement factor of silicon structures T2 - 25th International Vacuum Nanoelectronics Conference (IVNC) - Jeju, Korea (South), 09.- 13.07.2012 N2 - In order to optimize our field-emitting silicon structures, the influence of geometric parameters like aspect ratio, aperture angle and curvature on the field enhancement factor was investigated by finite element simulations. A universal geometric model consisting of a rounded triangle and elliptic curvatures was taken for modeling a variety of different silicon tip as well as ridge structures. Whereas, a high dependency of the field enhancement on the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginal. KW - elemental semiconductors KW - field emitter arrays KW - field enhancement factor KW - finite element analysis KW - silicon KW - silicon field emitter Y1 - 2012 SN - 978-1-4673-1984-3 SN - 978-1-4673-1983-6 SN - 978-1-4673-1982-9 U6 - https://doi.org/10.1109/IVNC.2012.6316886 SN - 2380-6311 SN - 2164-2370 PB - IEEE CY - Piscataway, N.J. ER - TY - JOUR A1 - Prommesberger, Christian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Schreiner, Rupert T1 - Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes JF - IEEE Transactions on Electron Devices N2 - We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63% was achieved. KW - Cathodes KW - Nanostructured devices KW - Current measurement KW - Photonics KW - Electron sources KW - Emissions KW - Voltage measurement Y1 - 2017 U6 - https://doi.org/10.1109/TED.2017.2763239 SN - 5128-5133 VL - 64 IS - 12 PB - IEEE ER - TY - JOUR A1 - Langer, Christoph A1 - Bomke, Vitali A1 - Hausladen, Matthias A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Silicon Chip Field Emission Electron Source Fabricated by Laser Micromachining JF - Journal of Vacuum Science & Technology B N2 - The components for a silicon chip electron source were fabricated by laser micromachining using pulsed laser ablation and wet chemical cleaning and etching dips. The field emission electron source consists of a silicon field emission cathode with 4 × 4 conical shaped emitters with a height of 250 μm and a tip radius of about 50 nm, a 50 μm thick laser-structured mica spacer, and a silicon grid electrode with a grid periodicity of 200 μm and a bar width of 50 μm. These three components are combined to a single chip with the size of 14 × 10 mm2 and the thickness of 1 mm to form the electron source. Several of these devices were characterized in ultrahigh vacuum. Onset voltages of about 165 V and cathode currents of about 15 μA for voltages lower than 350 V were observed. Operating the electron source with an anode voltage of 500 V and an extraction grid voltage of 300 V yielded a cathode current of 4.5 μA ± 8.9%, an anode current of 4.0 μA ± 9.6%, and a corresponding grid transmittance of 89%. Regulating the anode current by the extraction grid voltage, an extremely stable anode current of 5.0 μA ± 0.017% was observed. A long-term measurement over 120 h was performed, and no significant degradation or failure was observed. KW - Ultra-high vacuum KW - Field emitter arrays KW - Etching KW - Electrical properties and parameters KW - Electron sources KW - Laser ablation KW - Laser micromachining KW - Silicon chip KW - Triodes Y1 - 2020 U6 - https://doi.org/10.1116/1.5134872 VL - 38 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Breuer, Janis A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk T1 - Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays JF - Journal of Vacuum Science and Technology B N2 - At the moment, only complicated techniques are known for the determination of array properties of field emitter arrays such as the number of active tips, the current distribution, or the individual tip radii. In this work, a method for extracting these parameters from integral measurement data is presented. A model describing the characteristics of a single emitter, including the saturation as a function of the applied voltage and the emitter radius, is developed. It is shown that experimental data of field emitter arrays can be represented as the sum of these functions and the characteristic parameters can be fitted to field emission data of an array. Using this method, the values of the radii as well as the parameters of distribution models can be determined directly. Analysis of experimental data from p-type Si emitter arrays shows that only 1–2% of the tips contribute significantly. Y1 - 2018 U6 - https://doi.org/10.1116/1.5035189 VL - 36 IS - 5 PB - AIP Publishing ER - TY - JOUR A1 - Edler, Simon A1 - Bachmann, Michael A1 - Breuer, Janis A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Jakšič, Jasna A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup JF - Journal of Applied Physics N2 - In the present work, black-silicon field emitter arrays (FEAs) are investigated regarding the influence of residual gas pressure on the characteristics and lifetime in the high voltage triode setup. Current-voltage-characteristics at different pressure levels are recorded and show a decreasing emission current with rising pressure. This decrease can be explained by an increase of the work function and charging of the emitter surface caused by adsorbates. The emission current can be restored to its initial value by heating of the FEA up to 110 °C during active emission. With this regeneration procedure, an extended lifetime from about 20 h to 440 h at a residual gas pressure of 10−5 mbar is achieved. Y1 - 2017 U6 - https://doi.org/10.1063/1.4987134 VL - 122 ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Bachmann, Michael A1 - Pahlke, Andreas T1 - Field emission properties of p-type black silicon on pillar structures JF - Journal of Vacuum Science & Technology B N2 - Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm. Y1 - 2016 U6 - https://doi.org/10.1116/1.4943919 VL - 34 IS - 2 ER - TY - JOUR A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Extraction of the characteristics of current-limiting elements from field emission measurement data JF - Journal of Vacuum Science & Technology B N2 - In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes. Y1 - 2017 U6 - https://doi.org/10.1116/1.4971768 VL - 35 IS - 2 ER - TY - CHAP A1 - Langer, Christoph A1 - Hausladen, Matthias A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Shamonin (Chamonine), Mikhail A1 - Schreiner, Rupert T1 - Field emission current investigation of p-type and metallized silicon emitters in the frequency domain T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4% and ±0.3%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit. KW - field emission KW - field emitter array KW - silicon tip KW - current fluctuation KW - current stability KW - field emission noise Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520127 PB - IEEE ER - TY - JOUR A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior JF - Journal of Vacuum Science & Technology B N2 - The authors report on the fabrication and characterization of p-type Si tip arrays with an integrated gate electrode for applications as field emission electron sources. After the reactive ion etching of the emitters, the combined thermal dry and wet oxidation was used for both the sharpening of the emitters and for the realization of an enhanced insulation layer. Au was evaporated in a self-aligned process as gate electrode. Arrays of 16 Si tips were fabricated with tip heights of about 3 μm and tip radii of about 20 nm with integrated gate electrode concentrically positioned ≈2 μm below the tip apex. Integral measurements with an additional anode showed improved field emission properties with a reproducible and stable emission behavior. A fast activation of the tips, low onset voltages of about 30 V, and moderate field emission currents up to 0.55 μA were noticed. The field emission parameters were calculated using the Fowler–Nordheim characteristics. A pronounced saturation regime was observed, and current fluctuations of less than ±1% were investigated for 30 min. Long-term measurements were carried out for a period of more than 8 h. In the first 6 h of operation, the authors observed a drift of the emission current from 0.35 to 0.55 μA caused by an increased emission surface. Y1 - 2017 U6 - https://doi.org/10.1116/1.4972519 VL - 35 IS - 1 ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon T2 - 33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon N2 - A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of 2x2 conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10- 9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 μA, 2.5μA, 5.0μA) by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5%. Y1 - 2020 SN - 978-1-7281-9454-7 U6 - https://doi.org/10.1109/IVNC49440.2020.9203470 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Mecani, Mirgen A1 - Huang, Yifeng A1 - She, Juncong A1 - Schreiner, Rupert ED - Tiginyanu (Ed.), Ion M. T1 - Field emission properties of ring-shaped Si ridges with DLC coating T2 - Proc. SPIE 10248, Nanotechnology VIII, 102480H (30 May 2017) N2 - We report on the fabrication and the emission characterization of single ring-shaped Si ridges with a coating of diamond-like carbon (DLC). The reactive ion etching and the subsequent inductively coupled plasma step were adjusted to realize ring-shaped Si ridges with a height of 7.5 μm respectively 15 μm and an apex radius of 20 – 25 nm. The samples were coated with a DLC layer (thickness ≈ 2 – 5 nm) by a filtered cathodic vacuum arc deposition system in order to lower the work function of the emitter and to improve the field emission characteristics. The field emission characterizations were done in diode configuration with cathode and anode separated by a 50 μm thick mica spacer. A higher emission current was carried out for the ring-shaped Si ridge in comparison to the point-shaped Si tips due to the increased emission area. The highest emission current of 0.22 μA at 1000 V was measured on a DLC-coated sample with the highest aspect ratio. No degradation of the emission current was observed in the plateau regime during a measurement period of 6 h. Finally, no decreasing performance of the field emission properties was found due to changes in the geometry or destructions. KW - Etching KW - Scanning electron microscopy KW - Silicon carbide KW - Carbon KW - Mica KW - Oxides Y1 - 2017 U6 - https://doi.org/10.1117/12.2265627 VL - 102480H PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Field emission from three-dimensional epitaxial grown GaN-microrods T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - A novel three-dimensional epitaxial technique allows on patterned substrates the realization of gallium nitride pillars, also known as nano- and microrods. The typical dimensions of the microrods are in the range of one micron for the radius of the hexagonal footprint and about 10 μm in height. The microrods consist of a semiconductor heterostructure with an n GaN core, a n-GaN shell, a p GaN shell and an intermediate quantum well layer. The field emission properties were investigated in diode configuration by integral field emission measurements in a vacuum chamber at pressures around 10 -9 mbar. The spacer was mica with a thickness of 50 μm. A metallized fine-meshed nitride grid (or a metallized Si-grid) was used as anode. A current of about 1 μA at a voltage of 1250 V (1750 V) was measured. An onset field of about 12.5 MV/m (20 MV/m) and field enhancement factors in the range of 200 to 500 (150 to 300) were found. The investigation with the fine-meshed grid showed an expected pronounced saturation region. KW - field emission KW - GaN KW - LED Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551477 SN - 2380-6311 SP - 87 EP - 88 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission from black silicon structures with integrated gate electrode T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - Black silicon structures with integrated gate electrode were realized by using an improved fabrication process. An enhanced insulation layer was achieved by a combination of dry and wet oxidation, and a gold layer was evaporated as gate electrode. The black silicon structures were prepared with a RIE/ICP etching process at room temperature. Arrays of 16 and 100 apertures with buried p-doped black silicon whiskers have been fabricated. These structures have an emitter height of approximately 1.5 μm with tip radii between 5 nm and 30 nm. The whiskers are surrounded by the gate electrode in a distance of 1.5 μm. Integral field emission measurements yielded an onset voltage of 92 V for 16 apertures and 60 V for 100 apertures for an emission current of 1 nA. Maximum emission currents up to 0.2 μA were observed for the array with 100 apertures at a cathode voltage of 200 V. Stability measurements showed a current fluctuation of ± 21% at a mean value of the emission current of 12 nA over a period of 30 minutes for 16 apertures with b-Si whiskers. KW - field emission KW - black silicon KW - integrated gate electrode Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551532 SN - 2380-6311 SP - 219 EP - 220 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Microrods and microlines by three-dimensional epitaxially grown GaN for field emission cathodes T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - The three-dimensional epitaxial technique allows the realization of gallium nitride lines in addition to the rods. To optimize the properties of GaN-based field emission cathodes further investigations and an improvement of the epitaxial process were performed. The microrods and microlines consist of a one-order higher n-doped gallium nitride in comparison to the gallium nitride layer on the sapphire substrate. The typical height of the microrods and -lines is about 5 μm. The field emission properties of these structures were investigated in diode configuration by integral field emission measurements at pressures below 10 -9 mbar. For the microrods (microlines) a voltage of 1100 V (2000 V) was measured for a field emission current of about 0.5 μA with an onset field of about 12 MV/m (24 MV/m). Furthermore, the field enhancement factors for microrods and -lines are in the range of 300 and 200, respectively. KW - field emission KW - GaN KW - LED KW - Gallium nitride KW - Epitaxial growth Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051576 SP - 130 EP - 131 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Extraction of the characteristics of limiting elements from field emission measurement data T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - In this contribution we will present an algorithm to extract the characteristics of non-Fowler-Nordheim (FN) circuit elements from saturation limited field emission (FE) measurement data. The method for calculating the voltage drop on limiting circuit elements is based on circuit theory as well as Newton's method. Since no assumption on the limiting circuit is made, this method is applicable to any FE data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters are fully taken into account throughout the algorithm. External serial resistors and a limiting p-doped substrate are analyzed, where the latter shows a diode-like behavior. Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551474 SN - 2380-6311 SP - 81 EP - 82 PB - IEEE ER - TY - CHAP A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Huang, Yifeng A1 - She, Juncong T1 - Gated p-Si field emission cathode applied in an ionization vacuum gauge T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - A commercial Bayard-Alpert ionization vacuum gauge was equipped with a field emission electron source based on a cathode consisting of an array of 16 gated, p-doped, and DLC-coated Si-tips and characterized. An anode current of about 1.3 μA led to an ion current of 7 fA at 3×10 -7 mbar and 0.8 pA at 4×10 -5 mbar. Whereas at pressures higher than 4×10 -5 mbar the emission current of the electron source decreased, the ratio of ion and anode current remained linear. A nearly constant sensitivity of ~ 17 mbar -1 of the ionization vacuum gauge within the investigated pressure range was depicted. KW - field emission KW - field emitter array KW - Si KW - DLC KW - electron source KW - ionization vacuum gauge Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551500 SN - 2380-6311 SP - 145 EP - 146 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Control of the electron source current T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015% is observed. However, the achievable stability of the transmitted electron current is limited due to a variation of the extraction grid current ratio showing a standard deviation of 4.33%. By regulating the difference of the emission current and the extraction grid current an improved stability of the transmitted electron current down to a standard deviation of 0.280% is observed. Even with operation at 2 × 10 -5 mbar a standard deviation of 0.558% is achieved. KW - Standards KW - Circuit stability KW - Power system stability KW - Current measurement KW - Voltage measurement KW - Electron sources KW - Stability analysis Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051550 SP - 66 EP - 67 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Linghu, Shuangyi A1 - Gu, Fuxing T1 - Field Emission Behaviour of Single-Crystal Pd Nanowires T2 - 33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon, France N2 - Single-crystal Pd nanowires with typically 100 nm diameters and lengths from several micrometers to tens of micrometers were grown on Al 2 O 3 substrates in a furnace with Ar atmosphere. Integral field emission measurements of such samples after Pd coating (~10 nm) were performed in a diode configuration with a 50 μm mica spacer in a vacuum chamber at pressures of about 10 -9 mbar. The IV measurement of the sample shows an integral emission current up to 2 μA at a voltage of 500 V (10 MV/m) and an onset voltage for a current of 1 nA of about 275 V. The corresponding Fowler-Nordheim plot show a linear behavior, like expected for a metal needle. Y1 - 2020 SN - 978-1-7281-9454-7 U6 - https://doi.org/10.1109/IVNC49440.2020.9203510 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Benzocyclobutene as a novel integrated spacer material in a field emission electron source T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - For the realization of a miniaturized field emission electron source we tested benzocyclobutene (BCB) as a new spacer material between cathode and anode. We fabricated black silicon emitters and characterized the emission behavior with an integrated 5 μm thin and large-area spacer of BCB. The integrated BCB layer allows the realization of a compact electron source with only two components consisting of a cathode with BCB and a grid. The comparison with other spacer materials like polyimide (25 μm thickness) or mica (50 μm thickness) revealed for the cathode with BCB a significantly reduced operational voltage of 240 V for a field emission current of 1 μA. KW - field emission KW - benzocyclobutene KW - integrated spacer KW - electron source KW - black silicon Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051605 SP - 192 EP - 193 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Light emitting diodes based on three-dimensional epitaxial grown crystalline GaN rods T2 - 7. MikroSystemTechnik Kongress "MEMS, Mikroelektronik, Systeme", 23.-25. Oktober 2017, München Y1 - 2017 SN - 978-3-8007-4491-6 SP - 131 EP - 134 PB - VDE-Verlag CY - München ER - TY - CHAP A1 - Lindner, Matthias A1 - Berndt, Dominik A1 - Tschurtschenthal, Karl A1 - Ehrlich, Ingo A1 - Jungbauer, Bastian A1 - Schreiner, Rupert A1 - Pipa, Andrei V. A1 - Hink, Rüdiger A1 - Foest, Rüdiger A1 - Brandenburg, Ronny A1 - Neuwirth, Daniel A1 - Karpen, Norbert A1 - Bonaccurso, Elmar A1 - Weichwald, Robert A1 - Max, Alexander A1 - Caspari, Ralf T1 - Aircraft Icing Mitigation by DBD-based Micro Plasma Actuators T2 - AIAA AVIATION 2020 FORUM: June 15-19, 2020 N2 - We present the application of plasma actuators as a technology for ice prevention at airfoils. The miniaturized dielectric barrier discharge (DBD) plasma actuators (PA) were fabricated by means of microelectromechanical systems (MEMS). We elucidate how to make the actuator samples scalable and applicable to any desired shape by the use of flexible inorganic zirconia substrates. For this purpose, we applied our developed embedding method to integrate the micro actuators in modern carbon/glass fiber reinforced polymer (CFRP/GFRP) materials. Next, the embedded actuator samples were mounted on a mechanical air profile-like fixture and placed in the icing wind tunnel iCORE. The samples were tested in rime ice conditions at temperatures of -15 to -20° C and air speeds up to 30 m/s. Unlike other groups we used a thin film zirconia substrate as dielectric for the plasma actuator. Due to the low substrate thickness of just 150 µm, an operating voltage of 2 kVRMS is already sufficient enough for a stable plasma formation. The experiments show that the operated actuator was able to prevent the ice formation and first indications of a De-icing function were also found. Hence, we show that it is feasible to realize an anti-icing system with zirconia-based plasma actuators operated at lower voltages compared to conventional ones. Y1 - 2020 U6 - https://doi.org/10.2514/6.2020-3243 ER - TY - JOUR A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - Silicon Field Emission Electron Source With Individually Controllable Single Emitters JF - IEEE Transactions on Electron Devices N2 - An electron source with an array of individually controllable single tips allows the observation of each emitter current simultaneously as well as the measurement of the integral current. Furthermore, the initial activation process of the individual tips and current distribution of the source can be examined. The Si cathode consists of an array of 2 x 2 conically shaped emitter structures on a borosilicate glass substrate. The emitters were fabricated by laser micromachining and wet etching. Integral field emission (FE) measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10(-9) mbar with a self-aligned Si extraction grid, due to adjustment pins. The total emission current was regulated to a predefined value (4.0, 10, 20, 40, and 50 mu A) by an external regulating circuit and recorded individually during the measurement. The onset voltage for a current of 1 nA varied between 320 and 430 V. The voltage conversion factor is in the range of 7.6 x 10(4) cm(-1) to 1.3 x 10(5) cm(-1). Constant currentmeasurementsover a longer periodof time (1800 values with a sample rate of 0.5 Hz) were performed and show a total current fluctuation less than 0.6% due to the regulation circuit. Despite the stable total current in regulated operation, it was observed that the individual emitters fluctuate up to 75% for low (similar to 10(-8) A) and 5% for high (similar to 10(-5) A) currents. KW - Current distribution KW - current limiters KW - electron emission KW - electron sources KW - silicon-on-insulator Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3093374 VL - 68 IS - 8 SP - 4116 EP - 4122 PB - IEEE ER - TY - JOUR A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - High current silicon nanowire field emitter arrays JF - Journal of Vacuum Science & Technology B N2 - Arrays of n-doped silicon nanowire field emitters with a high aspect ratio are realized by a novel dry etching technique. Compared to the high current silicon emitters in the literature, the manufacturing process is much simpler and requires only a single photolithography step and two dry etching steps. The cathodes realized with this method exhibit a total current of 20 mA from an active area of 4×4 mm2, which is significantly higher than that for most known structures made from silicon and also represents good performance in comparison with other emitter types, e.g., carbon nanotubes. In addition to characterization in ultrahigh vacuum, measurements at 10−5 mbar are performed and compared with our recent silicon emitters. Compared to these cathodes, the structures with the nanowires exhibit at least two orders of magnitude higher current-carrying capability. Y1 - 2022 U6 - https://doi.org/10.1116/6.0001639 VL - 40 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Remskar, Maja A1 - Hüttel, Andreas K. A1 - Shubina, Tatiana V. A1 - Seabaugh, Alan A1 - Fathipour, Sara A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Confinement Related Phenomena in MoS2 Tubular Structures Grown from Vapour Phase JF - Israel Journal of Chemistry N2 - We review recently discovered phenomena observed in the MoS2 tubular structures, which were synthesized by a lasting chemical transport reaction nearly at chemical equilibrium. Such MoS2 nanotubes are distinguished by low density of structural defects, thin walls and a high aspect ratio, which intrinsically provide a confined, edge-free geometry. Quantum confinement with single electron conductance was recorded and a bright exciton photoluminescence with appearance of whispering gallery modes was observed. In addition, the field-effect transistors and field emitters based on single MoS2 nanotubes were demonstrated. These discoveries revitalize research of MoS2 curved structures grown from vapour phase, which were reported several decades ago. Y1 - 2021 U6 - https://doi.org/10.1002/ijch.202100100 SN - 1869-5868 VL - 62 IS - 3-4 SP - 1 EP - 11 PB - Wiley ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Field Emission Arrays from Graphite Fabricated by Laser Micromachining T2 - 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - Arrays of 4x4 conical shaped emitters were directly structured by laser micromaching. Assembled as an electron source with a spacer and Si-grid, they were investigated by means of IV-measurement in ultra-high vacuum. The IV-measurements of the sample show integral emission currents up to 10 µA at a voltage of 1000 V (11 MV/m). Initially, an ideal FN-behaviour is noticeable. The deviation for higher voltage values in the FN-plot is caused by the change of the work function, which was proven by numerical calculations. KW - field emission array KW - graphite KW - laser micromachining Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600736 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Lindner, Matthias A1 - Berndt, Dominik A1 - Jungbauer, Bastian A1 - Ehrlich, Ingo A1 - Schreiner, Rupert A1 - Pipa, Andrei V. A1 - Hink, Rüdiger A1 - Foest, Rüdiger A1 - Brandenburg, Ronny A1 - Max, Alexander A1 - Caspari, Ralf T1 - Fabrication, surface integration and testing of miniaturized dielectric barrier discharge plasma actuators for active flow control applications T2 - AIAA Aviation 2019 Forum, 17-21 June 2019, Dallas, Texas Y1 - 2019 U6 - https://doi.org/10.2514/6.2019-2998 ER - TY - CHAP A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Serbun, Pavel A1 - Bachmann, Michael A1 - Müller, Günter A1 - Schreiner, Rupert T1 - High aspect ratio silicon tip cathodes for application in field emission electron sources T2 - 2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland N2 - Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5–6 µm and apex radii less than 20nm. Integral field emission measurements of the arrays yielded low onset-fields in the range of 8–12V=µm and field enhancement factors between 300 and 700. The I-E curves of n-type structures showed the usual Fowler-Nordheim behaviour, whereas p-type structures revealed a significant saturation region due to the limited number of electrons in the conduction band and a further carrier depletion effect caused by the pillar. The maximum integral current in the saturation region was 150 nA at fields above 30V=µm. An excellent stability of the emission current of less than ± 2% fluctuation was observed in the saturation region. For n-type Si a maximum integral current of 10 µA at 24V=µm and an average current stability with a fluctuation of ± 50% were measured. KW - Current measurement KW - Etching KW - FABRICATION KW - field emission KW - field emitter array KW - GEOMETRY KW - Iron KW - Sensor arrays KW - silicon KW - silicon tip Y1 - 2014 U6 - https://doi.org/10.1109/IVNC.2014.6894824 SP - 222 EP - 223 PB - IEEE ER - TY - JOUR A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Langer, Christoph A1 - Herdl, Florian A1 - Bergbreiter, Lukas A1 - Dams, Florian A1 - Miyakawa, Natuski A1 - Eggert, Tobias A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Vacuum-sealed field emission electron gun JF - Journal of Vacuum Science & Technology B N2 - A compact vacuum-sealed field emission electron gun with an operation voltage below 5 kV is presented. With a 150 nm thick pyrolytic carbon membrane, a transmission of 40% at 5 kV is obtained. For more than 2500 h of continuous operation at an emission current of 100 nA, no significant increase (<50V ) and almost no degradation were found. From this measurement, a lifetime of more than 10 000 h at continuous operation with approximately a linear increase of the extraction voltage from about 545 V to about 730 V is predicted. This electron source enables application of field emitter arrays in poor vacuum or even ambient pressure. ACKNOWLEDGMENT This work was supported by the German Federal Ministry for Economic Affairs and Energy under Project No. ZF4081502GM8. C.P., R.L., M.H., and R.S. were supported by Grant No. ZF4562901GM8. Y1 - 2020 U6 - https://doi.org/10.1116/1.5139316 VL - 38 IS - 2 PB - AIP Publishing ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Schreiner, Rupert T1 - Simulation and Fabrication of Silicon Field Emission Cathodes for Cold Electron Sources JF - Advanced Materials Research N2 - We report on the simulation and fabrication of nanostructured silicon surfaces for field emission (FE) applications, e.g. ionization sensors and x-ray tubes. For the design and optimization of field-emitting silicon structures, the influence of the geometric parameters like tip height, apex radius, aperture angle and curvature shape on the field enhancement factor was investigated by simulation using finite element method. A universal geometric model which describes the real geometry of our silicon structures sufficiently accurate was taken for modeling a variety of different silicon tip structures as well as ridge structures. While a high dependency of the field enhancement on the aspect ratio and the aperture angle was found, the simulations show that the elliptic curvature affects the field enhancement only marginally. Finally, an improved process for fabrication of such silicon structures on n-type as well as p-type substrate is described, using reactive ion etching with adjustable anisotropy, wet thermal oxidation and wet etching. KW - field emission cathodes KW - field enhancement factor KW - silicon field emitter Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/amr.1024.48 VL - 1024 SP - 48 EP - 51 ER - TY - JOUR A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Field emission arrays from graphite fabricated by laser micromachining JF - Journal of Vacuum Science & Technology B N2 - Laser micro structuring allows the manufacturing of conical shaped emitters on a graphitized carbon substrate without any additional treatment. Integral field emission measurements were performed in a diode configuration with a 50 µm mica spacer and a metalized Si-grid in a vacuum chamber at pressures of about 10-9 mbar. Emission currents up to 10 µA at a voltage of 1000 V (11 MV/m) with a positive current drift were observed for an array of 16 emitters. A strong modification of the emitter tip is noticeable after individual measurements. A comparable alteration of the surface is also achieved by an electrochemical treatment of the samples with a potassium hydroxide solution. However, the IV-measurements of such samples show higher onset voltages, but also higher integral emission currents. For all arrays an ideal FN behaviour is only noticeable at applied voltages below 625 V (7 MV/m). Numerical calculations indicate that the deviation in the FN-plot for higher voltage values is caused by the change of the effective work function. Y1 - 2022 U6 - https://doi.org/10.1116/6.0001547 VL - 40 IS - 2 PB - AIP Publishing ER - TY - JOUR A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian A1 - Schreiner, Rupert T1 - Improvement of Homogenity and Aspect Ratio of Silicon Tips for Field Emission by Reactive-Ion Etching JF - Advances in materials science and engineering N2 - The homogeneity of emitters is very important for the performance of field emission (FE) devices. Reactive-ion etching (RIE) and oxidation have significant influences on the geometry of silicon tips. The RIE influences mainly the anisotropy of the emitters. Pressure has a strong impact on the anisotropic factor. Reducing the pressure results in a higher anisotropy, but the etch rate is also lower. A longer time of etching compensates this effect. Furthermore an improvement of homogeneity was observed. The impact of uprating is quite low for the anisotropic factor, but significant for the homogeneity. At low power the height and undercut of the emitters are more constant over the whole wafer. The oxidation itself is very homogeneous and has no observable effect on further variation of the homogeneity. This modified fabrication process allows solving the problem of inhomogeneity of previous field emission arrays. Y1 - 2014 U6 - https://doi.org/10.1155/2014/948708 VL - 2014 PB - Hindawi ER - TY - GEN A1 - Bieker, Johannes A1 - Schlaak, Helmut F. A1 - Wilfert, Stefan A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Development of FE-based electron sources for XHVion gauges in cryogenic vacuum environments T2 - 32nd International Vacuum Nanoelectronics Conference (IVNC 2019), 22.-26.07.2019, Cincinnati, USA Y1 - 2019 ER - TY - GEN A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Individually Addressable Silicon Field Emission Cathodes Fabricated by Laser Micromachining T2 - 7th ITG International Vacuum Electronics Workshop (IVEW) 2020 and 13th International Vacuum Electron Sources Conference (IVeSC) 2020, 26. - 29.5.2020, Bad Honnef Y1 - 2020 ER - TY - GEN A1 - Hausladen, Matthias A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Fast Pulse Source for Field Emission Applications T2 - 7th ITG International Vacuum Electronics Workshop (IVEW) 2020 and 13th International Vacuum Electron Sources Conference (IVeSC) 2020, 26. - 29.5.2020, Bad Honnef Y1 - 2020 ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Muller, F. A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter T1 - Comparison of integral and local field-emission properties of Mo-coated p-Si tip arrays T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC), 13-17 July 2015, Guangzhou, China N2 - Silicon tip arrays were fabricated by means of reactive ion etching followed by oxidation for final sharpening and molybdenum thin film coating. The field-emission (FE) properties of these Mo-coated p-Si tip arrays were systemically investigated by different measurement techniques. Integral measurements in diode configuration yielded a turn-on field (for 1 nA) of 22 V/μm and nearly stable FE currents up to 6.6 μA at 38 V/μm. The effective field enhancements factor extracted from the FN plots is about 180. Detailed investigations of these FE arrays were also performed by means of field emission scanning microscopy combined with electron microscopy. A rather limited efficiency of the tips (50% at 1500 V) and FE homogeneity (180 nA at 700 V) might be correlated with the varying morphology of the tips and the presence of oxides. Local I-V measurements of selected single tips revealed both activation and deactivation effects, which finally resulted in nearly reproducible I-V curves. Current stability measurements at a constant voltage showed rather large fluctuations (0.1-1 μA) of the FE current, which could be reduced up to 1.7% by using of a PID-regulated voltage source. SEM images showed unchanged tip shape after the current processing. KW - CATHODES KW - Coatings KW - Current measurement KW - field emission KW - Iron KW - Mo-coated KW - p-Si tip KW - Scanning electron microscopy KW - silicon KW - tip arrays KW - Vacuum technology Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225579 SP - 192 EP - 193 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Fabrication and simulation of silicon structures with high aspect ratio for field emission devices T2 - 2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland N2 - To obtain higher field enhancement factors of Si-tip structures, we present an improved fabrication process utilizing reactive-ion etching (RIE) with an inductively coupled plasma (ICP). In our design, a pillar under the tips is realized by a combination of RIE with ICP. With adjusted power settings (≈ 240 W) and step times (<; 5 s), vertical slopes with a low roughness of approximately 10 nm to 20 nm are possible. The remaining silicon is oxidized thermally to sharpen the emitters. A final tip radius of R <; 20 nm is obtained for the tips of the emitters. The pillar height HP can be mainly adjusted by the duration of the ICP-etching step. A total emitter height of H ≈ 6 μm with a pillar height of HP ≈ 5 μm is achieved. Simulations with COMSOL Multiphysics® are applied to calculate the field enhancement factor β. A two-dimensional model is used in rotational symmetry. In addition to the previous model, a pillar with a varying diameter ØP and height HP is added. A conventional emitter (H = 1 μm and R = 20 nm) placed on a pillar of the height HP ≈ 5 μm approximately results in a three times higher β-factor (β≈ 105). By decreasing the diameter ØP a slight increase of the β-factor is observed. However, the aspect ratio of the emitter mainly influences on the β-factor. KW - Anodes KW - CATHODES KW - FABRICATION KW - field emission KW - field emitter array KW - field enhancement factor KW - Iterative closest point algorithm KW - Lead KW - silicon tips Y1 - 2014 U6 - https://doi.org/10.1109/IVNC.2014.6894805 SP - 193 EP - 194 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Ławrowski, Robert Damian T1 - Gated p-Si field emitter arrays for sensor applications T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC) N2 - We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V. KW - CATHODES KW - Current measurement KW - Current stabilization KW - field emission KW - integrated gate-electrode KW - Iron KW - Logic gates KW - semiconductor KW - Semiconductor device measurement KW - silicon KW - silicon tip array Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225567 SP - 164 EP - 165 PB - IEEE ER -