TY - JOUR A1 - Schels, Andreas A1 - Edler, Simon A1 - Herdl, Florian A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Ritter, Daniela A1 - Dudeck, Markus A1 - Duesberg, Felix A1 - Meyer, Manuel A1 - Pahlke, Andreas A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - In situ quantitative field emission imaging using a low-cost CMOS imaging sensor JF - Journal of Vacuum Science & Technology B N2 - Spatially resolved field emission measurements represent an important factor in further development of existing field emitter concepts. In this work, we present a novel approach that allows quantitative analysis of individual emission spots from integral current-voltage measurements using a low-cost and commercially available CMOS camera. By combining different exposure times to extrapolate oversaturated and underexposed pixels, a near congruence of integral current and image brightness is shown. The extrapolation also allows parallel investigation of all individual tips participating in the total current with currents ranging from a few nanoampere to one microampere per tip. The sensitivity, which is determined by the integral brightness-to-current ratio, remains unchanged within the measurement accuracy even after ten full measurement cycles. Using a point detection algorithm, the proportional current load of each individual tip of the field emitter array is analyzed and compared at different times during the initial measurement cycle. Together with the extracted I-V curves of single emission spots from the integral measurement, the results indicate the effect of premature burnout of particularly sharp tips during conditioning of the emitter. KW - ARRAYS KW - ELECTRON-EMISSION KW - EMITTERS KW - FakANK Y1 - 2022 U6 - https://doi.org/10.1116/6.0001551 VL - 40 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Dudeck, Markus A1 - Duesberg, Felix A1 - Pahlke, Andreas A1 - Hausladen, Matthias A1 - Buchner Philipp, A1 - Schreiner, Rupert T1 - Origin of the current saturation level of p-doped silicon field emitters JF - Journal of Vacuum Science & Technology B N2 - Using p-type semiconductors for field emitters is one simple way to realize an integrated current limiter to improve the lifetime of the cathode. In this work, the origin of the current saturation of p-type silicon emitters is investigated in detail. Single emitters are electrically characterized and compared to simulation results. With a simulation model considering a high surface generation rate and elevated tip temperature, a good agreement to the measured data is found. This observation is supported further by alteration of the surface experimentally. Electrical measurements after different treatments in hydrofluoric acid as well as heated and subsequent operation at room temperature are well explained by the influence of surface generation. Furthermore, it is shown that the field penetration leads to a small voltage drop and a strong geometry-dependent reduction of the field enhancement factor. KW - EMISSION KW - GROWTH KW - NATIVE-OXIDE Y1 - 2022 U6 - https://doi.org/10.1116/6.0001554 VL - 40 IS - 1 PB - AIP Publishing ER - TY - CHAP A1 - Tschurtschenthaler, Karl A1 - Krenkel, Lars A1 - Schreiner, Rupert T1 - Mechano-optical micro pillar sensor for biofluidmechanic wall shear stress measurements T2 - 25th Congress of the European Society of Biomechanics (ESB), July 7-10, 2019, Vienna, Austria Y1 - 2019 UR - https://esbiomech.org/conference/archive/2019vienna/Contribution_608.pdf ER - TY - JOUR A1 - Bieker, Johannes A1 - Roustaie, Farough A1 - Schlaak, Helmut F. A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lotz, Marcel A1 - Wilfert, Stefan T1 - Field emission characterization of in situ deposited gold nanocones with variable cone densities JF - Journal of Vacuum Science and Technology B N2 - For the fabrication of field emitter cathodes with metallic nanocones, an in situ fabrication technique based on electrodeposition in an ion track etched polymer template was used. Three samples with nanocones made of gold and different cone densities were deposited on a circular electrode with a diameter of 2.5 mm, using templates with pore density of 6 × 104, 4 × 105, and 1 × 106 cones/cm2. The cones had a height of 24 μm, a base diameter between 3 and 3.75 μm, and a tip diameter below 500 nm. Integral field emission measurements revealed onset fields of down to 3.1 V/μm and average field enhancement factors of up to 1240. For one sample, the maximum emission current from the cathode reached 142.2 μA at an applied voltage of 338 V between cathode and extraction grid, which had a distance of 50 μm. To investigate the stability of the field emission current, cumulative long-term measurements were performed for over 50 h. A stable emission current of (31.0 ± 1.3) μA at an average applied voltage of 290 V (E = 5.8 V/μm) was observed. For currents above 100 μA, a decrease of the current and therefore a degradation of the emitter structures occurred. Y1 - 2018 U6 - https://doi.org/10.1116/1.5009504 VL - 36 IS - 2 PB - AIP Publishing ER - TY - CHAP A1 - Dams, Florian A1 - Schreiner, Rupert T1 - A high thermal resistance MEMS-based Pirani vacuum sensor chip T2 - Smart sensors, actuators and MEMS VI : 24 - 26 April 2013, Grenoble, France / [part of SPIE microtechnologies] N2 - The performance of thermal conductivity vacuum gauges can be improved by a well-designed geometry. The lower measurement range limit is determined by the size of the active sensing area and the thermal conduction heat losses through the supporting structures. The upper measurement range is limited by the distance between the heated element and the cold reference plane. Silicon based MEMS-technology gives the possibility to fabricate both sensing structures with suitable areas out of low thermal conductive materials and narrow gaps in order to extend the measurement range in both directions. In this work we present a MEMS-process to fabricate high thermal resistance sensor structures. The rectangular sensitive areas are anchored by four beams and are structured out of low thermal conductive PECVD-siliconnitride films with 1 µm in thickness. The metallic heating structure is completely embedded in the SiN-layer. Both sensitive area and its support beams were released from the silicon bulk material by anisotropic underetching. In this way a free-supporting structure with a gap of 150 μm to the silicon substrate was formed. The influence of the filament geometry and temperature was systematically investigated to determine the properties of the chips as thermal conductivity vacuum gauges. The temperature of the sensitive area was held constant by a self-balancing bridge circuit and the heating power was measured by a Δ-Σ-ADC. The average solid state thermal conductivity is in the order of 106WK1. The measuring range of the most sensitive structures covers 8 orders of magnitude from 105 mbar to 1000mbar. Y1 - 2013 U6 - https://doi.org/10.1117/12.2017345 PB - SPIE CY - Bellingham, Wash. ER - TY - GEN A1 - Düsberg, Felix A1 - Bachmann, Michael A1 - Edler, Simon A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Bunert, Erik A1 - Wendt, Cornelius A1 - Zimmermann, Stefan T1 - Novel Non-Radiative Electron Source T2 - 43rd International Symposium of Capillary Chromatography & 16h GC x GC Symposium 2019 N2 - Recently a non-radioactive electron capture detector based on a thermionic electron emitter has been demonstrated [1]. Using field emitter arrays (FEAs) would yield non-radioactive portable low power devices with fast switching capability. By combining FEAs with a vacuum-sealed housing and an electron transparent membrane window, such electron sources can be operated in an ambient pressure environment. Y1 - 2019 ER - TY - CHAP A1 - Berndt, Dominik A1 - Lindner, Matthias A1 - Schreiner, Rupert A1 - Pipa, Andrei V. A1 - Hink, Rüdiger A1 - Brandenburg, Ronny A1 - Foest, Rüdiger A1 - Geils, Judith A1 - Sander, Aljoscha A1 - Hoffmann, Florian A1 - Matz, Daniel A1 - Baars, Albert A1 - Kesel, Antonia A1 - Max, Alexander A1 - Caspari, Ralf T1 - Realization of Multifunctional Surfaces Containing MEMS-based DBD Plasma Actuators and Biomimetic Structures for Flow Manipulation T2 - AIAA Aviation 2019 Forum, 2019, Dallas Y1 - 2019 U6 - https://doi.org/10.2514/6.2019-2999 PB - American Institute of Aeronautics and Astronautics, Inc ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert T1 - Stable and low noise field emission from single p-type Si-tips T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - Single gated p-type Si-tips with two different tip radii were fabricated. An emission current of 2.40 μA was measured for the sharp-edged tip at a voltage of 170 V. In contrast, a stable and reproducible emission behavior was observed with an increased tip radius resulting in a pronounced saturation region between 90 V and 150 V, but merely an emission current of 0.55 μA at 150 V. More remarkable is the stable emission behavior with fluctuation of ± 4 % during a measurement period of 30 minutes. The integral emission current in a homogeneous tip array (16 emitters) showed nearly the same I-V characteristics compared to the single tip and is therefore, most dominated by only a stable single tip in the array. KW - field emission KW - p-type Si-tips KW - gate-electrode KW - emission stability KW - low current fluctuations Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520018 PB - IEEE ER - TY - CHAP A1 - Lindner, Matthias A1 - Berndt, Dominik A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert T1 - Field emission assisted micro plasma discharges at vacuum and atmospheric pressures T2 - 31st International Vacuum Nanoelectronics Conference (IVNC), 2018, Kyoto, Japan N2 - Spatially confined non-equilibrium plasmas at vacuum and atmospheric pressure in the dimensions from a few microns to one millimeter are a promising approach to the generation and maintenance of stable glow discharges. The realization of these micro-discharges or micro-plasmas enable more accurate investigations in the field of micro plasma research. We report on field emission assisted micro plasmas excited by an alternating current with frequencies up to 1 kHz. Due to the field enhancement caused by an array of Si nano-tip structures the ignition voltage of stable plasma discharges can be reduced by 30%. Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520181 ER - TY - CHAP A1 - Berndt, Dominik A1 - Lindner, Matthias A1 - Tschurtschenthaler, Karl A1 - Langer, Christoph A1 - Schreiner, Rupert T1 - Miniaturized Plasma Actuator Flow Measurements by MEMS-Based Thermal Conductivity Sensors T2 - MDPI Proceedings of Eurosensors 2018, 9-12 September, Graz N2 - The gasflow created by a minaturized dielectric barrier discharge (DBD) plasma actuator is measured by a MEMS-based thermal conductivity gas sensor giving an indication of flow velocity and flow direction. The possiblity of several sensors in a small area gives a far better accuracy of local flow phenomena compared to conventional sensors. This is important for a better understanding of plasma- induced flow characteristics. KW - thermal conductivity sensors; plasma actuators; surface hotfilms; sensors for aerospace Y1 - 2018 U6 - https://doi.org/10.3390/proceedings2130939 VL - Vol.13 IS - 2 ER - TY - CHAP A1 - Edler, Simon A1 - Hansch, Walter A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - The influence of residual gas pressure on the characteristics of black-Silicon field emitter arrays in a high voltage triode setup is investigated. I-Vcharacteristics at different pressure levels show a decrease of emission current with rising pressure. This can be explained by an increase of the work function and charging of the emitter surface due to adsorbates. The initial characteristics can be restored by heating the FEA up to 110 °C during electron emission. This regeneration procedure enables an extension of the lifetime from about 20 h to 440 h at a residual gas pressure of 10 -5 mbar. KW - semiconductor field emission KW - field emitter array KW - silicon tips KW - emission current stability Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520214 PB - IEEE ER - TY - JOUR A1 - Berndt, Dominik A1 - Muggli, Josef A1 - Wittwer, Franz A1 - Langer, Christoph A1 - Heinrich, Stephan A1 - Knittel, Thorsten A1 - Schreiner, Rupert T1 - MEMS-based thermal conductivity sensor for hydrogen gas detection in automotive applications JF - Sensors and Actuators A: Physical N2 - Accurate detection of hydrogen gas in vehicle interiors is very important for the future of a fuel cell car. Since this type of gas is highly volatile and flammable, the measurement methods have to be very reliable and precise due to safety reasons. In this paper a thermal conductivity sensor for hydrogen gas detection is presented, exhibiting a lower detection limit of 2000 ppm hydrogen in laboratory air. The sensor element is realized by micro-fabrication techniques on silicon wafers. The heated filament is exposed by a selective wet etching process creating a micro-hotplate on a thin membrane. In order to minimize power consumption, the sensor is operated in pulsed mode. Hydrogen gas detection was carried out using a synthetic gas testbench. Measurements of hydrogen contents ranging from 0% to 4% with an increment of 0.5% were successfully performed for ambient gas temperatures between -15°C and 84°C. Including humidity, high moisture contents have the greatest influence on thermal conductivity. This was predicted in theoretical investigations and confirmed in experiments. For evaluation, both the change in resistance ΔR as well as the time constant τ were taken as sensor output. For both quantities, the previously established theoretical relationship with thermal conductivity could be confirmed. Y1 - 2020 U6 - https://doi.org/10.1016/j.sna.2019.111670 VL - 305 IS - April PB - Elsevier ER - TY - CHAP A1 - Silberbauer, Theodor A1 - Lindner, Matthias A1 - Schreiner, Rupert T1 - Charakterisierung der dielektrischen Barrierenentladung von Mikroplasmaaktuatoren in Abhängigkeit der Substratdicke T2 - Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung : Fachbeiträge 2. Symposium Elektronik und Systemintegration ESI 2020 Y1 - 2020 UR - https://nbn-resolving.org/urn:nbn:de:bvb:860-opus4-2130 N1 - Die Fachtagung, geplant für den 01. April 2020 an der Hochschule Landshut, wurde aufgrund der Corona-Pandemie abgesagt, die eingereichten Fachbeiträge im Tagungsband 2. Symposium Elektronik und Systemintegration ESI 2020: "Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung" veröffentlicht. Hrsg.: Artem Ivanov, Marc Bicker und Peter Patzelt. Hochschule Landshut, 2020, ISBN 978-3-9818439-4-1. SP - 64 EP - 72 CY - Landshut ER - TY - JOUR A1 - Krysztof, Michał A1 - Miera, Paweł A1 - Urbański, Paweł A1 - Grzebyk, Tomasz A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Integrated silicon electron source for high vacuum microelectromechanical system devices JF - Journal of Vacuum Science & Technology B N2 - The article presents the process of developing a silicon electron source designed for high-vacuum microelectromechanical system (HV MEMS) devices, i.e., MEMS electron microscope and MEMS x-ray source. Technological constraints and issues of such an electron source are explained. The transition from emitters made of carbon nanotubes to emitters made of pure silicon is described. Overall, the final electron source consists of a silicon tip emitter and a silicon gate electrode integrated on the same glass substrate. The source generates an electron beam without any carbon nanotube coverage. It generates a high and stable electron current and works after the final bonding process of an HV MEMS device. KW - Materials Chemistry KW - Electrical and Electronic Engineering KW - Surfaces, Coatings and Films KW - Process Chemistry and Technology KW - Instrumentation KW - Electronic, Optical and Magnetic Materials Y1 - 2024 U6 - https://doi.org/10.1116/6.0003385 SN - 2166-2746 VL - 42 IS - 2 PB - AIP Publishing ER - TY - JOUR A1 - Schreiner, Rupert A1 - Naegele, Peter A1 - Körbl, M. A1 - Groning, A. A1 - Gentner, Jean-Louis A1 - Schweizer, Heinz C. T1 - Monolithically integrated tunable laterally coupled distributed-feedback lasers JF - Photonics Technology Letters N2 - A new method for fabrication of tunable InGaAsP-InP single-mode lasers without epitaxial overgrowth is reported. These devices show the advantage of a considerably simplified fabrication process compared to conventional tunable laser types. The lasers comprise an active Bragg reflector integrated with an uncorrugated separately pumped gain region. By adjusting the current through the Bragg reflector, the wavelength can be tuned between 1590.8 and 1595.2 nm. KW - Tunable circuits and devices KW - Optical coupling KW - Laser tuning KW - Etching KW - Pump lasers KW - Laser feedback KW - Optical device fabrication KW - Distributed feedback devices KW - Gratings KW - Fiber lasers Y1 - 2001 U6 - https://doi.org/10.1109/68.969880 VL - 13 IS - 12 SP - 1277 EP - 1279 PB - IEEE ER - TY - CHAP A1 - Buchner, Philipp A1 - Kaiser, Alexander A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Silicon Nanowire Field Emitters with Integrated Extraction Gates Using Benzocyclobutene as an Insulator T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - We are continuously improving the performance of our field emission electron sources. In this work a geometrically optimized design of electron sources with silicon nanowire field emitters on pillars was fabricated. This new design increased the packing density of the emitters by using a hexagonal arrangement of the pillars and a pillar spacing of 40 µm. Benzocyclobutene was used as the insulator material for an integrated (Cr/Ni) extraction gate. A modified fabrication process for the field emitters further improved reproducibility and reliability. An emission current of about 0.4 mA was measured for 30 minutes at an extraction voltage of 250 V and an anode voltage of 500 V. Electron transmission through the gate reached almost 100%. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652314 SP - 1 EP - 2 PB - IEEE ER - TY - JOUR A1 - Berndt, Dominik A1 - Muggli, Josef A1 - Heckel, Robert A1 - Rahiman, Mohd Fuad A1 - Lindner, Matthias A1 - Heinrich, Stephan A1 - Plöchinger, Heinz A1 - Schreiner, Rupert T1 - A Robust Miniaturized Gas Sensor for H₂ and CO₂ Detection Based on the 3ω Method JF - Sensors N2 - Gas concentration monitoring is essential in industrial or life science areas in order to address safety-relevant or process-related questions. Many of the sensors used in this context are based on the principle of thermal conductivity. The 3ω-method is a very accurate method to determine the thermal properties of materials. It has its origin in the thermal characterization of thin solid films. To date, there have been very few scientific investigations using this method to determine the thermal properties of gases and to apply it to gas measurement technology. In this article, we use two exemplary gases (H2 and CO2) for a systematical investigation of this method in the context of gas analysis. To perform our experiments, we use a robust, reliable sensing element that is already well established in vacuum measurement technology. This helix-shaped thin wire of tungsten exhibits high robustness against chemical and mechanical influences. Our setup features a compact measurement environment, where sensor operation and data acquisition are integrated into a single device. The experimental results show a good agreement with a simplified analytical model and FEM simulations. The sensor exhibits a lower detection limit of 0.62% in the case of CO2, and only 0.062% in case the of H2 at an excitation frequency of 1 Hz. This is one of the lowest values reported in literature for thermal conductivity H2 sensors. KW - 3ω-method KW - CO2 sensor KW - H2 sensor KW - thermal gas sensor Y1 - 2022 U6 - https://doi.org/10.3390/s22020485 N1 - Corresponding author: Dominik J. Berndt VL - 22 IS - 2 SP - 1 EP - 17 PB - MDPI CY - Basel ER - TY - JOUR A1 - Schreiner, Rupert A1 - Körbl, M. A1 - Gräbeldinger, H. A1 - Gentner, Jean-Louis A1 - Schweizer, H. T1 - Laterally gain-coupled 1.57 [micro sign]m DFB lasers with chromium surface grating and self-aligned Ti/Pt/Au ohmic contact JF - Electronics Letters N2 - A simple method for fabricating gain coupled DFB lasers with lateral surface chromium Bragg gratings and self-aligned low capacitance ohmic contacts is reported. These InGaAsP/InP lasers show monomode emission with a sidemode suppression ratio of 40 dB. For 243 µm long devices a continuous wave threshold current of 17 mA was measured at room temperature. KW - Bragg gratings KW - platinum KW - chromium KW - ohmic contacts KW - titanium KW - distributed feedback lasers KW - gold Y1 - 2000 U6 - https://doi.org/10.1049/el:20000500 SN - 0013-5194 VL - 36 IS - 7 SP - 636 EP - 637 PB - The Institution of Engineering and Technology, IET ER - TY - JOUR A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Dams, Florian T1 - Compact and Energy-Efficient Field Emission Cathodes for Sensor Applications JF - Advanced Materials Research N2 - We report on miniaturized silicon field emitter arrays for the application in compact and energy-saving vacuum-microelectronic devices, e.g. sensors or x-ray tubes. Since standard silicon semiconductor technology has been used for the fabrication, they may be easily integrated with other silicon based circuits and devices on the same chip. The silicon tip geometry and the operating conditions were optimized in order to obtain highly uniform and stable electron field emission from large area cathode arrays. A series of uniform hexagonal tip arrays containing each 547 tips were fabricated and characterized. The electron emission properties of both individual tips as well as of complete emitter arrays were investigated. A saturation level in the voltage-current characteristics was found, which can be explained by the limitation of the supply of electrons due to the p-type silicon wafer material. When operating the arrays in the current saturation regime at an emission current of ~ 1 nA per tip, a highly stable and low noise emission can be observed. KW - field emission KW - Si-Tip Cathodes KW - Vacuum Sensors Y1 - 2014 U6 - https://doi.org/10.4028/www.scientific.net/amr.1024.372 VL - 1024 SP - 372 EP - 375 PB - Scientific.net ER - TY - CHAP A1 - Hausladen, Matthias A1 - Bomke, Vitali A1 - Buchner, Philipp A1 - Bachmann, Michael A1 - Knapek, Alexandr A1 - Schreiner, Rupert T1 - Influence of Geometrical Arrangements of Si Tip Arrays Fabricated by Laser Micromachining on their Emission Behaviour T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - ensely packed emitters on a field emission array lead typically to mutual shielding. Taking biology as a role model for geometric arrangements could be a way to reduce this effect. For comparison, two electron sources, one with a spiral and a second with conventional rectangular (orthogonal) arranged emitters, were fabricated and investigated. Emission currents of 6 µA in the spiral ordered array and 120 µA in the rectangular array were reached with an extraction voltage of 400 V. From a mid-term measurement over 1 h a current stability of ±8.8 % (spiral) respectively ±5.7 % (rectangular) with a mean degradation of -3.0 µA/h (spiral) and -0.12 µA/h (rectangular) could be observed. KW - aperture field KW - emission grid KW - Fabrication KW - laser micromachining KW - parastichy tip arrangements KW - silicon field emission KW - Stability analysis KW - Spirals KW - Field emitter array KW - Voltage measurement Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600717 SN - 2380-6311 PB - IEEE CY - Piscataway, N.J. ER - TY - CHAP A1 - Buchner, Philipp A1 - Bomke, Vitali A1 - Hausladen, Matthias A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Investigation on the Emission Behaviour of p-doped Silicon Field Emission Arrays with Individually Controllable Single Tips T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 7/5/2021 - 7/9/2021, Lyon, France N2 - Four individually controllable emission tips consisting of <111> p-Type silicon, were structured on a glass substrate by laser ablation. A matching extraction grid was manufactured in the same manner and aligned with the emitters. The resulting samples were characterized in ultra-high vacuum. As expected, the individual currents show a strong saturation and in the saturation region a considerably lower current fluctuation than n-type silicon due to charge carrier depletion. The individual tips behave completely independent behaviour from each other and the overall emission can be deduced from the sum of the currents through the individual tips. Y1 - 2021 SN - 978-1-6654-2589-6 U6 - https://doi.org/10.1109/IVNC52431.2021.9600756 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Hecht, Fabian A1 - Bauereiβ, Florian A1 - Sellmair, Josef A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Electron Beam Induced Growth of Carbon Nanotips on Tungsten and Silicon Fieldemitters T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - In our experiments we grew electron emitting carbon nanostructures on tungsten tips. Subsequently, we transferred the growth process to pre-structured phosphorus-doped n-type silicon and obtained emitting carbon nanostructures directly grown on silicon. After growth of the nanostructures, the silicon field emitters showed increased emission currents of 76 nA at 1.1 kV (compared to 6 nA under the same conditions before growth). KW - Behavioral sciences KW - Nanostructures KW - Silicon KW - Carbon dioxide KW - Current measurement KW - Electron beams KW - Tungsten Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188960 SP - 160 EP - 162 PB - IEEE ER - TY - CHAP A1 - Allaham, Mohammad M. A1 - Buchner, Philipp A1 - Schreiner, Rupert A1 - Knápek, Alexandr T1 - Testing the performance of Murphy-Good plots when applied to current-voltage characteristics of Si field electron emission tips T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France N2 - Murphy-Good plots are the most recent type of the analysis methods in the field electron emission theory, this type of plots has several useful characteristics such as: having the very-nearly straight line to represent the current-voltage characteristics and the absence of the correction factors in the mathematical procedure of the analysis process. In this study, n-type <111> and <100> Si chips containing four individual emitters are used as base emitters and mounted in a diode configuration field emission setup where the experiments are operated in an ultra-high vacuum ( 10-7 Pa). Each chip has four individual controllable emitters with 5 µm distance between the Si tips and the same material grid. Laser micromachining and subsequent wet chemical etching technique is used to structure and polish the tips. Murphy-Good plots are used to study the behavior of the Si individual tips and compare the results with the array current by extracting the field emission characterization parameters of the emitters. KW - characterization parameter KW - Current-voltage characteristics KW - electron emission KW - electron source KW - Limiting KW - Micromachining KW - Murphy-Good plot KW - n-type Si chip KW - RESISTANCE KW - safety KW - silicon Y1 - 2021 U6 - https://doi.org/10.1109/IVNC52431.2021.9600690 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Zheng, Jihong A1 - Fuhrmann, Thomas A1 - Xu, Boqing A1 - Schreiner, Rupert A1 - Jia, Hongzhi A1 - Zhang, Wei A1 - Wang, Ning A1 - Seebauer, Gudrun A1 - Zhu, Jiyan T1 - Curriculum design and German student exchange for Sino-German Bachelor program majored in optoelectronics engineering T2 - 14th Conference on Education and Training in Optics and Photonics (ETOP 2017), 29-31.05.2017, Hangzhou, China, 29-31.05.2017 N2 - Different higher education backgrounds in China and Germany led to challenges in the curriculum design at the beginning of our cooperative bachelor program in Optoelectronics Engineering. We see challenges in different subject requirements from both sides and in the German language requirements for Chinese students. The curriculum was optimized according to the AS IIN criteria, which makes it acceptable and und erstandable by both countries. German students are integrated into the Chinese class and get the sa me lectures like their Chinese colleagues. Intercultural and curriculum challenges are successfully solved. The results are summarized to provide an example for other similar international programs. KW - cooperative bachelor program KW - optoelectronics KW - microsystems KW - student exchange Y1 - 2017 U6 - https://doi.org/10.1117/12.2269574 PB - SPIE ER - TY - CHAP A1 - Bieker, Johannes A1 - Roustaie, Farough A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Schlaak, Helmut F. T1 - Innovatives Verfahren zur Herstellung und Integration metallischer Nanokonen für die Feldemission T2 - MikroSystemTechnik Kongress 2017 : MEMS, Mikroelektronik, Systeme 23.-25. Oktober 2017 in München N2 - In den letzten Jahren wurde am Institut für Elektromechanische Konstruktionen die Fabrikation und Integration von metallischen Nanodrähten und Nanokonen mittels Template-basierter Abscheidung erforscht. Diese Variante der in-situ Abscheidung von metallischen Nanostrukturen bietet eine Vielzahl von Anwendungsmöglichkeiten. Im Rahmen dieses Beitrags werden das Herstellungsverfahren zur Herstellung metallischer Nanokonen vorgestellt. Dies beinhaltet sowohl die Templatepräparation mittels asymmetrischen Ätzens als auch die anschließende Integration mittels galvanischer Abscheidung. Eine Anwendung der metallischen Nanokonen stellt die Verwendung als Feldemitter in der Vakuumelektronik dar. Es werden erste Messungen der Langzeitstabilität des Feldemissionsstromes der metallischen Konen präsentiert. N2 - Recently the fabrication and integration of metallic nanowires and nanocones based on ion-track etched templates has been in the focus of research at the Institute for Electromechanical Design at the TU Darmstadt. Using the method for the in-situ deposition various applications are feasible. In this paper we present the fabrication method for in-situ deposition of metallic nanocones, including the preparation of the polymer templates based on asymmetric etching and the process description for integration via electrodeposition. Giving one example for an application, the metallic nanocones can be used as field emitters in vacuum electronics. The field emission properties will be presented briefly. T2 - Innovative fabrication method for in-situ deposition of metallic nanocones for field emission KW - Ätzen KW - Feldemission KW - galvanische Abscheidung KW - Herstellverfahren KW - Langzeitstabilität KW - Nanodraht KW - Nanostruktur KW - Polymer KW - Prozessbeschreibung KW - Vakuum Y1 - 2017 SN - 978-3-8007-4491-6 IS - CD-ROM SP - 797 EP - 800 PB - VDE-Verlag CY - München ER - TY - CHAP A1 - Rahiman, Mohd Fuad A1 - Berndt, Dominik A1 - Schreiner, Rupert T1 - Micro-wire Pirani with temperature-stabilized Environment T2 - 3. Symposium Elektronik und Systemintegration ESI 2022: 06. April 2022, Hochschule Landshut Y1 - 2022 SN - 978-3-9818439-7-2 SP - 52 EP - 59 ER - TY - GEN A1 - Schreiner, Rupert T1 - Miniaturized sensor and actuator elements based on the heat transport in gases or the ionization of gas particles T2 - 16th International Conference on Optical and Electronic Sensors, COE'2020, 29 March - 2 April 2020, Krakow, Poland (online) Y1 - 2021 ER - TY - CHAP A1 - Kleshch, Victor I. A1 - Serbun, Pavel A1 - Orekhov, Anton A1 - Lützenkirchen-Hecht, Dirk A1 - Obraztsov, Alexander N. A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Lutzenkirchen-Hecht, Dirk T1 - Field emission properties of p-type silicon tips decorated with tungsten nanoparticles T2 - 2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany N2 - An array of conical-shaped p-type silicon tips was fabricated by using reactive ion etching and sharpening oxidation. The apex of each tip was decorated by a tungsten hemispherical nanoparticle. Field emission properties of the tips were measured by a tungsten-needle anode positioned above the tip apex. Tips decorated with tungsten nanoparticles demonstrated a smaller saturation region in current-voltage characteristics compared to the pristine tips. An emission activation process, which consisted in sudden current increase at certain value of applied voltage, was observed for the decorated silicon tips. This behavior was explained by the formation of vertical protrusions extending from the metal particles revealed by scanning electron microscopy after field emission experiments. KW - Current measurement KW - field emission KW - Ions KW - Iron KW - metal nanoparticles KW - nanoparticles KW - p-type silicon KW - Scanning electron microscopy KW - silicon KW - Tungsten Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051580 SP - 138 EP - 139 PB - IEEE ER - TY - CHAP A1 - Wick, Michael A1 - Lindner, Gerhard A1 - Zimmer, Katja A1 - Schreiner, Rupert A1 - Fuhrmann, Thomas A1 - Seebauer, Gudrun A1 - Xu, Boqing A1 - Zheng, Jihong A1 - Wang, Ning ED - Liu, Xu ED - Zhang, Xi-Cheng T1 - German-Chinese cooperative Bachelor in engineering physics/optoelectronics T2 - 14th Conference on Education and Training in Optics and Photonics: ETOP 2017; Hangzhou, China 29.05.2017 - 31.05.2017 N2 - The University of Shanghai for Science and Technology (USST), the Coburg University of Applied Sciences and Arts (CUASA) and the OTH Regensburg, University of Applied Sciences (OTHR) established an English taught international cooperative bachelor program in the area of Engineering Physics/Optoelectronics. Students from China study their first four semesters at USST. They continue their studies in Germany for the last three semesters, including an internship and a bachelor thesis, graduating with a Chinese and a German bachelor degree. Students from Germany study their third and fourth semester at USST to gain international experience. While the first cohort of Chinese students is currently in Germany, the second cohort of German students is in Shanghai. Up to now the feedback regarding this study program is completely positive, thus it is planned to develop it further. Y1 - 2017 SN - 9781510613812 U6 - https://doi.org/10.1117/12.2269943 PB - SPIE ER - TY - CHAP A1 - Knapp, Wolfram A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Lindner, Matthias A1 - Schreiner, Rupert T1 - Investigations of the transition from field electron emission to stable plasma discharge in a micro electron source at vacuum pressure T2 - 2017 30th International Vacuum Nanoelectronics Conference (IVNC), 10-14 July 2017, Regensburg, Germany N2 - We report on the transition from field electron emission to plasma discharges. During an experiment with a miniaturized field emission electron source a plasma discharge accompanied by a luminous effect was observed. A novel graphical evaluation method was used to interpret and to compare the observed phenomenon. KW - CATHODES KW - Discharges (electric) KW - electron source KW - electron sources KW - Fault location KW - field emission KW - field emission measurement KW - glow discharge KW - Glow discharges KW - micro arc KW - plasma discharge KW - Plasmas KW - Si-tip cathode Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051594 SP - 166 EP - 167 PB - IEEE ER -