TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Ławrowski, Robert Damian T1 - Gated p-Si field emitter arrays for sensor applications T2 - 2015 28th International Vacuum Nanoelectronics Conference (IVNC) N2 - We report on gated p-type Si-tip array cathodes for implementation into field emission electron sources for sensor applications. Arrays of 16 and 100 tips with tip heights of 3 μm and tip radii below 30 nm with integrated gate electrodes concentrically positioned 2 μm below the tip apexes were fabricated using an improved process, which leads to an enhanced isolation layer quality with sufficient breakdown field strengths and low leakage currents. Integral measurements with a fixed grid potential of 400 V showed emission currents up to 35 μA for 100 tips at a cathode voltage of 150 V and an almost negligible parasitic gate current. The array with 16 p-type Si-tips showed a significant stabilization of the emission current in the range of 0.3 - 0.4 μA, for cathode voltages between 90 V and 150 V. The current fluctuation in this saturation regime was measured for 10 minutes and a value of less than ± 1% was observed. No degradation of the cathode was found after 6 hours of operation at a constant cathode voltage of 100 V and a constant grid voltage of 400 V. KW - CATHODES KW - Current measurement KW - Current stabilization KW - field emission KW - integrated gate-electrode KW - Iron KW - Logic gates KW - semiconductor KW - Semiconductor device measurement KW - silicon KW - silicon tip array Y1 - 2015 U6 - https://doi.org/10.1109/IVNC.2015.7225567 SP - 164 EP - 165 PB - IEEE ER - TY - JOUR A1 - Mauerer, Wolfgang A1 - Rexhepaj, Tanja A1 - Monkman, Gareth J. A1 - Sindersberger, Dirk A1 - Diermeier, Andreas A1 - Neidhart, Thomas A1 - Wolfrum, Dominik A1 - Sterner, Michael A1 - Heberl, Michael A1 - Nusko, Robert A1 - Maier, Georg A1 - Nagl, Klaus A1 - Reuter, Monika A1 - Hofrichter, Andreas A1 - Lex, Thomas A1 - Lesch, Florian A1 - Kieninger, Bärbel A1 - Szalo, Alexander Eduard A1 - Zehner, Alexander A1 - Palm, Christoph A1 - Joblin, Mitchell A1 - Apel, Sven A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Westner, Markus A1 - Strasser, Artur A1 - Munndi, Maximilian A1 - Ebner, Lena A1 - Elsner, Michael A1 - Weiß, Nils A1 - Segerer, Matthias A1 - Hackenberg, Rudolf A1 - Steger, Sebastian A1 - Schmailzl, Anton A1 - Dostalek, Michael A1 - Armbruster, Dominik A1 - Koch, Fabian A1 - Hierl, Stefan A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Briem, Ulrich A1 - Diermeier, Andreas A1 - Spreitzer, Stefan A1 - Beiderbeck, Sabrina A1 - Hook, Christian A1 - Zobel, Martin A1 - Weber, Tim A1 - Groß, Simon A1 - Penzkofer, Rainer A1 - Dendorfer, Sebastian A1 - Schillitz, Ingo A1 - Bauer, Thomas A1 - Rudolph, Clarissa A1 - Schmidt, Katja A1 - Liebetruth, Thomas A1 - Hamer, Markus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Weber, Karsten A1 - Saßmannshausen, Sean Patrick A1 - Books, Sebastian A1 - Neuleitner, Nikolaus A1 - Rechenauer, Christian A1 - Steffens, Oliver A1 - Kusterle, Wolfgang A1 - Gömmel, Roland A1 - Wellnitz, Felix A1 - Stierstorfer, Johannes A1 - Stadler, Dominik A1 - Hofmann, Matthias J. A1 - Motschmann, Hubert A1 - Shamonin (Chamonine), Mikhail A1 - Bleicher, Veronika A1 - Fischer, Sebastian A1 - Hackenberg, Rudolf A1 - Horn, Anton A1 - Kawasch, Raphael A1 - Petzenhauser, Michael A1 - Probst, Tobias A1 - Udalzow, Anton A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian ED - Baier, Wolfgang T1 - Forschungsbericht 2016 T3 - Forschungsberichte der OTH Regensburg - 2016 Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13840 CY - Regensburg ER - TY - JOUR A1 - Beimler, Josef A1 - Leißl, Caroline A1 - Ebner, Lena A1 - Elsner, Michael A1 - Mühlbauer, Gerhard A1 - Kohlert, Dieter A1 - Schubert, Martin J. W. A1 - Weiß, Andreas P. A1 - Sterner, Michael A1 - Raith, Thomas A1 - Afranseder, Martin A1 - Krapf, Tobias A1 - Mottok, Jürgen A1 - Siemers, Christian A1 - Großmann, Benjamin A1 - Höcherl, Johannes A1 - Schlegl, Thomas A1 - Schneider, Ralph A1 - Milaev, Johannes A1 - Rampelt, Christina A1 - Roduner, Christian A1 - Glowa, Christoph A1 - Bachl, Christoph A1 - Schliekmann, Claus A1 - Gnan, Alfons A1 - Grill, Martin A1 - Ruhland, Karl A1 - Piehler, Thomas A1 - Friers, Daniel A1 - Wels, Harald A1 - Pflug, Kenny A1 - Kucera, Markus A1 - Waas, Thomas A1 - Schlachetzki, Felix A1 - Boy, Sandra A1 - Pemmerl, Josef A1 - Leis, Alexander A1 - Welsch, Andreas F.X. A1 - Graf, Franz A1 - Zenger, Gerhard A1 - Volbert, Klaus A1 - Waas, Thomas A1 - Scherzinger, Stefanie A1 - Klettke, Meike A1 - Störl, Uta A1 - Heyl, C. A1 - Boldenko, A. A1 - Monkman, Gareth J. A1 - Kujat, Richard A1 - Briem, Ulrich A1 - Hierl, Stefan A1 - Talbot, Sebastian A1 - Schmailzl, Anton A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Valentino, Piergiorgio A1 - Romano, Marco A1 - Ehrlich, Ingo A1 - Furgiuele, Franco A1 - Gebbeken, Norbert A1 - Eisenried, Michael A1 - Jungbauer, Bastian A1 - Hutterer, Albert A1 - Bauhuber, Michael A1 - Mikrievskij, Andreas A1 - Argauer, Monika A1 - Hummel, Helmut A1 - Lechner, Alfred A1 - Liebetruth, Thomas A1 - Schumm, Michael A1 - Joseph, Saskia A1 - Reschke, Michael A1 - Soska, Alexander A1 - Schroll-Decker, Irmgard A1 - Putzer, Michael A1 - Rasmussen, John A1 - Dendorfer, Sebastian A1 - Weber, Tim A1 - Al-Munajjed, Amir Andreas A1 - Verkerke, Gijsbertus Jacob A1 - Renkawitz, Tobias A1 - Haug, Sonja A1 - Rudolph, Clarissa A1 - Zeitler, Annika A1 - Schaubeck, Simon A1 - Steffens, Oliver A1 - Rechenauer, Christian A1 - Schulz-Brize, Thekla A1 - Fleischmann, Florian A1 - Kusterle, Wolfgang A1 - Beer, Anne A1 - Wagner, Bernd A1 - Neidhart, Thomas ED - Baier, Wolfgang T1 - Forschungsbericht 2013 T3 - Forschungsberichte der OTH Regensburg - 2013 Y1 - 2014 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7990 CY - Regensburg ER - TY - JOUR A1 - Lautenschläger, Toni A1 - Leis, Alexander A1 - Dendorfer, Sebastian A1 - Palm, Christoph A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Dams, Florian A1 - Bornmann, Benjamin A1 - Navitski, Aliaksandr A1 - Serbun, Pavel A1 - Müller, Günter A1 - Liebetruth, Thomas A1 - Kohlert, Dieter A1 - Pernsteiner, Jochen A1 - Schreier, Franz A1 - Heerklotz, Sabrina A1 - Heerklotz, Allwin A1 - Boos, Alexander A1 - Herwald, Dominik A1 - Monkman, Gareth J. A1 - Treiber, Daniel A1 - Mayer, Matthias A1 - Hörner, Eva A1 - Bentz, Alexander A1 - Shamonin (Chamonine), Mikhail A1 - Johansen, Søren Peter A1 - Reichel, Marco A1 - Stoll, Andrea A1 - Briem, Ulrich A1 - Dullien, Silvia A1 - Renkawitz, Tobias A1 - Weber, Tim A1 - Dendorfer, Sebastian A1 - Grifka, Joachim A1 - Penzkofer, Rainer A1 - Barnsteiner, K. A1 - Jovanovik, M. A1 - Wernecke, P. A1 - Vögele, A. A1 - Bachmann, T. A1 - Plötz, Martin A1 - Schliekmann, Claus A1 - Wels, Harald A1 - Helmberger, Paul A1 - Kaspar, Marcel A1 - Hönicka, M. A1 - Schrammel, Siegfried A1 - Enser, Markus A1 - Schmidmeier, Monika A1 - Schroll-Decker, Irmgard A1 - Haug, Sonja A1 - Gelfert, Verena A1 - Vernim, Matthias ED - Baier, Wolfgang T1 - Forschungsbericht 2012 T3 - Forschungsberichte der OTH Regensburg - 2012 Y1 - 2012 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7834 CY - Regensburg ER - TY - JOUR A1 - Appelhans, Marie-Luise A1 - Kampmann, Matthias A1 - Mottok, Jürgen A1 - Riederer, Michael A1 - Nagl, Klaus A1 - Steffens, Oliver A1 - Dünnweber, Jan A1 - Wildgruber, Markus A1 - Roth, Julius A1 - Stadler, Timo A1 - Palm, Christoph A1 - Weiß, Martin Georg A1 - Rochholz, Sandra A1 - Bierl, Rudolf A1 - Gschossmann, Andreas A1 - Haug, Sonja A1 - Schmidbauer, Simon A1 - Koch, Anna A1 - Westner, Markus A1 - Bary, Benedikt von A1 - Ellermeier, Andreas A1 - Vögele, Daniel A1 - Maiwald, Frederik A1 - Hierl, Stefan A1 - Schlamp, Matthias A1 - Ehrlich, Ingo A1 - Siegl, Marco A1 - Hüntelmann, Sven A1 - Wildfeuer, Matthias A1 - Brückl, Oliver A1 - Sterner, Michael A1 - Hofrichter, Andreas A1 - Eckert, Fabian A1 - Bauer, Franz A1 - Dawoud, Belal A1 - Rabl, Hans-Peter A1 - Gamisch, Bernd A1 - Schmidt, Ottfried A1 - Heberl, Michael A1 - Thema, Martin A1 - Mayer, Ulrike A1 - Eller, Johannes A1 - Sippenauer, Thomas A1 - Adelt, Christian A1 - Haslbeck, Matthias A1 - Vogl, Bettina A1 - Mauerer, Wolfgang A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Sax, Irmengard A1 - Gabor, Thomas A1 - Feld, Sebastian A1 - Linnhoff-Popien, Claudia A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Schreiner, Rupert A1 - Sellmair, Josef ED - Baier, Wolfgang T1 - Forschung 2019 BT - Thema: Künstliche Intelligenz N2 - Bericht mit Forschungsprojekten aus verschiedenen Bereichen der OTH Regensburg mit dem Schwerpunktthema "Künstliche Intelligenz" und einem Gespräch zur "Medizin der Zukunft" T3 - Forschungsberichte der OTH Regensburg - 2019 KW - Forschung KW - Forschungsbericht KW - Künstliche Intelligenz Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-7890 SN - 978-3-9818209-7-3 CY - Regensburg ER - TY - JOUR A1 - Prommesberger, Christian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Schreiner, Rupert T1 - Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes JF - IEEE Transactions on Electron Devices N2 - We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63% was achieved. KW - Cathodes KW - Nanostructured devices KW - Current measurement KW - Photonics KW - Electron sources KW - Emissions KW - Voltage measurement Y1 - 2017 U6 - https://doi.org/10.1109/TED.2017.2763239 SN - 5128-5133 VL - 64 IS - 12 PB - IEEE ER - TY - JOUR A1 - Langer, Christoph A1 - Bomke, Vitali A1 - Hausladen, Matthias A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Silicon Chip Field Emission Electron Source Fabricated by Laser Micromachining JF - Journal of Vacuum Science & Technology B N2 - The components for a silicon chip electron source were fabricated by laser micromachining using pulsed laser ablation and wet chemical cleaning and etching dips. The field emission electron source consists of a silicon field emission cathode with 4 × 4 conical shaped emitters with a height of 250 μm and a tip radius of about 50 nm, a 50 μm thick laser-structured mica spacer, and a silicon grid electrode with a grid periodicity of 200 μm and a bar width of 50 μm. These three components are combined to a single chip with the size of 14 × 10 mm2 and the thickness of 1 mm to form the electron source. Several of these devices were characterized in ultrahigh vacuum. Onset voltages of about 165 V and cathode currents of about 15 μA for voltages lower than 350 V were observed. Operating the electron source with an anode voltage of 500 V and an extraction grid voltage of 300 V yielded a cathode current of 4.5 μA ± 8.9%, an anode current of 4.0 μA ± 9.6%, and a corresponding grid transmittance of 89%. Regulating the anode current by the extraction grid voltage, an extremely stable anode current of 5.0 μA ± 0.017% was observed. A long-term measurement over 120 h was performed, and no significant degradation or failure was observed. KW - Ultra-high vacuum KW - Field emitter arrays KW - Etching KW - Electrical properties and parameters KW - Electron sources KW - Laser ablation KW - Laser micromachining KW - Silicon chip KW - Triodes Y1 - 2020 U6 - https://doi.org/10.1116/1.5134872 VL - 38 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Breuer, Janis A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk T1 - Extraction of the current distribution out of saturated integral measurement data of p-type silicon field emitter arrays JF - Journal of Vacuum Science and Technology B N2 - At the moment, only complicated techniques are known for the determination of array properties of field emitter arrays such as the number of active tips, the current distribution, or the individual tip radii. In this work, a method for extracting these parameters from integral measurement data is presented. A model describing the characteristics of a single emitter, including the saturation as a function of the applied voltage and the emitter radius, is developed. It is shown that experimental data of field emitter arrays can be represented as the sum of these functions and the characteristic parameters can be fitted to field emission data of an array. Using this method, the values of the radii as well as the parameters of distribution models can be determined directly. Analysis of experimental data from p-type Si emitter arrays shows that only 1–2% of the tips contribute significantly. Y1 - 2018 U6 - https://doi.org/10.1116/1.5035189 VL - 36 IS - 5 PB - AIP Publishing ER - TY - JOUR A1 - Edler, Simon A1 - Bachmann, Michael A1 - Breuer, Janis A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Jakšič, Jasna A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup JF - Journal of Applied Physics N2 - In the present work, black-silicon field emitter arrays (FEAs) are investigated regarding the influence of residual gas pressure on the characteristics and lifetime in the high voltage triode setup. Current-voltage-characteristics at different pressure levels are recorded and show a decreasing emission current with rising pressure. This decrease can be explained by an increase of the work function and charging of the emitter surface caused by adsorbates. The emission current can be restored to its initial value by heating of the FEA up to 110 °C during active emission. With this regeneration procedure, an extended lifetime from about 20 h to 440 h at a residual gas pressure of 10−5 mbar is achieved. Y1 - 2017 U6 - https://doi.org/10.1063/1.4987134 VL - 122 ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Bachmann, Michael A1 - Pahlke, Andreas T1 - Field emission properties of p-type black silicon on pillar structures JF - Journal of Vacuum Science & Technology B N2 - Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm. Y1 - 2016 U6 - https://doi.org/10.1116/1.4943919 VL - 34 IS - 2 ER - TY - JOUR A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Extraction of the characteristics of current-limiting elements from field emission measurement data JF - Journal of Vacuum Science & Technology B N2 - In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes. Y1 - 2017 U6 - https://doi.org/10.1116/1.4971768 VL - 35 IS - 2 ER - TY - CHAP A1 - Langer, Christoph A1 - Hausladen, Matthias A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Shamonin (Chamonine), Mikhail A1 - Schreiner, Rupert T1 - Field emission current investigation of p-type and metallized silicon emitters in the frequency domain T2 - International Vacuum Nanoelectronics Conference (IVNC), 31st, 2018, Kyoto, Japan N2 - We investigated two different field emitter arrays consisting of 10×10 p-type and 10×10 undoped Au-coated high aspect ratio silicon tips. The I-V characterization of the p-type sample showed a pronounced saturation for voltages higher than 500 V and a maximum emission current of 39 nA. The metallized sample revealed a FN-like emission up to several μA. The metallized and the p-type sample operating below the saturation region showed high current fluctuations of ±16%. Whereas, the metallized sample with current regulation and the p-type sample in the saturation yielded a current stability of ±0.4% and ±0.3%, respectively. Investigations in the frequency domain revealed the for field emission typical 1/f-noise. By operating in the saturation region (p-type sample) or using an emission current regulation (metallized sample) the noise level was reduced by at least 20 dB. Finally, the p-type sample was illuminated by a light emitting diode to increase and modulate the emission current in the saturation region. The emission current was increased by a factor of 3.7 to 145 nA. With this configuration we emulated an unstable emission behavior and evaluated the performance of our emission current regulation circuit. KW - field emission KW - field emitter array KW - silicon tip KW - current fluctuation KW - current stability KW - field emission noise Y1 - 2018 U6 - https://doi.org/10.1109/IVNC.2018.8520127 PB - IEEE ER - TY - JOUR A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Investigations on the long-term performance of gated p-type silicon tip arrays with reproducible and stable field emission behavior JF - Journal of Vacuum Science & Technology B N2 - The authors report on the fabrication and characterization of p-type Si tip arrays with an integrated gate electrode for applications as field emission electron sources. After the reactive ion etching of the emitters, the combined thermal dry and wet oxidation was used for both the sharpening of the emitters and for the realization of an enhanced insulation layer. Au was evaporated in a self-aligned process as gate electrode. Arrays of 16 Si tips were fabricated with tip heights of about 3 μm and tip radii of about 20 nm with integrated gate electrode concentrically positioned ≈2 μm below the tip apex. Integral measurements with an additional anode showed improved field emission properties with a reproducible and stable emission behavior. A fast activation of the tips, low onset voltages of about 30 V, and moderate field emission currents up to 0.55 μA were noticed. The field emission parameters were calculated using the Fowler–Nordheim characteristics. A pronounced saturation regime was observed, and current fluctuations of less than ±1% were investigated for 30 min. Long-term measurements were carried out for a period of more than 8 h. In the first 6 h of operation, the authors observed a drift of the emission current from 0.35 to 0.55 μA caused by an increased emission surface. Y1 - 2017 U6 - https://doi.org/10.1116/1.4972519 VL - 35 IS - 1 ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Individually Addressable Fully Integrated Field Emission Electron Source Fabricated by Laser Micromachining of Silicon T2 - 33rd International Vacuum Nanoelectronics Conference (IVNC): 6-10 July 2020, Lyon N2 - A cathode with individually addressable Si tips allows the observation of the activation procedure and emission behaviour of each field emission emitter at any time of the measurement. The cathode consists of an array of 2x2 conically shaped emitter structures, which were fabricated by laser micromachining and wet etching of a Si substrate bonded on a glass carrier. Using the same process, a Si extractions grid was fabricated and mounted onto the emitter. Integral field emission measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10- 9 mbar. The emitters show an onset voltage between 200 V and 300 V. The emission current for each emitter on the cathode was regulated to a given value (1.0 μA, 2.5μA, 5.0μA) by an external regulating circuit and was recorded individually during the measurement. With such approach, the relation between the emission behaviour and the geometry of emitters can be studied in detail. In addition, the current stabilization of each emitters of an array can be investigated, which led to a current stability of better than 0.5%. Y1 - 2020 SN - 978-1-7281-9454-7 U6 - https://doi.org/10.1109/IVNC49440.2020.9203470 SP - 1 EP - 2 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Mecani, Mirgen A1 - Huang, Yifeng A1 - She, Juncong A1 - Schreiner, Rupert ED - Tiginyanu (Ed.), Ion M. T1 - Field emission properties of ring-shaped Si ridges with DLC coating T2 - Proc. SPIE 10248, Nanotechnology VIII, 102480H (30 May 2017) N2 - We report on the fabrication and the emission characterization of single ring-shaped Si ridges with a coating of diamond-like carbon (DLC). The reactive ion etching and the subsequent inductively coupled plasma step were adjusted to realize ring-shaped Si ridges with a height of 7.5 μm respectively 15 μm and an apex radius of 20 – 25 nm. The samples were coated with a DLC layer (thickness ≈ 2 – 5 nm) by a filtered cathodic vacuum arc deposition system in order to lower the work function of the emitter and to improve the field emission characteristics. The field emission characterizations were done in diode configuration with cathode and anode separated by a 50 μm thick mica spacer. A higher emission current was carried out for the ring-shaped Si ridge in comparison to the point-shaped Si tips due to the increased emission area. The highest emission current of 0.22 μA at 1000 V was measured on a DLC-coated sample with the highest aspect ratio. No degradation of the emission current was observed in the plateau regime during a measurement period of 6 h. Finally, no decreasing performance of the field emission properties was found due to changes in the geometry or destructions. KW - Etching KW - Scanning electron microscopy KW - Silicon carbide KW - Carbon KW - Mica KW - Oxides Y1 - 2017 U6 - https://doi.org/10.1117/12.2265627 VL - 102480H PB - Society of Photo-Optical Instrumentation Engineers (SPIE) ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Field emission from three-dimensional epitaxial grown GaN-microrods T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - A novel three-dimensional epitaxial technique allows on patterned substrates the realization of gallium nitride pillars, also known as nano- and microrods. The typical dimensions of the microrods are in the range of one micron for the radius of the hexagonal footprint and about 10 μm in height. The microrods consist of a semiconductor heterostructure with an n GaN core, a n-GaN shell, a p GaN shell and an intermediate quantum well layer. The field emission properties were investigated in diode configuration by integral field emission measurements in a vacuum chamber at pressures around 10 -9 mbar. The spacer was mica with a thickness of 50 μm. A metallized fine-meshed nitride grid (or a metallized Si-grid) was used as anode. A current of about 1 μA at a voltage of 1250 V (1750 V) was measured. An onset field of about 12.5 MV/m (20 MV/m) and field enhancement factors in the range of 200 to 500 (150 to 300) were found. The investigation with the fine-meshed grid showed an expected pronounced saturation region. KW - field emission KW - GaN KW - LED Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551477 SN - 2380-6311 SP - 87 EP - 88 PB - IEEE ER - TY - CHAP A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Field emission from black silicon structures with integrated gate electrode T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - Black silicon structures with integrated gate electrode were realized by using an improved fabrication process. An enhanced insulation layer was achieved by a combination of dry and wet oxidation, and a gold layer was evaporated as gate electrode. The black silicon structures were prepared with a RIE/ICP etching process at room temperature. Arrays of 16 and 100 apertures with buried p-doped black silicon whiskers have been fabricated. These structures have an emitter height of approximately 1.5 μm with tip radii between 5 nm and 30 nm. The whiskers are surrounded by the gate electrode in a distance of 1.5 μm. Integral field emission measurements yielded an onset voltage of 92 V for 16 apertures and 60 V for 100 apertures for an emission current of 1 nA. Maximum emission currents up to 0.2 μA were observed for the array with 100 apertures at a cathode voltage of 200 V. Stability measurements showed a current fluctuation of ± 21% at a mean value of the emission current of 12 nA over a period of 30 minutes for 16 apertures with b-Si whiskers. KW - field emission KW - black silicon KW - integrated gate electrode Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551532 SN - 2380-6311 SP - 219 EP - 220 PB - IEEE ER - TY - CHAP A1 - Ławrowski, Robert Damian A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Microrods and microlines by three-dimensional epitaxially grown GaN for field emission cathodes T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - The three-dimensional epitaxial technique allows the realization of gallium nitride lines in addition to the rods. To optimize the properties of GaN-based field emission cathodes further investigations and an improvement of the epitaxial process were performed. The microrods and microlines consist of a one-order higher n-doped gallium nitride in comparison to the gallium nitride layer on the sapphire substrate. The typical height of the microrods and -lines is about 5 μm. The field emission properties of these structures were investigated in diode configuration by integral field emission measurements at pressures below 10 -9 mbar. For the microrods (microlines) a voltage of 1100 V (2000 V) was measured for a field emission current of about 0.5 μA with an onset field of about 12 MV/m (24 MV/m). Furthermore, the field enhancement factors for microrods and -lines are in the range of 300 and 200, respectively. KW - field emission KW - GaN KW - LED KW - Gallium nitride KW - Epitaxial growth Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051576 SP - 130 EP - 131 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Extraction of the characteristics of limiting elements from field emission measurement data T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - In this contribution we will present an algorithm to extract the characteristics of non-Fowler-Nordheim (FN) circuit elements from saturation limited field emission (FE) measurement data. The method for calculating the voltage drop on limiting circuit elements is based on circuit theory as well as Newton's method. Since no assumption on the limiting circuit is made, this method is applicable to any FE data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters are fully taken into account throughout the algorithm. External serial resistors and a limiting p-doped substrate are analyzed, where the latter shows a diode-like behavior. Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551474 SN - 2380-6311 SP - 81 EP - 82 PB - IEEE ER - TY - CHAP A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Huang, Yifeng A1 - She, Juncong T1 - Gated p-Si field emission cathode applied in an ionization vacuum gauge T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - A commercial Bayard-Alpert ionization vacuum gauge was equipped with a field emission electron source based on a cathode consisting of an array of 16 gated, p-doped, and DLC-coated Si-tips and characterized. An anode current of about 1.3 μA led to an ion current of 7 fA at 3×10 -7 mbar and 0.8 pA at 4×10 -5 mbar. Whereas at pressures higher than 4×10 -5 mbar the emission current of the electron source decreased, the ratio of ion and anode current remained linear. A nearly constant sensitivity of ~ 17 mbar -1 of the ionization vacuum gauge within the investigated pressure range was depicted. KW - field emission KW - field emitter array KW - Si KW - DLC KW - electron source KW - ionization vacuum gauge Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551500 SN - 2380-6311 SP - 145 EP - 146 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Control of the electron source current T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015% is observed. However, the achievable stability of the transmitted electron current is limited due to a variation of the extraction grid current ratio showing a standard deviation of 4.33%. By regulating the difference of the emission current and the extraction grid current an improved stability of the transmitted electron current down to a standard deviation of 0.280% is observed. Even with operation at 2 × 10 -5 mbar a standard deviation of 0.558% is achieved. KW - Standards KW - Circuit stability KW - Power system stability KW - Current measurement KW - Voltage measurement KW - Electron sources KW - Stability analysis Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051550 SP - 66 EP - 67 PB - IEEE ER -