TY - CHAP A1 - Serbun, Pavel A1 - Navitski, Aliaksandr A1 - Müller, Güntner A1 - Schreiner, Rupert A1 - Prommesberger, Christian A1 - Langer, Christoph A1 - Dams, Florian T1 - Scaling of the field emission current from B-doped Si-tip arrays T2 - 25th International Vacuum Nanoelectronics Conference (IVNC) ; Jeju, Korea (South), 09.07.2012 - 13.07.2012 N2 - We have fabricated a test chip with various hexagonal arrays of B-doped Si tips (height ~ 3 μm, apex radius <; 30 nm, number 1-4447, resistivity 4 Ωcm, 100 orientation) in triangular arrangement (pitch 10 μm, density 1.16×10 6 cm -2 ) in order to systematically investigate the field emission current scaling with the number N of tips. Regulated voltage scans for 1 nA revealed rather efficient emission from nearly all tips of the arrays at an average field of 15 V/μm. The expected current plateau was always obtained at fields around 20 V/μm, but its width strongly increased with N. In this carrier depletion range, the single tip provided a much higher stability (<; 5%) of the current (2-3 nA) than at lower (>; 50 %) and higher currents (>; 30%). Integral current measurements of the hexagonal arrays resulted in a statistically improved current stability (<; 1%) but only a weak increase of the total current with N 0.28 yet. These results will be discussed with respect to the remaining inhomogeneity of the tips. KW - Anodes KW - B-doped KW - boron KW - Current measurement KW - current scaling KW - electron field emission KW - elemental semiconductors KW - field emitter arrays KW - Iron KW - Nonhomogeneous media KW - silicon KW - Voltage control Y1 - 2012 SN - 978-1-4673-1984-3 SN - 978-1-4673-1983-6 SN - 978-1-4673-1982-9 U6 - https://doi.org/10.1109/IVNC.2012.6316965 SN - 2380-6311 SN - 2164-2370 SP - 1 EP - 2 PB - IEEE CY - Piscataway, N.J. ER -