TY - CHAP A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Dams, Florian A1 - Serbun, Pavel A1 - Bachmann, Michael A1 - Müller, Günter A1 - Schreiner, Rupert T1 - High aspect ratio silicon tip cathodes for application in field emission electron sources T2 - 2014 27th International Vacuum Nanoelectronics Conference (IVNC), 6-10 July 2014, Engelberg, Switzerland N2 - Precisely aligned arrays of sharp tip structures on top of elongated pillars were realized by using an improved fabrication process including an additional inductively-coupled-plasma reactive-ion etching step. Arrays of n-type and p-type silicon with 271 tips have been fabricated and investigated. Those structures have a total height of 5–6 µm and apex radii less than 20nm. Integral field emission measurements of the arrays yielded low onset-fields in the range of 8–12V=µm and field enhancement factors between 300 and 700. The I-E curves of n-type structures showed the usual Fowler-Nordheim behaviour, whereas p-type structures revealed a significant saturation region due to the limited number of electrons in the conduction band and a further carrier depletion effect caused by the pillar. The maximum integral current in the saturation region was 150 nA at fields above 30V=µm. An excellent stability of the emission current of less than ± 2% fluctuation was observed in the saturation region. For n-type Si a maximum integral current of 10 µA at 24V=µm and an average current stability with a fluctuation of ± 50% were measured. KW - Current measurement KW - Etching KW - FABRICATION KW - field emission KW - field emitter array KW - GEOMETRY KW - Iron KW - Sensor arrays KW - silicon KW - silicon tip Y1 - 2014 U6 - https://doi.org/10.1109/IVNC.2014.6894824 SP - 222 EP - 223 PB - IEEE ER -