TY - JOUR A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Extraction of the characteristics of current-limiting elements from field emission measurement data JF - Journal of Vacuum Science & Technology B N2 - In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes. Y1 - 2017 U6 - https://doi.org/10.1116/1.4971768 VL - 35 IS - 2 ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Bachmann, Michael A1 - Pahlke, Andreas T1 - Field emission properties of p-type black silicon on pillar structures JF - Journal of Vacuum Science & Technology B N2 - Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm. Y1 - 2016 U6 - https://doi.org/10.1116/1.4943919 VL - 34 IS - 2 ER -