TY - JOUR A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - Silicon Field Emission Electron Source With Individually Controllable Single Emitters JF - IEEE Transactions on Electron Devices N2 - An electron source with an array of individually controllable single tips allows the observation of each emitter current simultaneously as well as the measurement of the integral current. Furthermore, the initial activation process of the individual tips and current distribution of the source can be examined. The Si cathode consists of an array of 2 x 2 conically shaped emitter structures on a borosilicate glass substrate. The emitters were fabricated by laser micromachining and wet etching. Integral field emission (FE) measurements were performed in a diode configuration in a vacuum chamber at pressures of about 10(-9) mbar with a self-aligned Si extraction grid, due to adjustment pins. The total emission current was regulated to a predefined value (4.0, 10, 20, 40, and 50 mu A) by an external regulating circuit and recorded individually during the measurement. The onset voltage for a current of 1 nA varied between 320 and 430 V. The voltage conversion factor is in the range of 7.6 x 10(4) cm(-1) to 1.3 x 10(5) cm(-1). Constant currentmeasurementsover a longer periodof time (1800 values with a sample rate of 0.5 Hz) were performed and show a total current fluctuation less than 0.6% due to the regulation circuit. Despite the stable total current in regulated operation, it was observed that the individual emitters fluctuate up to 75% for low (similar to 10(-8) A) and 5% for high (similar to 10(-5) A) currents. KW - Current distribution KW - current limiters KW - electron emission KW - electron sources KW - silicon-on-insulator Y1 - 2021 U6 - https://doi.org/10.1109/TED.2021.3093374 VL - 68 IS - 8 SP - 4116 EP - 4122 PB - IEEE ER - TY - JOUR A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Langer, Christoph A1 - Herdl, Florian A1 - Bergbreiter, Lukas A1 - Dams, Florian A1 - Miyakawa, Natuski A1 - Eggert, Tobias A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Vacuum-sealed field emission electron gun JF - Journal of Vacuum Science & Technology B N2 - A compact vacuum-sealed field emission electron gun with an operation voltage below 5 kV is presented. With a 150 nm thick pyrolytic carbon membrane, a transmission of 40% at 5 kV is obtained. For more than 2500 h of continuous operation at an emission current of 100 nA, no significant increase (<50V ) and almost no degradation were found. From this measurement, a lifetime of more than 10 000 h at continuous operation with approximately a linear increase of the extraction voltage from about 545 V to about 730 V is predicted. This electron source enables application of field emitter arrays in poor vacuum or even ambient pressure. ACKNOWLEDGMENT This work was supported by the German Federal Ministry for Economic Affairs and Energy under Project No. ZF4081502GM8. C.P., R.L., M.H., and R.S. were supported by Grant No. ZF4562901GM8. Y1 - 2020 U6 - https://doi.org/10.1116/1.5139316 VL - 38 IS - 2 PB - AIP Publishing ER - TY - GEN A1 - Bieker, Johannes A1 - Schlaak, Helmut F. A1 - Wilfert, Stefan A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Development of FE-based electron sources for XHVion gauges in cryogenic vacuum environments T2 - 32nd International Vacuum Nanoelectronics Conference (IVNC 2019), 22.-26.07.2019, Cincinnati, USA Y1 - 2019 ER - TY - GEN A1 - Ławrowski, Robert Damian A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Individually Addressable Silicon Field Emission Cathodes Fabricated by Laser Micromachining T2 - 7th ITG International Vacuum Electronics Workshop (IVEW) 2020 and 13th International Vacuum Electron Sources Conference (IVeSC) 2020, 26. - 29.5.2020, Bad Honnef Y1 - 2020 ER - TY - GEN A1 - Hausladen, Matthias A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert T1 - Fast Pulse Source for Field Emission Applications T2 - 7th ITG International Vacuum Electronics Workshop (IVEW) 2020 and 13th International Vacuum Electron Sources Conference (IVeSC) 2020, 26. - 29.5.2020, Bad Honnef Y1 - 2020 ER - TY - JOUR A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Wohlfartsstätter, Dominik A1 - Edler, Simon A1 - Bachmann, Michael A1 - Pahlke, Andreas A1 - Schreiner, Rupert A1 - Hansch, Walter T1 - Quantitative Field Emission Imaging for Studying the Doping-Dependent Emission Behavior of Silicon Field Emitter Arrays JF - Micromachines N2 - Field emitter arrays (FEAs) are a promising component for novel vacuum micro- and nanoelectronic devices, such as microwave power amplifiers or fast-switching X-ray sources. However, the interrelated mechanisms responsible for FEA degradation and failure are not fully understood. Therefore, we present a measurement method for quantitative observation of individual emission sites during integral operation using a low-cost, commercially available CMOS imaging sensor. The emission and degradation behavior of three differently doped FEAs is investigated in current-regulated operation. The measurements reveal that the limited current of the p-doped emitters leads to an activation of up to 55% of the individual tips in the array, while the activation of the n-type FEA stopped at around 30%. This enhanced activation results in a more continuous and uniform current distribution for the p-type FEA. An analysis of the individual emitter characteristics before and after a constant current measurement provides novel perspectives on degradation behavior. A burn-in process that trims the emitting tips to an integral current-specific ideal field enhancement factor is observed. In this process, blunt tips are sharpened while sharp tips are dulled, resulting in homogenization within the FEA. The methodology is described in detail, making it easily adaptable for other groups to apply in the further development of promising FEAs. Y1 - 2023 U6 - https://doi.org/10.3390/mi14112008 VL - 14 IS - 11 PB - MDPI ER - TY - CHAP A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Edler, Simon A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Buchner, Philipp A1 - Schreiner, Rupert A1 - Hansch, Walter T1 - Beta Factor Mapping of Individual Emitting Tips During Integral Operation of Field Emission Arrays T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Emission uniformity mappings of field emitter arrays provide important insight into degradation mechanisms, but are often laborious, non-integral, costly, or not quantifiable. Here, a low-cost Raspberry Pi HQ camera is used as an extraction anode to quantify the emission distribution in field emitter arrays. A verification measurement using controlled SEM electron beams proves, that current-voltage characteristics of individual emission sites can be determined by combining the integral electrical data with the image data. The characteristics are used to quantify the field enhancement factors of an 30x30 silicon field emitter array during integral operation. Comparison of the field enhancement factor distributions before and after a one-hour constant current operation at 1 µA shows an increase from 50 actively emitting tips before to 156 after the measurement. It is shown, that the distribution of field enhancement factors shifts towards lower values, due to the increasing degradation for high field enhancement tips, especially above 1500. KW - field emission KW - field emission imaging KW - field emission distribution KW - field enhancement factor KW - CMOS imaging KW - beta factor Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188957 SP - 224 EP - 226 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schels, Andreas A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Field Emission Electron Source on a Chip Fabricated by Laser-Micromachining and Mems Technology T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - A silicon field emission electron source consisting of a cathode and a grid electrode has been fabricated by laser micromachining. The cathode features 21×21 tips on an area of 4×4 mm 2 , With a self-aligning MEMS technology for the aperture grid, a high electron transmission (99 %) was achieved. Onset voltages of 50…70 V were observed for an emission current of 1 nA. A stable emission current of 1 mA ± 1.3 % at an extraction voltage of 250 V was observed during a 30-min operation. KW - Apertures KW - Field Emission KW - Field Emission Array KW - Ions KW - Laser-Micromachining KW - Lasers KW - Micromechanical devices KW - Silicon KW - Silicon Field Emission Array KW - Steady-state KW - Vacuum systems Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10189001 SP - 115 EP - 116 PB - IEEE ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Herdl, Florian A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - An Integrated Silicon Nanowire Field Emission Electron Source on a Chip with High Electron Transmission T2 - 2023 IEEE 36th International Vacuum Nanoelectronics Conference (IVNC), 10-13 July 2023, Cambridge, MA, USA N2 - Silicon nanowire field emission arrays (50 × 50 pillars) were fabricated on a silicon glass hybrid wafer. The glass acts both as the support for the whole structure and insulator between cathode and extraction grid. The extraction grid matches the emitter structures and is optically aligned and adhered to the emitter chip by a vacuum compatible epoxide adhesive. These chips exhibit an emission current of about 600 μA at an extraction voltage of 300 V. The electron transmission through the grid is above 80 %. 58-hour longtime measurements were conducted showing low degradation of the emission current and high stability of electron transmission. KW - Semiconductor device measurement KW - Stimulated emission KW - Optical device fabrication KW - Glass KW - Power system stability KW - Insulators KW - Electron optics Y1 - 2023 SN - 979-8-3503-0143-4 U6 - https://doi.org/10.1109/IVNC57695.2023.10188878 SP - 6 EP - 8 PB - IEEE ER - TY - CHAP A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Improved Method for Determining the Distribution of FEA Currents by Optical CMOS Sensors T2 - 37th International Vacuum Nanoelectronics Conference (IVNC), 15-19 July 2024, Brno, Czech Republic N2 - CMOS image sensors are utilized to determine the time- and spatially-resolved distribution of the electron emission of silicon field emission arrays. During initial experiments, rather low field emission currents already visibly damaged the sensor surface, altering the system accuracy over the measurement time. Therefore, we coated the sensor surface with copper for protection. In contrast to the original insulating surface, the Cu coating provides a conductive surface for incident electrons and improves heat dissipation in addition. This prevents localized surface charges and surface damages which stabilize the system accuracy. Y1 - 2024 U6 - https://doi.org/10.1109/IVNC63480.2024.10652543 SP - 1 EP - 2 PB - IEEE ER - TY - JOUR A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - The “LED‐version” of the electron gun: An electron source for operation in ambient pressure environments based on silicon field emitter arrays JF - Vakuum in Forschung und Praxis N2 - We report on our progress to develop and optimize electron sources for practical applications. A simple fabrication process is introduced based on a wafer dicing saw and a wet chemical etch step without the need for a clean room. Due to the formation of crystal facets the samples show a homogeneous geometry throughout the array. Characterization techniques are developed to systematically compare various arrays. A very defined measurement procedure based on current controlled IV-sweeps as well as lifetime measurements at various currents is proposed. To investigate the current distribution in the array a commercial CMOS detector is used and shows the potential for in depth analysis of the arrays. Finally, a compact hermetically sealed housing is presented enabling electron generation in atmospheric pressure environments. Y1 - 2023 U6 - https://doi.org/10.1002/vipr.202300801 VL - 35 IS - 3 SP - 32 EP - 37 PB - Wiley ER - TY - JOUR A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Wohlfartsstätter, Dominik A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Measurement of field emission array current distributions by metal-coated CMOS image sensors JF - Journal of Vacuum Science & Technology B N2 - A CMOS image sensor is utilized to determine the time- and spatially resolved distribution of the total electron emission current of a silicon field emission array. The sensor measures electron emission without the need for phosphorus screens or scintillators as converters. However, in initial experiments, rather low field emission currents of several hundreds of nanoamperes per emitter already damaged the sensor surface, which altered the systems’ signal response over the measurement time. In consequence, we coated the CMOS sensor surface with a Cu layer for surface protection. In contrast to the original insulating surface, Cu is an excellent current- and heat-conductor, which avoids lens charging by providing a conductive path for incident electrons and has an improved heat dissipation capability. Measurements using a segmented field emission cathode with four individually addressable tips demonstrate a consistent correlation between the emission current and the sensor signal of the metal-coated image sensor. Furthermore, the characterization of a field emission array showed that single tip emission currents of up to 12 μA per tip are measurable without discernible damage effects of the sensor’s surface. KW - Bremsstrahlung KW - Laser micromachining KW - Image sensors KW - Field emitter arrays Y1 - 2024 U6 - https://doi.org/10.1116/6.0004074 VL - 42 IS - 6 PB - AIP Publishing ER - TY - JOUR A1 - Hausladen, Matthias A1 - Schels, Andreas A1 - Asgharzade, Ali A1 - Buchner, Philipp A1 - Bartl, Mathias A1 - Wohlfartsstätter, Dominik A1 - Edler, Simon A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Investigation of Influencing Factors on the Measurement Signal of a CMOS Image Sensor for Measuring Field Emission Currents JF - Sensors Y1 - 2025 U6 - https://doi.org/10.3390/s25051529 N1 - Corresponding author der OTH Regensburg: Matthias Hausladen VL - 25 IS - 5 PB - MDPI ER - TY - CHAP A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Schreiner, Rupert T1 - Elektronenquellen basierend auf Feldemission aus Silizium T2 - Tagungsband zum 4. Symposium Elektronik und Systemintegration ESI: 17. April 2024, Hochschule Landshut N2 - Der Beitrag gibt einen Überblick über zwei typische Bauformen für Elektronenquellen auf der Basis von Feldemission aus Silizium. Des Weiteren wird eine typische Trioden-Beschaltung solcher Elektronenquellen für hohe Elektronentransmission vorgestellt und dabei auf ihre Leistungsfähigkeit eingegangen. Y1 - 2024 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:860-opus4-4212 SN - 978-3-9818439-9-6 SP - 46 EP - 53 PB - Hochschule für Angewandte Wissenschaften Landshut CY - Landshut ER - TY - GEN A1 - Krysztof, Michal A1 - Baranowski, Kamil A1 - Zychla, Michal A1 - Hausladen, Matthias A1 - Schreiner, Rupert A1 - Knápek, Aleksandr T1 - MP61 - Detection of Electron Beam in Atmospheric Pressure Using CMOS Image Sensor T2 - EUROSENSORS XXXVII ; 07.09.2025 - 10.09.2025 ; Wroclaw ; Poster I N2 - In the article, a new detection system that enables observation of the electron beam signal passing through a gas layer at atmospheric pressure is presented. An experimental setup consisting of an elec-tron gun (electron emitter, extraction, and focus electrodes), silicon nitride membrane, and a CMOS image sensor is described, as well as first image of the electron beam spot after passing through 400 µm of air at atmospheric pressure is presented. Y1 - 2025 U6 - https://doi.org/10.5162/EUROSENSORS2025/MP61 SP - 325 EP - 326 PB - AMA ER - TY - CHAP A1 - Bartl, Mathias A1 - Hausladen, Matthias A1 - Asgharzade, Ali A1 - Buchner, Philipp A1 - Krysztof, Michal A1 - Knápek, Alexandr A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - Experimental method for investigation of the emission pattern characteristics of individual field emission tips using a CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - The emission pattern characteristics of individual silicon field emission tips were investigated using a CMOS image sensor. The quality of the image was improved by spatial and temporal averaging, so that individual emission centers could be identified and their temporal changes investigated. By mapping the emission current onto the image, the distribution of the current density on the image sensor could be calculated. KW - CMOS image sensors KW - Silicon KW - Current density KW - Nanoelectronics Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11121040 PB - IEEE ER - TY - CHAP A1 - Baranowski, Kamil A1 - Zychla, Michał A1 - Krysztof, Michał A1 - Żółtowski, Michał A1 - Hausladen, Matthias A1 - Schreiner, Rupert A1 - Knápek, Aleksandr T1 - Experimenal method for studying electron beams in gaseous environments using a CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - Detecting and analyzing electron beams in atmospheric conditions remains a significant challenge due to scattering and absorption of electrons by gas molecules. In this work, a novel approach using a CMOS image sensor for real-time electron beam detection after its transmission through air is presented. The setup enables visualization of beam divergence, emission profiles, and dynamic behavior under atmospheric pressure. Presented results demonstrate the potential of CMOS image sensor for electron beam analysis in gaseous environment. Y1 - 2025 SN - 979-8-3315-3705-0 U6 - https://doi.org/10.1109/IVNC65669.2025.11120851 PB - IEEE ER - TY - CHAP A1 - Allaham, Mohammad M. A1 - Burda, Daniel A1 - Knápek, Alexandr A1 - Krysztof, Michał A1 - Baranowski, Kamil A1 - Hausladen, Matthias A1 - Schreiner, Rupert T1 - Testing the performance of tungsten-graphite cathodes as MEMS Electron microscope electron source T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - This work presents preliminary results of the performance testing of exfoliated graphene layers deposited on the nanotip of a tungsten field emission cathode. The obtained tungsten-graphite cathodes were then operated in a 3D-printed MEMS electron microscope testing model for later applications. The results were promising, where a maximum emission current of 50.2 μA was obtained with an extraction voltage of 1 kV and anode voltage of 3 kV. Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11121041 PB - IEEE ER - TY - CHAP A1 - Asgharzade, Ali A1 - Bartl, Mathias A1 - Hausladen, Matthias A1 - Chen, Yang A1 - Buchner, Philipp A1 - Edler, Simon A1 - Bachmann, Michael A1 - She, Juncong A1 - Schreiner, Rupert T1 - Investigation on the influence of internal voltage drops on the emission behavior of silicon field emission arrays using CMOS image sensor T2 - 38th International Vacuum Nanoelectronics Conference (IVNC) N2 - In this paper we report on an improved measurement and analysis method for determining the emission current distribution of field emitter arrays with CMOS sensors. It can also be used for field emission arrays where not all surfaces of the emitters are at the same electrical potential (e.g. for p-doped Si tips, where a strong current saturation occurs). To demonstrate the functionality of this method, a n-doped field emission array was measured using a variable external series resistance. Brightness variations in emission spots were analyzed to re-calculate the known series resistances for comparison. The re-calculated value is in good agreement with the actual value of the resistance. This method offers a quantitative approach to assess internal voltage drop effects on field emission using optical readout KW - field emission imaging KW - field emission KW - CMOS sensor Y1 - 2025 U6 - https://doi.org/10.1109/IVNC65669.2025.11120937 PB - IEEE ER - TY - JOUR A1 - Buchner, Philipp A1 - Hausladen, Matthias A1 - Bartl, Mathias A1 - Bachmann, Michael A1 - Schreiner, Rupert T1 - High current field emission from Si nanowires on pillar structures JF - Journal of Vacuum Science and Technology B: Nanotechnology and Microelectronics N2 - We investigate the influence of the geometry and doping level on the performance of n-type silicon nanowire field emitters on silicon pillar structures. Therefore, multiple cathodes with 50 by 50 pillar arrays (diameter: 5 μm, height: 30 μm, spacing: 50 μm) were fabricated and measured in diode configuration. In the first experiment, we compared two geometry types using the same material. Geometry 1 is black silicon, which is a highly dense surface covering a forest of tightly spaced silicon needles resulting from self-masking during a plasma etching process of single crystal silicon. Geometry 2 are silicon nanowires, which are individual spaced-out nanowires in a crownlike shape resulting from a plasma etching process of single crystal silicon. In the second experiment, we compared two different silicon doping levels [n-type (P), 1–10 and <0.005 Ω cm] for the same geometry. The best performance was achieved with lower doped silicon nanowire samples, emitting 2 mA at an extraction voltage of 1 kV. The geometry/material combination with the best performance was used to assemble an integrated electron source. These electron sources were measured in a triode configuration and reached onset voltages of about 125 V and emission currents of 2.5 mA at extraction voltages of 400 V, while achieving electron transmission rates as high as 85.0%. KW - Doping KW - Electron sources KW - Nanowires KW - Plasma processing KW - Field emitter arrays KW - Triodes KW - Semiconductors Y1 - 2024 U6 - https://doi.org/10.1116/6.0003384 SN - 2166-2754 VL - 42 IS - 2 PB - AIP ER - TY - CHAP A1 - Barik, Ranjan Kumar A1 - Rawat, Vikram Singh A1 - Manna, Subhrajit A1 - Bandyopadhyay, Ayan Kumar A1 - Hausladen, Matthias A1 - Asgharzade, Ali A1 - Schreiner, Rupert T1 - On Chip Electron Gun Design Using Silicon Tip Field Emitter Array T2 - 2025 IEEE Microwaves, Antennas, and Propagation Conference (MAPCON), 14-18. Dezember 2025, Kochi, India N2 - Silicon based silicon tip array emitter has developed at OTH Regensburg, Germany. This array emitter is the basis for development of a novel electron gun. This field emitter electron sources were fabricated using laser-micromachining technique followed by MEMS technology. In this work, the design and development of electron gun using complete silicon structure is reported. The goal of this work is to develop electron gun using less effort, easy and hassle free technique. Y1 - 2025 SN - 979-8-3315-3722-7 U6 - https://doi.org/10.1109/MAPCON65020.2025.11426578 PB - IEEE ER - TY - JOUR A1 - Tan, Jing Jie A1 - Schreiner, Rupert A1 - Hausladen, Matthias A1 - Asgharzade, Ali A1 - Edler, Simon A1 - Bartsch, Julian A1 - Bachmann, Michael A1 - Schels, Andreas A1 - Kwan, Ban-Hoe A1 - Ng, Danny Wee-Kiat A1 - Hum, Yan-Chai T1 - SiMiC: Context-aware silicon microstructure characterization using attention-based convolutional neural networks for field-emission tip analysis JF - Journal of Vacuum Science & Technology B N2 - Accurate characterization of silicon microstructures is essential for advancing microscale fabrication, quality control, and device performance. Traditional analysis using scanning electron microscopy (SEM) often requires labor-intensive, manual evaluation of feature geometry, limiting throughput and reproducibility. In this study, we propose SiMiC: Context-aware Silicon Microstructure Characterization Using Attention-based Convolutional Neural Networks for Field-Emission Tip Analysis. By leveraging deep learning, our approach efficiently extracts morphological features—such as size, shape, and apex curvature—from SEM images, significantly reducing human intervention while improving measurement consistency. A specialized dataset of silicon-based field-emitter tips was developed, and a customized convolutional neural network architecture incorporating attention mechanisms was trained for multiclass microstructure classification and dimensional prediction. Comparative analysis with classical image processing techniques demonstrates that SiMiC achieves high accuracy while maintaining interpretability. The proposed framework establishes a foundation for data-driven microstructure analysis directly linked to field-emission performance, opening avenues for correlating emitter geometry with emission behavior and guiding the design of optimized cold-cathode and SEM electron sources. The related dataset and algorithm repository that could serve as a baseline in this area can be found at https://research.jingjietan.com/?q=SIMIC. KW - Field emitter arrays KW - Quality assurance KW - Convolutional neural network KW - Deep learning KW - Image processing KW - Machine learning KW - Cold cathodes KW - Scanning electron microscopy KW - Electron sources KW - Chemical elements Y1 - 2025 U6 - https://doi.org/10.1116/6.0005068 VL - 43 IS - 6 PB - AVS ER -