TY - JOUR A1 - Edler, Simon A1 - Bachmann, Michael A1 - Breuer, Janis A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Jakšič, Jasna A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Influence of adsorbates on the performance of a field emitter array in a high voltage triode setup JF - Journal of Applied Physics N2 - In the present work, black-silicon field emitter arrays (FEAs) are investigated regarding the influence of residual gas pressure on the characteristics and lifetime in the high voltage triode setup. Current-voltage-characteristics at different pressure levels are recorded and show a decreasing emission current with rising pressure. This decrease can be explained by an increase of the work function and charging of the emitter surface caused by adsorbates. The emission current can be restored to its initial value by heating of the FEA up to 110 °C during active emission. With this regeneration procedure, an extended lifetime from about 20 h to 440 h at a residual gas pressure of 10−5 mbar is achieved. Y1 - 2017 U6 - https://doi.org/10.1063/1.4987134 VL - 122 ER - TY - JOUR A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Lützenkirchen-Hecht, Dirk A1 - Müller, Günter T1 - Extraction of the characteristics of current-limiting elements from field emission measurement data JF - Journal of Vacuum Science & Technology B N2 - In this contribution, the authors will present an algorithm to extract the characteristics of nonideal field emission circuit elements from saturation-limited field emission measurement data. The method for calculating the voltage drop on current-limiting circuit elements is based on circuit theory as well as Newton's method. Since the only assumption the authors make on the current-limiting circuit is a connection in series, this method is applicable to most field emission data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters as well as the parameter correlations are fully taken into account throughout the algorithm. N-type silicon samples with varying external serial resistors are analyzed. All results show a good agreement to the nominal resistor values. Additionally, several p-type samples are analyzed, showing a diodelike behavior. The extracted current-limiting characteristics of the p-type samples are in good agreement with a pn-junction model. The stability of the emission current of the p-type samples is measured by constant voltage measurements and compared to the extracted current-limiting characteristics. The application of the algorithm to measurement data shows that the given algorithm is a valuable tool to analyze field emission measurement data influenced by nonemissive processes. Y1 - 2017 U6 - https://doi.org/10.1116/1.4971768 VL - 35 IS - 2 ER - TY - JOUR A1 - Prommesberger, Christian A1 - Bachmann, Michael A1 - Düsberg, Felix A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Schreiner, Rupert T1 - Regulation of the Transmitted Electron Flux in a Field-Emission Electron Source Demonstrated on Si Nanowhisker Cathodes JF - IEEE Transactions on Electron Devices N2 - We report on a method to stabilize the transmitted electron flux in a field-emission electron source using an external regulation circuit. The electron source was realized with an array of silicon (Si) nanowhiskers on the top of elongated pillar structures, a mica spacer, and an extraction grid made of Si. As for most applications, the emitted electron current from the cathode is not as crucial as the transmitted electron flux through the extraction grid toward the anode. We investigated a method which allows the regulation directly by the emitted electron flux and not merely on the cathode current. By using this method, we were able to stabilize the emitted electron flux of our electron source down to values below 1%. Simultaneously, it was shown that there is the possibility to stabilize the influencing value in the real application as well. The effectiveness of this method was demonstrated successfully with an X-ray source setup. The measured X-ray photon count rate was stabilized to a standard deviation of 0.30% at a pressure of 1 × 10 -7 mbar. Even in harsh environment of 2 × 10 -5 mbar, a stabilization of the X-ray photon count rate down to a value of 0.63% was achieved. KW - Cathodes KW - Nanostructured devices KW - Current measurement KW - Photonics KW - Electron sources KW - Emissions KW - Voltage measurement Y1 - 2017 U6 - https://doi.org/10.1109/TED.2017.2763239 SN - 5128-5133 VL - 64 IS - 12 ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Extraction of the characteristics of limiting elements from field emission measurement data T2 - 29th International Vacuum Nanoelectronics Conference (IVNC), 2016, 11-15 July, Vancouver, BC, Canada N2 - In this contribution we will present an algorithm to extract the characteristics of non-Fowler-Nordheim (FN) circuit elements from saturation limited field emission (FE) measurement data. The method for calculating the voltage drop on limiting circuit elements is based on circuit theory as well as Newton's method. Since no assumption on the limiting circuit is made, this method is applicable to any FE data showing saturation. To be able to determine the significance of any parameter output, the uncertainties of data and extracted parameters are fully taken into account throughout the algorithm. External serial resistors and a limiting p-doped substrate are analyzed, where the latter shows a diode-like behavior. Y1 - 2016 U6 - https://doi.org/10.1109/IVNC.2016.7551474 SN - 2380-6311 SP - 81 EP - 82 PB - IEEE ER - TY - CHAP A1 - Bachmann, Michael A1 - Dams, Florian A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Pahlke, Andreas A1 - Langer, Christoph A1 - Ławrowski, Robert Damian A1 - Prommesberger, Christian A1 - Schreiner, Rupert T1 - Control of the electron source current T2 - International Vacuum Nanoelectronics Conference (IVNC), 30th, 2017, Regensburg N2 - A control circuit to stabilize the flux of electrons transmitted through an extractor electrode is presented. By controlling the emission current a fluctuation with a standard deviation of 0.015% is observed. However, the achievable stability of the transmitted electron current is limited due to a variation of the extraction grid current ratio showing a standard deviation of 4.33%. By regulating the difference of the emission current and the extraction grid current an improved stability of the transmitted electron current down to a standard deviation of 0.280% is observed. Even with operation at 2 × 10 -5 mbar a standard deviation of 0.558% is achieved. KW - Standards KW - Circuit stability KW - Power system stability KW - Current measurement KW - Voltage measurement KW - Electron sources KW - Stability analysis Y1 - 2017 U6 - https://doi.org/10.1109/IVNC.2017.8051550 SP - 66 EP - 67 PB - IEEE ER - TY - JOUR A1 - Horn-von Hoegen, Michael A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Kammler, Martin A1 - Schaeffer, C. A1 - Reinking, D. A1 - Hofmann, K. R. T1 - Bi surfactant mediated epitaxy of Ge on Si(111) JF - Thin Solid Films N2 - We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature. KW - Hall mobility KW - Heteroepitaxial growth KW - Surfactants KW - Doping KW - Molecular beam epitaxy KW - Silicon KW - Germanium KW - Bismuth KW - Low energy electron diffraction KW - Scanning electron microscopy Y1 - 1999 U6 - https://doi.org/10.1016/S0040-6090(98)01659-9 VL - 343-344 SP - 579 EP - 582 PB - Elsevier ER - TY - JOUR A1 - Reinking, D. A1 - Kammler, Martin A1 - Hoffmann, N. A1 - Horn-von Hoegen, Michael A1 - Hofmann, K. R. T1 - Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates JF - Electronics Letters N2 - The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs KW - silicon KW - CMOS integrated circuits KW - germanium KW - carrier mobility KW - epitaxial growth KW - integrated circuit technology KW - elemental semiconductors KW - semiconductor growth KW - MOSFET KW - Insulated gate field effect transistors KW - Thin film growth and epitaxy Y1 - 1999 U6 - https://doi.org/10.1049/el:19990349 VL - 35 IS - 6 SP - 503 EP - 504 PB - IET ER - TY - JOUR A1 - Swoboda, Walter A1 - Schmieder, Martin A1 - Bulitta, Clemens A1 - Gaisser, Sibylle A1 - Hofmann, Georg Rainer A1 - Kremer-Rücker, Prisca A1 - Krumme, Julia A1 - Kullmann, Walter A1 - Kunhardt, Horst A1 - Lauer, Norina A1 - Meussling-Sentpali, Annette A1 - Mohr, Christa A1 - Pfingsten, Andrea A1 - Riener, Andreas A1 - Terborg, Barbara A1 - Weber, Beatrix A1 - Weber, Karsten A1 - Wolff, Mechthild T1 - Die gemeinsame Ethik-Kommission der Hochschulen Bayerns - GEHBa JF - mdi - Forum der Medizin-Dokumentation und Medizin-Informatik N2 - Die Einholung eines Ethikvotums ist in der Medizin verpflichtend. Auch in anderen Disziplinen ist eine ethische Beurteilung häufig notwendig. Bisher gibt es nur wenig hierfür zuständige Stellen. Die gemeinsame Ethik-Kommission der Hochschulen Bayerns (GEHBa) füllt diese Lücke. Anträge können gestellt werden unter www.gehba.de. Y1 - 2021 SN - 1438-0900 VL - 23 IS - 3 SP - 80 EP - 83 PB - mdi GbR ER - TY - JOUR A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian A1 - Schreiner, Rupert A1 - Serbun, Pavel A1 - Müller, Günter A1 - Düsberg, Felix A1 - Hofmann, Martin A1 - Bachmann, Michael A1 - Pahlke, Andreas T1 - Field emission properties of p-type black silicon on pillar structures JF - Journal of Vacuum Science & Technology B N2 - Arrays of black silicon field emission pillar structures were fabricated on p-type silicon substrates. Two types of samples with the same number of pillars (arrays of 10 × 10) but different pillar heights (8 and 20 μm) were prepared as well as a black silicon reference sample without pillars. The field emission properties of these cathodes were investigated both by means of integral current-voltage measurements and by field emission scanning microscopy. Samples with a pillar height of 20 μm revealed onset fields as low as 6.4 V/μm, field enhancement factors up to 800, and emission currents up to 8 μA at an applied field of 20 V/μm. Due to the p-type material, a saturation of the emission current for fields above 11 V/μm was observed. This saturation leads to a stable operation with a current fluctuation of less than ±8%. It was found that samples with a pillar height of 20 μm showed improved emission characteristics compared to samples with a pillar height of 8 μm or without pillars. The voltage maps revealed an increased emission homogeneity after a “burn-in” sequence of the sample. The current map showed that a few of the pillars dominate the emission. Integral current stability measurements were performed under different vacuum pressures, in order to investigate altered emission behavior and a potential degradation of the emitters. At pressures above 10−6 mbar, the sample starts to degrade irreversibly. Nevertheless, even after a harsh treatment over 30 min at 5 × 10−5 mbar and at an applied field of 23 V/μm, the cathode was still operating, and did not fail during further operation over 20 h at 5 × 10−8 mbar and at an applied field of 28 V/μm. Y1 - 2016 U6 - https://doi.org/10.1116/1.4943919 VL - 34 IS - 2 ER - TY - JOUR A1 - Mauerer, Wolfgang A1 - Rexhepaj, Tanja A1 - Monkman, Gareth J. A1 - Sindersberger, Dirk A1 - Diermeier, Andreas A1 - Neidhart, Thomas A1 - Wolfrum, Dominik A1 - Sterner, Michael A1 - Heberl, Michael A1 - Nusko, Robert A1 - Maier, Georg A1 - Nagl, Klaus A1 - Reuter, Monika A1 - Hofrichter, Andreas A1 - Lex, Thomas A1 - Lesch, Florian A1 - Kieninger, Bärbel A1 - Szalo, Alexander Eduard A1 - Zehner, Alexander A1 - Palm, Christoph A1 - Joblin, Mitchell A1 - Apel, Sven A1 - Ramsauer, Ralf A1 - Lohmann, Daniel A1 - Westner, Markus A1 - Strasser, Artur A1 - Munndi, Maximilian A1 - Ebner, Lena A1 - Elsner, Michael A1 - Weiß, Nils A1 - Segerer, Matthias A1 - Hackenberg, Rudolf A1 - Steger, Sebastian A1 - Schmailzl, Anton A1 - Dostalek, Michael A1 - Armbruster, Dominik A1 - Koch, Fabian A1 - Hierl, Stefan A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Briem, Ulrich A1 - Diermeier, Andreas A1 - Spreitzer, Stefan A1 - Beiderbeck, Sabrina A1 - Hook, Christian A1 - Zobel, Martin A1 - Weber, Tim A1 - Groß, Simon A1 - Penzkofer, Rainer A1 - Dendorfer, Sebastian A1 - Schillitz, Ingo A1 - Bauer, Thomas A1 - Rudolph, Clarissa A1 - Schmidt, Katja A1 - Liebetruth, Thomas A1 - Hamer, Markus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Weber, Karsten A1 - Saßmannshausen, Sean Patrick A1 - Books, Sebastian A1 - Neuleitner, Nikolaus A1 - Rechenauer, Christian A1 - Steffens, Oliver A1 - Kusterle, Wolfgang A1 - Gömmel, Roland A1 - Wellnitz, Felix A1 - Stierstorfer, Johannes A1 - Stadler, Dominik A1 - Hofmann, Matthias J. A1 - Motschmann, Hubert A1 - Shamonin (Chamonine), Mikhail A1 - Bleicher, Veronika A1 - Fischer, Sebastian A1 - Hackenberg, Rudolf A1 - Horn, Anton A1 - Kawasch, Raphael A1 - Petzenhauser, Michael A1 - Probst, Tobias A1 - Udalzow, Anton A1 - Dams, Florian A1 - Schreiner, Rupert A1 - Langer, Christoph A1 - Prommesberger, Christian A1 - Ławrowski, Robert Damian ED - Baier, Wolfgang T1 - Forschungsbericht 2016 T3 - Forschungsberichte der OTH Regensburg - 2016 Y1 - 2016 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13840 CY - Regensburg ER -