TY - JOUR A1 - Fritz, D. M. A1 - Reis, D. A. A1 - Adams, B. A1 - Akre, R. A. A1 - Arthur, J. A1 - Blome, Christian A1 - Bucksbaum, P. H. A1 - Cavalieri, A. L. A1 - Engemann, S. A1 - Fahy, S. A1 - Falcone, R. W. A1 - Fuoss, P. H. A1 - Gaffney, K. J. A1 - George, M. J. A1 - Hajdu, J. A1 - Hertlein, M. P. A1 - Hillyard, P. B. A1 - Horn-von Hoegen, Michael A1 - Kammler, Martin A1 - Kaspar, J. A1 - Kienberger, R. A1 - Krejcik, P. A1 - Lee, S. H. A1 - Lindenberg, A. M. A1 - McFarland, B. A1 - Meyer, D. A1 - Montagne, T. A1 - Murray, E. D. A1 - Nelson, A. J. A1 - Nicoul, Matthieu A1 - Pahl, R. A1 - Rudati, J. A1 - Schlarb, H. A1 - Siddons, D. P. A1 - Sokolowski-Tinten, Klaus A1 - Tschentscher, Th A1 - von der Linde, D. A1 - Hastings, J. B. T1 - Ultrafast bond softening in bismuth: mapping a solid's interatomic potential with X-rays JF - Science N2 - Intense femtosecond laser excitation can produce transient states of matter that would otherwise be inaccessible to laboratory investigation. At high excitation densities, the interatomic forces that bind solids and determine many of their properties can be substantially altered. Here, we present the detailed mapping of the carrier density-dependent interatomic potential of bismuth approaching a solid-solid phase transition. Our experiments combine stroboscopic techniques that use a high-brightness linear electron accelerator-based x-ray source with pulse-by-pulse timing reconstruction for femtosecond resolution, allowing quantitative characterization of the interatomic potential energy surface of the highly excited solid. Y1 - 2007 U6 - https://doi.org/10.1126/science.1135009 VL - 315 IS - 5812 SP - 633 EP - 636 PB - AAAS ER - TY - JOUR A1 - Hild, R. A1 - Seifert, C. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael A1 - Zhachuk, R.A A1 - Olshanetsky, B.Z T1 - Kinetics of Au induced faceting of vicinal Si(111) JF - Surface Science N2 - Au induced faceting of vicinal Si(1 1 1) has been studied during adsorption at elevated temperature by spot profile analyzing of low energy electron diffraction and after quenching to room temperature by scanning tunneling microscopy. On the surfaces inclined towards five different types of facets form with increasing Au coverage at adsorption temperatures Tads below 800 °C. They are (4 4 3), (7 7 5), (5 5 3), a stepped (2 2 1), and the (3 3 1) facets. Atomic models for the (5 5 3) and (7 7 5) facet planes are proposed on the basis of high resolution STM images. At C we found the formation of an ordered step train which covers the entire surface. With further increasing Au coverage the stepped surface decomposes again into (1 1 1) terraces and step bunches. Driving force is the formation of the Si(1 1 1)-(5×2)–Au reconstruction. KW - Low energy electron diffraction (LEED) KW - Scanning tunneling microscopy KW - Silicon KW - Gold KW - Faceting KW - Adsorption kinetics KW - Step formation and bunching Y1 - 2002 U6 - https://doi.org/10.1016/S0039-6028(02)01666-7 VL - 512 IS - 1-2 SP - 117 EP - 127 PB - Elsevier ER - TY - CHAP A1 - Simonsohn, Angelika A1 - Davies-Knorr, Patricia A1 - Wild-Bode, Christine A1 - Zolyniak, Nicole A1 - Bischoff, Thomas A1 - Pfingsten, Andrea A1 - Fischer, Martin R. T1 - Entwicklung eines interprofessionellen Online-Kurses für Medizin- und Physiotherapiestudierende T2 - Gemeinsame Jahrestagung der Gesellschaft für Medizinische Ausbildung (GMA), des Arbeitskreises zur Weiterentwicklung der Lehre in der Zahnmedizin (AKWLZ) und der Chirurgischen Arbeitsgemeinschaft Lehre (CAL), 25.09. - 28.09.2019, Frankfurt am Main N2 - Das sich verändernde Gesundheitssystem macht Anpassungen in der Ausbildung der Gesundheitsberufe notwendig. Dabei wird die Stärkung der Interprofessionalität besonders betont. Die Entwicklung und Implementierung von interprofessionellen Lernszenarien birgt jedoch oftmals organisatorisch-logistische Herausforderungen. Es fehlen derzeit noch orts- und zeitunabhängige Lernszenarien, die asynchrones interprofessionelles Lernen ermöglichen. Der neu entwickelte Online-Kurs „Medizin und Physiotherapie in der Rehabilitation“ hat zum Ziel, zur Schließung dieser Lücke beizutragen. Die Kursentwicklung ist Teil eines Forschungsprojekts, das den Einfluss von interprofessionellem Online-Lernen auf die Kooperationskompetenz untersucht. Y1 - 2019 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:0183-19gma3108 PB - German Medical Science CY - Düsseldorf ER - TY - INPR A1 - Cavalleri, Andrea A1 - Siders, Craig A1 - Toth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, Dietrich A1 - Kammler, Martin A1 - Horn- von Hoegen, Michael T1 - Measurement of harmonic and anharmonic semi-conductor-lattice dynamics with ultrafast x-ray diffraction N2 - Many fundamental processes in solids, such as heat transport and phase transitions involve atomic movement on ultrafast time-scales, but cannot be directly measured with visible light. Using ultrafast x-ray diffraction, atomic motion can be measured on its natural time-scale. Photo-excitation of bulk and layered semiconductors was achieved with 800-nm wavelength femtosecond laser pulses. Optical excitation triggers a chain of relaxation processes, causing rapid lattice heating, generation and propagation of stress/strain waves into the bulk and eventual anharmonic decay of coherent acoustic phonons into the thermal bath of the solid. While the first steps of carrier relaxation, excitation and decay of Raman-active optical phonons have been in the past characterized optically at surfaces, the bulk acoustic dynamics at longer times has not. We measure length scales of lattice excitation, thereby detecting ultrafast heat diffusion via fast electrons, coherent acoustic pulse propagation into the bulk or across buried interfaces and anharmonic damping of non-equilibrium acoustic phonons. The measurement is performed with sensitivity on lattice spacing of 10 femtometers (i.e., 3 nuclear diameters). Y1 - 2000 UR - https://www.researchgate.net/publication/252175863_Measurement_of_harmonic_and_anharmonic_semi-conductor-lattice_dynamics_with_ultrafast_x-ray_diffraction ER - TY - INPR A1 - Siders, Craig A1 - Cavalleri, Andrea A1 - Toth, Csaba A1 - Squier Jeff A., A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, Dietrich A1 - Kammler, Martin A1 - Horn- von Hoegen, Michael T1 - Ultrafast Nonthermal Melting of Femtosecond-laser-irradiated Germanium Measured by Ultrafast X-ray Diffraction N2 - Many fundamental processes in nature, such as chemical reactions and phase transitions involve rearrangement of the constituent atoms. Such changes cannot be directly measured with visible light and occur transiently on time-scales comparable with the natural oscillation periods of atoms (femtoseconds to picoseconds). We present experiments on Ge-111 films irradiated with 100-fs 800-nm light pulses and probed by a time-delayed sub-ps x-ray pulse at 8 keV. After excitation of a dense electron-hole plasma within the 160-nm film, the ultrafast pathway of lattice disordering is measured as a function laser fluence. For close-to-threshold irradiation, inhomogeneous thermal melting, occurring via surface nucleation of the liquid phase and growth into the bulk determines the dynamics of the solid-to-liquid phase transition. For excitation at about twice the melting threshold, a nonthermal pathway, starting from a highly excited cold solid and relaxing into a hot liquid causes ultrafast melting. At long time delays, nearly perfect recrystallization of a (111) crystal is observed. Y1 - 2000 UR - https://www.researchgate.net/publication/252159566_Ultrafast_Nonthermal_Melting_of_Femtosecond-laser-irradiated_Germanium_Measured_by_Ultrafast_X-ray_Diffraction ER - TY - CHAP A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Wilson, K. R. A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. T1 - Femtosecond X-ray diffraction of short-pulse irradiated semiconductors T2 - Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA N2 - Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules. KW - high-speed techniques KW - X-ray diffraction KW - laser beam effects KW - semiconductor materials KW - solid-liquid transformations KW - solid-state phase transformations KW - metal-insulator transition Y1 - 2002 U6 - https://doi.org/10.1109/CLEO.2002.1033997 SP - 297 EP - 298 PB - IEEE ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Kammler, Martin T1 - Transient lattice dynamics in fs-laser-excited semiconductors probed by ultrafast X-ray diffraction JF - Journal de Physique IV N2 - A study of lattice dynamics in fs-laser-excited crystalline bulk Ge and Ge/Si-heterostructures, using time-resolved x-ray diffraction, was presented. Fast energy transport deep into the bulk of the material, coherent acoustic phonon dynamics, lattice anharmonicity, and vibrational transport across a buried interfaces were observed. Graphs showing time-dependent shifts of the centroid of the measured rocking curves in the Ge-overlayer and in the Si-substrate for different fluences, were presented. Y1 - 2001 U6 - https://doi.org/10.1051/jp4:2001290 VL - 11 IS - Pr2 SP - 473 EP - 477 PB - EDP ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. T1 - Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures JF - Chemical Physics N2 - Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed. Y1 - 2001 U6 - https://doi.org/10.1007/978-3-642-56546-5_81 VL - 66 SP - 281 EP - 283 PB - Springer ER - TY - INPR A1 - Tringides, Michael C. A1 - Conrad, E. H. A1 - Menzel, Andreas A1 - Voss, Neil R. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Dynamics of atomic steps on Si(001) studied by temporal LEED spectroscopy [Poster] N2 - While surface kinetics measurements for single atom diffusion have proliferated, little work exists attempting to measure surface dynamics under equilibrium conditions. We will present our recent work on developing Temporal LEED Spectroscopy (TLS) as a dynamic probe of surfaces capable of kinetics measurements at both high temperatures and surface coverages. By tuning the diffraction to specific structural entities such as steps, islands, etc., and monitoring the diffracted signal as a function of time, dynamics information about these structures can be obtained. As an example we will present TLS results for the dynamics of step fluctuations on Si(001) [1]. We have measured activation energies and identified step-edge diffusion as the rate limiting process for 950K < T < 1130K. Although this result is in apparent disagreement with earlier work, a careful analysis, considering crossover temperatures between different microscopic processes, can reconcile the differences. 1. M. Kammler, et al., Phys. Rev. B (in press). Y1 - 2002 UR - https://www.researchgate.net/publication/252546721_Dynamics_of_atomic_steps_on_Si001_studied_by_temporal_LEED_spectroscopy_poster ER - TY - JOUR A1 - Horn-von Hoegen, Michael A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Kammler, Martin A1 - Schaeffer, C. A1 - Reinking, D. A1 - Hofmann, K. R. T1 - Bi surfactant mediated epitaxy of Ge on Si(111) JF - Thin Solid Films N2 - We have tested Bi for the surfactant mediated epitaxy of Ge on Si(111). Islanding of Ge is prevented and a 2D layer growth of smooth and continuous Ge films is observed. The lattice mismatch is accommodated by a periodic array of dislocations confined to the Si/Ge interface. The large covalent radius of Bi reduces the binding energy, allowing Very efficient segregation and low doping levels even at low growth temperatures. Unfortunately, this results also in a high Bi desorption flux limiting the possible growth temperatures below 600 degrees C. Consequently the Ge films show a high defect density in the order of 10(8) cm(-2) for stacking faults and 10(9) cm(-2) for dislocations which limit electron Hall mobility to values below 700 cm(2)/V s at room temperature. KW - Hall mobility KW - Heteroepitaxial growth KW - Surfactants KW - Doping KW - Molecular beam epitaxy KW - Silicon KW - Germanium KW - Bismuth KW - Low energy electron diffraction KW - Scanning electron microscopy Y1 - 1999 U6 - https://doi.org/10.1016/S0040-6090(98)01659-9 VL - 343-344 SP - 579 EP - 582 PB - Elsevier ER - TY - JOUR A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Leitner, D. M. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Kammler, Martin T1 - Anharmonic lattice dynamics in germanium measured with ultrafast x-ray diffraction JF - Physical review letters N2 - Damping of impulsively generated coherent acoustic oscillations in a femtosecond laser-heated thin germanium film is measured as a function of fluence by means of ultrafast x-ray diffraction. By simultaneously measuring picosecond strain dynamics in the film and in the unexcited silicon substrate, we separate anharmonic damping from acoustic transmission through the buried interface. The measured damping rate and its dependence on the calculated temperature of the thermal bath is consistent with estimated four-body, elastic dephasing times (T2) for 7-GHz longitudinal acoustic phonons in germanium. Y1 - 2000 U6 - https://doi.org/10.1103/PhysRevLett.85.586 VL - 85 IS - 3 SP - 586 EP - 589 PB - APS ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. A1 - Cavalleri, Andrea A1 - Siders, C. W. A1 - Brown, F. L. H. A1 - Tóth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Kammler, Martin T1 - Time-resolved x-ray diffraction study of ultrafast acoustic phonon dynamics in Ge/Si-heterostructures JF - International Conference on Ultrafast Phenomena , 9 July 2000, Charleston N2 - Using time-resolved x-ray diffraction the ultafast strain dynamics in fs-laserexcited Ge/Si-heterostructures has been studied. A fluence dependent, anharmonic damping of the impulsively generated acoustic phonons and vibrational transport across the buried Ge/Si-interface are observed. KW - Acoustic Phonon KW - Acoustic Transmission KW - Carrier Diffusion KW - Homogenous Expansion KW - Lattice Anharmonicity Y1 - 2000 UR - https://opg.optica.org/abstract.cfm?uri=UP-2000-MF43 PB - Optica ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Detection of nonthermal melting by ultrafast X-ray diffraction JF - Science N2 - Using ultrafast, time-resolved, 1.54 angstrom x-ray diffraction, thermal and ultrafast nonthermal melting of germanium, involving passage through nonequilibrium extreme states of matter, was observed. Such ultrafast, optical-pump, x-ray diffraction probe measurements provide a way to study many other transient processes in physics, chemistry, and biology, including direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Y1 - 1999 U6 - https://doi.org/10.1126/science.286.5443.1340 VL - 286 IS - 5443 SP - 1340 EP - 1342 ER - TY - JOUR A1 - Reinking, D. A1 - Kammler, Martin A1 - Hoffmann, N. A1 - Horn-von Hoegen, Michael A1 - Hofmann, K. R. T1 - Fabrication of high-mobility Ge p-channel MOSFETs on Si substrates JF - Electronics Letters N2 - The first fabrication of Ge p-channel MOSFETs (p-MOSFETs) on Si substrates is reported. A CMOS compatible process based on relaxed Ge layers grown on Si(111) substrates by surfactant mediated epitaxy (SME) was used. The non-optimised low temperature process yielded normally-off Ge p-MOSFETs with record channel drift mobilities of 430 cm2/Vs KW - silicon KW - CMOS integrated circuits KW - germanium KW - carrier mobility KW - epitaxial growth KW - integrated circuit technology KW - elemental semiconductors KW - semiconductor growth KW - MOSFET KW - Insulated gate field effect transistors KW - Thin film growth and epitaxy Y1 - 1999 U6 - https://doi.org/10.1049/el:19990349 VL - 35 IS - 6 SP - 503 EP - 504 PB - IET ER - TY - JOUR A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Sokolowski-Tinten, Klaus A1 - Tóth, Csaba A1 - Guo, T. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - Wilson, K. R. A1 - von der Linde, D. A1 - Barty, C. P. J. T1 - Direct Observation of Ultrafast Non-thermal Melting by Ultrafast X-ray Diffraction JF - Ultrafast Phenomena XII N2 - Ultrafast nonthermal melting of femtosecond laser-irradiated germanium was observed directly for the first time using sub-picosecond, 1.54-angstrom x-ray diffraction. Such measurements allow the study of transient atomic motion fundamental to many processes in physics, chemistry, and biology. Y1 - 2000 U6 - https://doi.org/10.1007/978-3-642-56546-5_80 VL - 66 SP - 276 EP - 280 PB - Springer ER - TY - CHAP A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, D. A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Guo, T. A1 - Wilson, K. R. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Lattice dynamics of femtosecond laser-excited semiconductors probed by ultrafast x-ray diffraction T2 - Applications of High Field and Short Wavelength Sources VIII N2 - The present knowledge of the atomic structure of matter is to a large extent due to x-ray spectroscopies. Y1 - 1999 U6 - https://doi.org/10.1364/HFSW.1999.PD3 PB - Optica ER - TY - JOUR A1 - Steindl, Florian R. A1 - Mittermayr, Florian A1 - Sakoparnig, Marlene A1 - Juhart, Joachim A1 - Briendl, Lukas G. A1 - Lindlar, Benedikt A1 - Ukrainczyk, Neven A1 - Dietzel, Martin A1 - Kusterle, Wolfgang A1 - Galan, Isabel T1 - On the porosity of low-clinker shotcrete and accelerated pastes JF - Construction and Building Materials N2 - Although the number and size of interconnected pores have been identified as the most important aspects of concrete microstructure, comprehensive datasets on shotcrete porosity and pore size distributions are still scarce and their key controls are poorly investigated. In this study we investigate the effects of the spraying process, setting accelerator addition and mix design on the microstructure of real-scale dry- and wet-mix shotcrete and hand-mixed and sprayed accelerated pastes. A newly proposed deconvolution analysis of the pore size distributions, measured by mercury intrusion porosimetry, offers increased precision in determining the critical and median pore diameter parameters. In total >50 samples were analysed. Results show that the dry-mix shotcrete exhibits a shift towards coarser pore sizes (∼100–1 μm) than wet-mix shotcrete. Combinations of different supplementary cementitious materials are favourable for producing wet-mix shotcretes with refined pore structures. The addition of setting accelerators, up to 10 wt-% of binder mass, and the spraying process cause systematic variations in the pore volume and pore structure of (sprayed) paste and shotcrete. KW - Porosity KW - Shotcrete KW - Mercury Intrusion KW - Durability KW - SCMs Y1 - 2023 U6 - https://doi.org/10.1016/j.conbuildmat.2023.130461 SN - 0950-0618 VL - 368 PB - Elsevier CY - 14 ER - TY - JOUR A1 - Krenzer, Boris A1 - Hanisch-Blicharski, Anja A1 - Schneider, Paul A1 - Payer, Thomas A1 - Möllenbeck, Simone A1 - Osmani, O. A1 - Kammler, Martin A1 - Meyer, R. A1 - Horn-von Hoegen, Michael T1 - Phonon confinement effects in ultrathin epitaxial bismuth films on silicon studied by time-resolved electron diffraction JF - Physical Review B N2 - The transient temperature evolution of ultrathin bismuth films, epitaxially grown on a silicon single crystal, upon femtosecond laser excitation is studied by time-resolved electron diffraction. The exponential decay of the film temperature is explained by phonon reflection at the interface, which results in a strongly reduced thermal conduction in the cross plane of the layered system. The thermal boundary conductance is found to be as low as 1273 W/(K cm2). Model calculations, including phonon confinement effects, explain the linear relationship between the observed film-temperature decay constant and the film thickness. Even for 2.5 nm thin films the phonon transmission probability across the interface is given by bulk properties. Our simulations show that phonon confinement effects are negligible for bismuth-film thicknesses larger than 1 nm. Y1 - 2009 U6 - https://doi.org/10.1103/PhysRevB.80.024307 VL - 80 IS - 2 PB - APS ER - TY - JOUR A1 - Ilgner, Justus F. R. A1 - Palm, Christoph A1 - Schütz, Andreas G. A1 - Spitzer, Klaus A1 - Westhofen, Martin A1 - Lehmann, Thomas M. T1 - Colour Texture Analysis for Quantitative Laryngoscopy JF - Acta Otolaryngologica N2 - Whilst considerable progress has been made in enhancing the quality of indirect laryngoscopy and image processing, the evaluation of clinical findings is still based on the clinician's judgement. The aim of this paper was to examine the feasibility of an objective computer-based method for evaluating laryngeal disease. Digitally recorded images obtained by 90 degree- and 70 degree-angled indirect rod laryngoscopy using standardized white balance values were made of 16 patients and 19 healthy subjects. The digital images were evaluated manually by the clinician based on a standardized questionnaire, and suspect lesions were marked and classified on the image. Following colour separation, normal vocal cord areas as well as suspect lesions were analyzed automatically using co-occurrence matrices, which compare colour differences between neighbouring pixels over a predefined distance. Whilst colour histograms did not provide sufficient information for distinguishing between healthy and diseased tissues, consideration of the blue content of neighbouring pixels enabled a correct classification in 81.4% of cases. If all colour channels (red, green and blue) were regarded simultaneously, the best classification correctness obtained was 77.1%. Although only a very basic classification differentiating between healthy and diseased tissue was attempted, the results showed progress compared to grey-scale histograms, which have been evaluated before. The results document a first step towards an objective, machine-based classification of laryngeal images, which could provide the basis for further development of an expert system for use in indirect laryngoscopy. KW - diagnostic laryngoscopy KW - electronic imaging KW - endoscopy KW - neoplastic larynx disease Y1 - 2003 U6 - https://doi.org/10.1080/00016480310000412 VL - 123 SP - 730 EP - 734 ER - TY - CHAP A1 - Hassan, H. A1 - Ilgner, Justus F. R. A1 - Palm, Christoph A1 - Lehmann, Thomas M. A1 - Spitzer, Klaus A1 - Westhofen, Martin ED - Lehmann, Thomas M. ED - Spitzer, Klaus ED - Tolxdorff, Thomas T1 - Objective Judgement of Endoscopic Laryngeal Images T2 - Advances in Quantitative Laryngoscopy, Voice and Speech Research, Proceedings of the 3rd International Workshop, RWTH Aachen N2 - Video Documentation of endoscopic findings simplifies diagnostic counseling of the patient and aids pre-operative discussion among the medical team. Judgment of such images is still subjective and can not give a quantitative evaluation of the disease process regarding diagnosis or response to treatment. Modern treatment of early laryngeal cancer with laserablation requires intensive follow up and frequent direct laryngoscopy under general anesthesia with blind biopsies to detect any tumor residual or recurrence. Inflammatory conditions of the larynx are frequently confused with other causes of dysphonia. Mapping anddigital analysis of the documented image will suggest the tumor site and avoids undue blind biopsies under anesthesia. However, varying illumination results in different colors reflected from the same object. To achieve quantitative analysis, color constancy has to be assured. Inthis paper, the environment is presented which allow the objective judgment of larngoscopies. KW - Laryngoscopy KW - Diagnosis KW - Image processing KW - Quantitative Image analysis KW - Colorconstancy Y1 - 1998 UR - https://citeseerx.ist.psu.edu/doc_view/pid/caf5bedf5cf68ed3be68054b140a1241f4f278e2 SP - 135 EP - 142 ER -