TY - CHAP A1 - Herdl, Florian A1 - Bachmann, Michael A1 - Wohlfartsstätter, Dominik A1 - Düsberg, Felix A1 - Dudeck, Markus A1 - Eder, Magdalena A1 - Meyer, Manuel A1 - Pahlke, Andreas A1 - Edler, Simon A1 - Schels, Andreas A1 - Hansch, Walter A1 - Schreiner, Rupert A1 - Wohlfartsstatter, Dominik A1 - Dusberg, Felix T1 - A novel current dependent field emission performance test T2 - 2021 34th International Vacuum Nanoelectronics Conference (IVNC): 5-9 July 2021, Lyon, France N2 - A current dependent performance test for comparison of different field emitter arrays is introduced. Statistical analysis is enabled due to a short measurement time and as a main feature the electric field shift, comparable to the degradation of the emitter is examined. Significance of the test method is shown by a comparison of field emitter arrays with different doping levels. KW - Current measurement KW - Field emitter arrays KW - Statistical analysis KW - Systematics KW - Time measurement KW - Tools KW - Vacuum systems Y1 - 2021 U6 - https://doi.org/10.1109/IVNC52431.2021.9600695 SP - 1 EP - 2 ER - TY - JOUR A1 - Schels, Andreas A1 - Edler, Simon A1 - Herdl, Florian A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Ritter, Daniela A1 - Dudeck, Markus A1 - Duesberg, Felix A1 - Meyer, Manuel A1 - Pahlke, Andreas A1 - Hausladen, Matthias A1 - Buchner, Philipp A1 - Schreiner, Rupert T1 - In situ quantitative field emission imaging using a low-cost CMOS imaging sensor JF - Journal of Vacuum Science & Technology B N2 - Spatially resolved field emission measurements represent an important factor in further development of existing field emitter concepts. In this work, we present a novel approach that allows quantitative analysis of individual emission spots from integral current-voltage measurements using a low-cost and commercially available CMOS camera. By combining different exposure times to extrapolate oversaturated and underexposed pixels, a near congruence of integral current and image brightness is shown. The extrapolation also allows parallel investigation of all individual tips participating in the total current with currents ranging from a few nanoampere to one microampere per tip. The sensitivity, which is determined by the integral brightness-to-current ratio, remains unchanged within the measurement accuracy even after ten full measurement cycles. Using a point detection algorithm, the proportional current load of each individual tip of the field emitter array is analyzed and compared at different times during the initial measurement cycle. Together with the extracted I-V curves of single emission spots from the integral measurement, the results indicate the effect of premature burnout of particularly sharp tips during conditioning of the emitter. KW - ARRAYS KW - ELECTRON-EMISSION KW - EMITTERS KW - FakANK Y1 - 2022 U6 - https://doi.org/10.1116/6.0001551 VL - 40 IS - 1 PB - AIP Publishing ER - TY - JOUR A1 - Edler, Simon A1 - Schels, Andreas A1 - Herdl, Florian A1 - Hansch, Walter A1 - Bachmann, Michael A1 - Dudeck, Markus A1 - Duesberg, Felix A1 - Pahlke, Andreas A1 - Hausladen, Matthias A1 - Buchner Philipp, A1 - Schreiner, Rupert T1 - Origin of the current saturation level of p-doped silicon field emitters JF - Journal of Vacuum Science & Technology B N2 - Using p-type semiconductors for field emitters is one simple way to realize an integrated current limiter to improve the lifetime of the cathode. In this work, the origin of the current saturation of p-type silicon emitters is investigated in detail. Single emitters are electrically characterized and compared to simulation results. With a simulation model considering a high surface generation rate and elevated tip temperature, a good agreement to the measured data is found. This observation is supported further by alteration of the surface experimentally. Electrical measurements after different treatments in hydrofluoric acid as well as heated and subsequent operation at room temperature are well explained by the influence of surface generation. Furthermore, it is shown that the field penetration leads to a small voltage drop and a strong geometry-dependent reduction of the field enhancement factor. KW - EMISSION KW - GROWTH KW - NATIVE-OXIDE Y1 - 2022 U6 - https://doi.org/10.1116/6.0001554 VL - 40 IS - 1 PB - AIP Publishing ER -