TY - JOUR A1 - Scharfenberg, Georg A1 - Mottok, Jürgen A1 - Artmann, Christina A1 - Hobelsberger, Martin A1 - Paric, Ivan A1 - Großmann, Benjamin A1 - Pohlt, Clemens A1 - Wackerbarth, Alena A1 - Pausch, Uli A1 - Heidrich, Christiane A1 - Fadanelli, Martin A1 - Elsner, Michael A1 - Pöcher, Daniel A1 - Pittroff, Lenz A1 - Beer, Stefan A1 - Brückl, Oliver A1 - Haslbeck, Matthias A1 - Sterner, Michael A1 - Thema, Martin A1 - Muggenthaler, Nicole A1 - Lenck, Thorsten A1 - Götz, Philipp A1 - Eckert, Fabian A1 - Deubzer, Michael A1 - Stingl, Armin A1 - Simsek, Erol A1 - Krämer, Stefan A1 - Großmann, Benjamin A1 - Schlegl, Thomas A1 - Niedersteiner, Sascha A1 - Berlehner, Thomas A1 - Joblin, Mitchell A1 - Mauerer, Wolfgang A1 - Apel, Sven A1 - Siegmund, Janet A1 - Riehle, Dirk A1 - Weber, Joachim A1 - Palm, Christoph A1 - Zobel, Martin A1 - Al-Falouji, Ghassan A1 - Prestel, Dietmar A1 - Scharfenberg, Georg A1 - Mandl, Roland A1 - Deinzer, Arnulf A1 - Halang, W. A1 - Margraf-Stiksrud, Jutta A1 - Sick, Bernhard A1 - Deinzer, Renate A1 - Scherzinger, Stefanie A1 - Klettke, Meike A1 - Störl, Uta A1 - Wiech, Katharina A1 - Kubata, Christoph A1 - Sindersberger, Dirk A1 - Monkman, Gareth J. A1 - Dollinger, Markus A1 - Dembianny, Sven A1 - Kölbl, Andreas A1 - Welker, Franz A1 - Meier, Matthias A1 - Thumann, Philipp A1 - Swidergal, Krzysztof A1 - Wagner, Marcus A1 - Haug, Sonja A1 - Vernim, Matthias A1 - Seidenstücker, Barbara A1 - Weber, Karsten A1 - Arsan, Christian A1 - Schone, Reinhold A1 - Münder, Johannes A1 - Schroll-Decker, Irmgard A1 - Dillinger, Andrea Elisabeth A1 - Fuchshofer, Rudolf A1 - Monkman, Gareth J. A1 - Shamonin (Chamonine), Mikhail A1 - Geith, Markus A. A1 - Koch, Fabian A1 - Ühlin, Christian A1 - Schratzenstaller, Thomas A1 - Saßmannshausen, Sean Patrick A1 - Auchter, Eberhard A1 - Kriz, Willy A1 - Springer, Othmar A1 - Thumann, Maria A1 - Kusterle, Wolfgang A1 - Obermeier, Andreas A1 - Udalzow, Anton A1 - Schmailzl, Anton A1 - Hierl, Stefan A1 - Langer, Christoph A1 - Schreiner, Rupert ED - Baier, Wolfgang T1 - Forschungsbericht 2015 T3 - Forschungsberichte der OTH Regensburg - 2015 Y1 - 2015 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:898-opus4-13867 SN - 978-3-00-048589-3 CY - Regensburg ER - TY - CHAP A1 - Steffens, Oliver A1 - Szabó, Peter A1 - Lenz, Michael A1 - Farkas, Gábor T1 - Thermal transient characterization methodology for single-chip and stacked structures BT - Best Paper Award T2 - Semiconductor Thermal Measurement and Management Symposium, 2005 N2 - High-power semiconductor packages typically exhibit a 3D heat flow, resulting in large lateral changes in chip and case surface temperature. For single-chip devices we propose to use an unambiguous definition for the junction-to-case thermal resistance as a key parameter, based on a transient measurement technique with much higher repeatability, also for very low thermal resistances compared to a two-point thermal resistance measurement. The technique is illustrated on thermal transient measurements of power MOSFETs. A comparison between different thermal coupling to the ambient is used to demonstrate the method's capability to reveal even subtle internal details of the package. The concept is extended to multichip and stacked-chip structures, where transfer impedances have to be introduced. Here, the dynamic properties of the package are important and complex impedance mapping is the proper way to characterize the package. KW - Thermal resistance KW - Temperature KW - Electrical resistance measurement KW - Impedance KW - Assembly KW - Semiconductor device packaging KW - Surface resistance KW - Measurement techniques KW - MOSFETs Y1 - 2005 U6 - https://doi.org/10.1109/STHERM.2005.1412198 SN - 1065-2221 SP - 313 EP - 321 PB - IEEE ER - TY - JOUR A1 - Szabó, Peter A1 - Steffens, Oliver A1 - Lenz, Michael A1 - Farkas, Gábor T1 - Transient junction-to-case thermal resistance measurement methodology of high accuracy and high repeatability JF - IEEE Transactions on Components and Packaging Technologies N2 - High-power packages show a characteristic three-dimensional heat flow resulting in large lateral changes in chip and case surface temperature. This paper proposes an unambiguous definition for the R/sub thJC/ junction-to-case thermal resistance as a key parameter of such packages based on a transient measurement technique ensuring high repeatability even at very low R/sub th/ values. The technique is illustrated on thermal transient measurements of high-power MOSFET devices. It is also presented how the same measurement results can be used for die attach quality analysis. Finally, a comparative method is shown for measuring the differences of R/sub th/ values among samples with many times higher resolution compared with a direct R/sub thJC/ measurement. KW - Thermal resistance KW - Electrical resistance measurement KW - Temperature KW - Packaging KW - Cold plates KW - MOSFET circuits KW - Semiconductor device measurement KW - Surface resistance KW - Microassembly KW - Thermal conductivity Y1 - 2005 U6 - https://doi.org/10.1109/TCAPT.2005.859768 SN - 1521-3331 VL - 28 IS - 4 SP - 630 EP - 636 ER -