TY - JOUR A1 - Payer, Thomas A1 - Klein, C. A1 - Acet, M. A1 - Ney, V. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Horn-von Hoegen, Michael T1 - High-quality epitaxial Bi(111) films on Si(111) by isochronal annealing JF - Thin Solid Films N2 - Bi(111) films grown on Si(111) at room temperature show a significantly higher roughness compared to Bi films grown on Si(100) utilizing a kinetic pathway based on a low-temperature process. Isochronal annealing steps of 3 min duration each with temperatures up to 200 °C cause a relaxation of the Bi films' lattice parameter toward the Bi bulk value and yield an atomically flat Bi surface. Driving force for the relaxation and surface reordering is the magic mismatch of 11 Bi atoms to 13 Si atoms that emerges at annealing temperatures above 150 °C and reduces the remaining strain to less than 0.2%. KW - Epitaxy KW - Strain KW - Annealing KW - Bismuth KW - Silicon Y1 - 2012 U6 - https://doi.org/10.1016/j.tsf.2012.06.004 VL - 520 IS - 23 SP - 6905 EP - 6908 PB - Elsevier ER - TY - JOUR A1 - Klein, C. A1 - Nabbefeld, T. A1 - Hattab, H. A1 - Meyer, D. A1 - Jnawali, G. A1 - Kammler, Martin A1 - Meyer zu Heringdorf, Frank-Joachim A1 - Golla-Franz, A. A1 - Müller, B. H. A1 - Schmidt, Thomas A1 - Henzler, M. A1 - Horn-von Hoegen, Michael T1 - Lost in reciprocal space? Determination of the scattering condition in spot profile analysis low-energy electron diffraction JF - Review of scientific instruments N2 - The precise knowledge of the diffraction condition, i.e., the angle of incidence and electron energy, is crucial for the study of surface morphology through spot profile analysis low-energy electron diffraction (LEED). We demonstrate four different procedures to determine the diffraction condition: employing the distortion of the LEED pattern under large angles of incidence, the layer-by-layer growth oscillations during homoepitaxial growth, a G(S) analysis of a rough surface, and the intersection of facet rods with 3D Bragg conditions. Y1 - 2011 U6 - https://doi.org/10.1063/1.3554305 VL - 82 IS - 3 PB - American Institute of Physics ER -