TY - CHAP A1 - Melekhov, Evgeny A1 - Abb, Valerius A1 - Lechner, Alfred A1 - Kammler, Martin ED - Ivanov, Artem ED - Bicker, Marc ED - Patzelt, Peter T1 - Development of a glass-fiber-based spectrometer for the determination of drug residues in groundwater T2 - Tagungsband 2. Symposium Elektronik und Systemintegration ESI 2020 "Intelligente Systeme und ihre Komponenten: Forschung und industrielle Anwendung" N2 - Within the scope of this project, a portable measuring device has been developed which enables a cost-effective analysis of organic substances from ppm to sub-ppm range, such as drug residues in groundwater. The measurement is carried out by means of a surface-enhanced Raman scattering effect (SERS effect) and an exchangeable sensor head. The sensor head used is a nanostructured optical glass fiber glued into a fiber cannula. The tip of the fiber has been processed to act as a SERS cell. The fiber cannula is connected to a freely movable patch cable by using an adapter. Para-thiocresol is used to characterize the SERS cells. Y1 - 2020 U6 - http://nbn-resolving.de/urn/resolver.pl?urn:nbn:de:bvb:860-opus4-2174 SN - 978-3-9818439-4-1 SP - 101 EP - 109 ER - TY - GEN A1 - Melekhov, Evgeny A1 - Abb, Valerius A1 - Weidauer, Tobias A1 - Kammler, Martin A1 - Lechner, Alfred T1 - Tunable Nanopillars as Surface Enhanced Raman Scattering (SERS) Active Structure for Optical Quartz Glass Fiber T2 - SMSI 2021 - Sensors and Instrumentation N2 - In this work, a simple cost effective method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas on a tip of an optical quartz glass fiber is described. The structures are prepared using lithography-less dry etching. Gold nanoparticles are used as an etching mask using a thin metal-film thermal dewetting technique. The structures are applied as sensor for label-free analysis of organic substances in ppb range, such as drug residues in groundwater. The measurements are carried out by means of a Surface-enhanced Raman scattering (SERS) effect, an exchangeable sensor head, and a portable Raman device. This method allows in situ applications. Parathiocresol is used as a model substance to characterize the SERS cells. For metallization, gold and silver are compared. Reproducible SERS enhancement factors up to 10 7 are evaluated. Y1 - 2021 SN - 978-3-9819376-4-0 U6 - https://doi.org/10.5162/SMSI2021/B8.2 SP - 153 EP - 154 PB - AMA Association for Sensors and Measurement ER - TY - INPR A1 - Menzel, Andreas A1 - Yeh, Wang-Chi Vincent A1 - Kammler, Martin A1 - Hupalo, Myron A1 - Conrad, E. H. A1 - Tringides, Michael C. T1 - Measurements of the kinetic barriers controlling the formation of the uniform height islands in Pb/Si(111) N2 - As demonstrated with SPA-LEED and STM uniform height islands of preferred thickness form during the growth of Pb on Si(111). The islands form at temperatures T<250K and for fluxes F 1/60ML/sec which requires fast kinetics and balance between several atomic processes: diffusion towards the islands , diffusion to higher layers and preference for the atoms to remain on top of the preferred height islands. We have carried out SPA-LEED experiments to measure the barriers of the processes: we prepare an initial predominantly 5-step island height distribution and we deposit an additional 0.5ML Pb at different growth temperatures Tg to determine the transition to the next preferred height of 7-step islands (i.e. 2-step islands on top of the 5-step islands) with Spot Profile Analysis(SPA-LEED). We observe that 7-step island formation is possible above a minimum temperature Tg*=175K which indicates that the transfer of atoms from the surrounding region to the top of the islands is the main controlling process. Y1 - 2002 UR - https://www.researchgate.net/publication/259264144_Measurements_of_the_kinetic_barriers_controlling_the_formation_of_the_uniform_height_islands_in_PbSi111 ER - TY - INPR A1 - Cavalleri, Andrea A1 - Siders, Craig A1 - Toth, Csaba A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, Dietrich A1 - Kammler, Martin A1 - Horn- von Hoegen, Michael T1 - Measurement of harmonic and anharmonic semi-conductor-lattice dynamics with ultrafast x-ray diffraction N2 - Many fundamental processes in solids, such as heat transport and phase transitions involve atomic movement on ultrafast time-scales, but cannot be directly measured with visible light. Using ultrafast x-ray diffraction, atomic motion can be measured on its natural time-scale. Photo-excitation of bulk and layered semiconductors was achieved with 800-nm wavelength femtosecond laser pulses. Optical excitation triggers a chain of relaxation processes, causing rapid lattice heating, generation and propagation of stress/strain waves into the bulk and eventual anharmonic decay of coherent acoustic phonons into the thermal bath of the solid. While the first steps of carrier relaxation, excitation and decay of Raman-active optical phonons have been in the past characterized optically at surfaces, the bulk acoustic dynamics at longer times has not. We measure length scales of lattice excitation, thereby detecting ultrafast heat diffusion via fast electrons, coherent acoustic pulse propagation into the bulk or across buried interfaces and anharmonic damping of non-equilibrium acoustic phonons. The measurement is performed with sensitivity on lattice spacing of 10 femtometers (i.e., 3 nuclear diameters). Y1 - 2000 UR - https://www.researchgate.net/publication/252175863_Measurement_of_harmonic_and_anharmonic_semi-conductor-lattice_dynamics_with_ultrafast_x-ray_diffraction ER - TY - INPR A1 - Siders, Craig A1 - Cavalleri, Andrea A1 - Toth, Csaba A1 - Squier Jeff A., A1 - Barty, C. P. J. A1 - Wilson, K. R. A1 - Sokolowski-Tinten, Klaus A1 - von der Linde, Dietrich A1 - Kammler, Martin A1 - Horn- von Hoegen, Michael T1 - Ultrafast Nonthermal Melting of Femtosecond-laser-irradiated Germanium Measured by Ultrafast X-ray Diffraction N2 - Many fundamental processes in nature, such as chemical reactions and phase transitions involve rearrangement of the constituent atoms. Such changes cannot be directly measured with visible light and occur transiently on time-scales comparable with the natural oscillation periods of atoms (femtoseconds to picoseconds). We present experiments on Ge-111 films irradiated with 100-fs 800-nm light pulses and probed by a time-delayed sub-ps x-ray pulse at 8 keV. After excitation of a dense electron-hole plasma within the 160-nm film, the ultrafast pathway of lattice disordering is measured as a function laser fluence. For close-to-threshold irradiation, inhomogeneous thermal melting, occurring via surface nucleation of the liquid phase and growth into the bulk determines the dynamics of the solid-to-liquid phase transition. For excitation at about twice the melting threshold, a nonthermal pathway, starting from a highly excited cold solid and relaxing into a hot liquid causes ultrafast melting. At long time delays, nearly perfect recrystallization of a (111) crystal is observed. Y1 - 2000 UR - https://www.researchgate.net/publication/252159566_Ultrafast_Nonthermal_Melting_of_Femtosecond-laser-irradiated_Germanium_Measured_by_Ultrafast_X-ray_Diffraction ER - TY - JOUR A1 - Chee, See Wee A1 - Kammler, Martin A1 - Graham, Jeremy A1 - Gignac, Lynne A1 - Reuter, Mark C. A1 - Hull, Robert A1 - Ross, Frances M. T1 - Directed Self-Assembly of Ge Quantum Dots Using Focused Si2+ Ion Beam Patterning JF - scientific reports N2 - We show that templating a Si surface with a focused beam of Si2+ or Si+ ions can create suitable nucleation sites for the subsequent growth of self-assembled Ge quantum dots by chemical vapor deposition. To determine the mechanism of patterning we use atomic force microscopy to show that, similar to Ga+ patterning, the formation of a surface pit is required to enable control over Ge quantum dot locations. We find that relatively high implantation doses are required to achieve patterning, and these doses lead to amorphization of the substrate. We assess the degree to which the substrate crystallinity can be recovered by subsequent processing. Using in situ transmission electron microscopy heating experiments we find that recrystallization is possible at the growth temperature of the Ge quantum dots, but defects remain that follow the pattern of the initial implantation. We discuss the formation mechanism of the defects and the benefits of using Si ions for patterning both defects and quantum dots on Si substrates. KW - ARRAYS KW - AU KW - DAMAGE KW - GROWTH KW - IMPLANTATION KW - NUCLEATION KW - RECOVERY KW - silicon KW - TECHNOLOGY Y1 - 2018 U6 - https://doi.org/10.1038/s41598-018-27512-z VL - 8 SP - 1 EP - 10 PB - Nature ER - TY - JOUR A1 - Melekhov, Evgeny A1 - Penn, Tatjana A1 - Weidauer, Tobias A1 - Abb, Valerius A1 - Kammler, Martin A1 - Lechner, Alfred T1 - Tunable nanopillar array on a quartz-fiber tip for surface enhanced Raman scattering (SERS) detection JF - tm - Technisches Messen N2 - In this work, a simple two-step method to create tunable self-assembled three-dimensional nanostructure array-like nanoantennas directly on the tip of an optical quartz glass fiber is described. The structures are prepared by using dry etching of the fiber tip. For the etching process, gold nanoparticles fabricated by thermal dewetting technique were used as template. The structures are applied as sensors for label-free analysis of organic substances in ppb range, such as drug residues in liquid solutions. The measurements are carried out by a portable Raman device with an exchangeable sensor head utilizing the SERS-effect. This method allows in situ applications. In order to characterize the SERS cells, para-thiocresol and diclofenac sodium are used as model substances. For optimization of the substrate performance, different thicknesses of the dewetting-layer (6, 9, 12 nm), different etching times for formation of the pillars (6, 8, 10 and 12 min), and different thicknesses of SERS-metallization (25, 50, 75 nm) of gold and silver are compared. In order to show the applicability of the structure on the tip of a fiber, measurements from the upper side and from the underside of the substrate on quartz plates are compared. Reproducible SERS enhancement factors up to 10 7 {10^{7}} were achieved. N2 - In dieser Arbeit wird eine zweistufige Methode beschrieben, um einstellbare selbstorganisierte dreidimensionale SERS-aktive Nanostrukturen in Form von Nanosäulen auf der Spitze einer optischen Quarzglasfaser herzustellen. Die Strukturen werden durch trockenchemisches Ätzen der Faserspitze erzeugt. Für den Ätzprozess werden als Maske Goldnanopartikel verwendet, die mittels Thermal Dewetting hergestellt werden. Der Sensor wird für eine markierungsfreie Analyse von organischen Substanzen, wie bspw. Medikamentenrückstände in wässrigen Lösungen, im ppb-Bereich eingesetzt. Die Messungen werden mit einem tragbaren Raman-Gerät mit einem austauschbaren Sensorkopf durchgeführt. Um die SERS-Zellen zu charakterisieren, werden para-Thiocresol und Diclofenac-Natrium als Modellsubstanzen verwendet. Zur Optimierung der Substratleistung werden unterschiedliche Dicken der Dewettinglayer (6, 9, 12 nm), unterschiedliche Ätzzeiten der Nanosäulen (6, 8, 10 und 12 min) und unterschiedliche Schichtdicken der SERS-Metallisierung (25, 50, 75 nm) von Gold und Silber verglichen. Um die Anwendbarkeit der Struktur an der Spitze einer Faser zu zeigen, werden Messungen von der Oberseite und von der Rückseite des Substrats in Form eines Quarzglasplatten verglichen. Diese Struktur liefert einen reproduzierbaren Verstärkungsfaktor von bis zu 107. T2 - Einstellbare Nanosäulenanordnung auf der Spitze einer Quarzglasfaser für oberflächenverstärkte Raman-Spektroskopie (SERS) Y1 - 2022 U6 - https://doi.org/10.1515/teme-2021-0093 VL - 89 IS - 1 SP - 70 EP - 81 PB - de Gruyter ER - TY - JOUR A1 - Kammler, Martin A1 - Chidambarrao, D. A1 - Schwarz, K. W. A1 - Black, C. T. A1 - Ross, Frances M. T1 - Controlled nucleation of dislocations by a spatially localized stress field JF - Applied Physics Letters N2 - We analyze the nucleation of dislocations in silicon at spatially localized stress fields generated by silicon nitride pads having a high intrinsic stress. The nucleation and final configuration of the dislocations were studied using hot-stage transmission electron microscopy and were compared with dislocation simulations based on calculations of the stress fields around the pads. We find that the simulated configurations match well with the experimental data, and we show that the dislocation configuration can be controlled by the pad size. Y1 - 2005 U6 - https://doi.org/10.1063/1.2061862 VL - 87 IS - 13 PB - AIP ER - TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Transition in growth mode by competing strain relaxation mechanisms BT - surfactant mediated epitaxy of SiGe alloys on Si JF - Applied Physics Letters N2 - Surfactant mediated epitaxy of Si(1−x)Gex alloys on Si(111) can, besides technological importance, clarify the influence of the lattice mismatch during surfactant mediated heteroepitaxial growth. For low Ge concentration we find an immediate layer-by-layer growth, whereas at high Ge concentration a roughening transition followed by relaxation of the lattice mismatch in a periodic dislocation network is preferred. This behavior can be explained by comparing the dislocation nucleation rate on a smooth surface with the island nucleation rate on a pseudomorphic film. Y1 - 2004 U6 - https://doi.org/10.1063/1.1803914 VL - 85 IS - 15 SP - 3056 EP - 3058 PB - American Institute of Physics ER - TY - JOUR A1 - Chee, See Wee A1 - Kammler, Martin A1 - Balasubramanian, Prabhu A1 - Reuter, Mark C. A1 - Hull, Robert A1 - Ross, Frances M. T1 - Microstructural changes in silicon induced by patterning with focused ion beams of Ga, Si and Au JF - Ultramicroscopy N2 - We use focused beams of Ga(+), Au(+) and Si(++) ions to induce local microstructural changes in single crystal silicon. The ions were delivered as single spot pulses into thin Si membranes that could subsequently be imaged and annealed in situ in a transmission electron microscope. For each ion, the focused ion beam implantation created an array of amorphous regions in the crystalline membrane. Annealing causes solid phase epitaxial regrowth to take place, but we show that the resulting microstructure depends on the ion species. For Ga(+) and Au(+), precipitates remain after recrystallization, while for Si(++), dislocation loops form around the periphery of each implanted spot. We attribute these loops to defects formed during solid phase epitaxial regrowth, with controlled placement of the loops possible. KW - dislocation engineering KW - focused ion beam KW - In situ electron microscopy KW - solid phase epitaxial regrowth Y1 - 2013 U6 - https://doi.org/10.1016/j.ultramic.2012.07.004 VL - 127 SP - 126 EP - 131 PB - Elsevier ER - TY - INPR A1 - Schwarz, Tobias A1 - Pastötter, Angelina A1 - Tran, Trung A1 - Schlosser, Marc A1 - Kaulen, Corinna A1 - Lechner, Alfred A1 - Kammler, Martin A1 - Slabon, Adam T1 - Effect of Temperature on the Growth of Cu(I)O Nanocubes: The Impact of the Copper Precursor Species T2 - SSRN N2 - Cuprous oxide (Cu2O) nanoparticles were synthesized using a wet chemical surfactant free method at different synthesis temperatures from 25 ◦C to 60 ◦C. Morphology, size, and chemical composition of the prepared Cu2O nanoparticles were analyzed by SEM, PXRD, and ATR-IR. We discovered that the chemical composition of the Cu2O nanoparticles remained unaffected by the synthesis temperature. However, morphology and size of the nanoparticles showed a strong temperature dependency. This could be attributed to the temperature induced formation of cupric oxide (CuO) species from the copper hydroxide (Cu(OH)2 ) precursor which also functions as copper precursor for the Cu2O nanoparticle growth. The cupric oxide species was determined to be the main cause for the formation of micrometer sized particles, whereas with the Cu(OH)2 precursor species for the Cu2O nanoparticles nanocubes with smaller edge lengths as well as octahedrons were obtained. KW - nanoparticle KW - Copper oxide KW - crystal growth KW - Crystal structure Y1 - 2024 U6 - https://doi.org/10.2139/ssrn.4909639 PB - Elsevier ER - TY - JOUR A1 - Sokolowski-Tinten, Klaus A1 - Blome, Christian A1 - Blums, Juris A1 - Dietrich, Clemens A1 - Tarsevitch, Alexander A1 - Horn-von Hoegen, Michael A1 - von der Linde, Dietrich A1 - Cavalleri, Andrea A1 - Kammler, Martin A1 - Uschmann, Ingo A1 - Foerster, Eckhart T1 - Femtosecond X-ray Diffraction Study of Large Amplitude Coherent Optical Phonons in Laser-Excited Bismuth JF - Conference on Lasers and Electro-Optics, 1–6 June 2003, Baltimore, Maryland N2 - Femtosecond time-resolved X-ray diffraction was used to directly study optical phonons in laser-excited Bismuth. A periodic modulation of the diffraction efficiency reveals initially coherent lattice distortions with atomic displacements of nearly 10% of the nearest- neighbor-distance. Y1 - 2003 UR - https://opg.optica.org/abstract.cfm?uri=cleo-2003-CMZ6 PB - Optical Society of America ER - TY - JOUR A1 - Wall, Simone A1 - Krenzer, Boris A1 - Wippermann, Stefan A1 - Sanna, Simone A1 - Klasing, Friedrich A1 - Hanisch-Blicharski, Anja A1 - Kammler, Martin A1 - Schmidt, Wolf Gero A1 - Horn-von Hoegen, Michael T1 - Atomistic picture of charge density wave formation at surfaces JF - Physical review letters N2 - We used ultrafast electron diffraction and density-functional theory calculations to gain insight into the charge density wave (CDW) formation on In/Si(111). Weak excitation by a femtosecond-laser pulse results in the melting of the CDW. The immediate freezing is hindered by a barrier for the motion of atoms during the phase transition: The melted CDW constitutes a long-lived, supercooled phase and is strong evidence for a first-order transition. The freezing into the CDW is triggered by preexisting adsorbates. Starting at these condensation nuclei, the CDW expands one dimensionally on the In/Si(111) surface, with a constant velocity of more than 80 m/s. Y1 - 2012 U6 - https://doi.org/10.1103/PhysRevLett.109.186101 VL - 109 IS - 18 PB - APS ER - TY - JOUR A1 - Frigge, Tim A1 - Kalus, Annika A1 - Klasing, Friedrich A1 - Kammler, Martin A1 - Hanisch-Blicharski, Anja A1 - Horn-von Hoegen, Michael T1 - Nanoscale Heat Transport in Self-Organized Ge Clusters on Si(001) JF - MRS Online Proceedings Library N2 - Ultrafast time resolved transmission electron diffraction (TED) in a reflection geometry was used to study the cooling behavior of self-organized, well defined nanoscale germanium hut and dome clusters on Si(001). The clusters were heated in a pump-probe scheme by fs-laser pulses. The resulting transient temperature rise was then determined from the drop in diffraction intensity caused by the Debye-Waller effect. From a cooling time of τ=177 ps we estimated a strongly reduced heat transfer compared with homogeneous films of equivalent thickness. Y1 - 2012 U6 - https://doi.org/10.1557/opl.2013.148 SP - 45 EP - 50 PB - Springer ER - TY - JOUR A1 - Möllenbeck, Simone A1 - Hanisch-Blicharski, Anja A1 - Schneider, Paul A1 - Ligges, Manuel A1 - Zhou, Ping A1 - Kammler, Martin A1 - Krenzer, Boris A1 - Horn-von Hoegen, Michael T1 - Ultra-fast Time-Resolved Electron Diffraction of Strongly Driven Phase Transitions on Silicon Surfaces JF - MRS Online Proceedings Library N2 - The dynamics of strongly driven phase transitions at surfaces are studied by ultra-fast time-resolved reflection high energy electron diffraction. The surfaces are excited by an intense fs-laser pulse (pump) and probed by an ultra-short electron pulse with variable time delay. The order-disorder phase transition from a c(4 × 2) to a(2 × 1) of the bare Si(001) surface shows a transient decrease of the intensity of the c(4 × 2) spots which recovers on a time scale of a few hundred picoseconds indicating the excitation of the phase transition. On Si(111) a monolayer of Indium induces a (4 × 1) reconstruction which undergoes a Peierls like phase transition to a (8 × "2") reconstruction below 100 K. Upon laser excitation with a fluence of 3.4 mJ/cm 2 at a temperature of 72 K the phase transition was strongly driven. The (8 × "2")-diffraction spots instantaneously disappears, while the intensity of the (4 × 1)-spots increases. This increase of the (4 × 1) spot intensity excludes an explanation by the Debye-Waller-Effect and is evidence for a true structural phase transition at a surface. © 2010 Materials Research Society. Y1 - 2009 U6 - https://doi.org/10.1557/PROC-1230-MM03-09 PB - Springer ER - TY - JOUR A1 - Lu, Wei A1 - Nicoul, Matthieu A1 - Shymanovich, Uladzimir A1 - Tarsevitch, Alexander A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael A1 - von der Linde, Dietrich A1 - Sokolowski-Tinten, Klaus T1 - Extreme Phonon Softening in Laser-excited Bismuth - Towards an Inverse Peierls-transition JF - MRS Online Proceedings Library N2 - Large amplitude coherent optical phonons have been investigated in laser-excited Bismuth by means of femtosecond time-resolved X-ray diffraction. For absorbed laser fluences above 2 mJ/cm2, the experimental data reveal an extreme softening of the excited A1g-mode down to frequencies of about 1 THz, only 1/3 of the unperturbed A1g-frequency. At even stronger excitation the measured diffraction signals no longer exhibit an oscillatory behavior presenting strong indication that upon intense laser-excitation the Peierls-distortion, which defines the equilibrium structure of Bismuth, can be transiently reversed. Y1 - 2009 U6 - https://doi.org/10.1557/PROC-1230-MM03-05 VL - 1230 PB - Springer ER - TY - JOUR A1 - Hanisch-Blicharski, Anja A1 - Krenzer, Boris A1 - Möllenbeck, Simone A1 - Ligges, Manuel A1 - Zhou, Ping A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Transient Cooling of Ultrathin Epitaxial Bi(111)-Films on Si(111) Upon Femtosecond Laser Excitation Studied by Ultrafast Reflection High Energy Electron Diffraction JF - MRS Online Proceedings Library N2 - With time resolved ultrafast electron diffraction the cooling process across the interface between a thin film and the underlying substrate was studied after excitation with short laser pulses. From the exponential decay of the surface temperature evolution a thermal boundary conductance of 1430 W/(cm2K) is determined for a 9.7 nm thin Bi(111) film on Si(111). A linear dependence between laser fluence and initial temperature rise was measured for film-thicknesses between 2.5 nm and 34.5 nm. The ratio of initial temperature rise and laser fluence for different film-thicknesses is compared to a model taking multilayer optics into account. The data agree well with this model. Y1 - 2009 U6 - https://doi.org/10.1557/PROC-1172-T04-08 SP - 1 EP - 6 PB - Springer ER - TY - JOUR A1 - Al-Falou, A. A. A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Strain state analysis of hetero-epitaxial systems JF - Europhysics Letters N2 - We present a new method to analyze the strain state of epitaxial hetero structures by high-resolution spot profile analysis low-energy electron diffraction. From the variation of the spot profiles with the vertical scattering vector we determine the hetero film roughness, the change of interlayer spacing due to tetragonal distortion, and the variation of the interlayer distance due to partial relaxation of the strained rough film. The practical implementation of this method is simple and can be used to determine the onset of strain-relieving defects during the growth process. Y1 - 2005 U6 - https://doi.org/10.1209/epl/i2004-10399-6 VL - 69 IS - 4 SP - 570 EP - 576 PB - IOP ER - TY - JOUR A1 - Kammler, Martin A1 - Horn-von Hoegen, Michael T1 - Low energy electron diffraction of epitaxial growth of bismuth on Si(111) JF - Surface Science N2 - The epitaxial growth of Bi on Si(1 1 1) studied by spot profile analyzing low energy electron diffraction shows for low coverage rotationally disordered Bi cluster with preferred orientations following the threefold symmetry of the Si substrate. With further deposition the Bi cluster coalesces and the surface orientation changes from the pseudo cubic Bi(1 1 0) surface orientation of the Bi cluster into the hexagonal Bi(1 1 1) surface of the resulting Bi film. KW - Bismuth KW - Epitaxial growth KW - LEED KW - low energy electron diffraction KW - Silicon KW - Structural transition Y1 - 2005 U6 - https://doi.org/10.1016/j.susc.2004.11.033 VL - 576 IS - 1-3 SP - 56 EP - 60 PB - Elsevier ER - TY - CHAP A1 - Siders, C. W. A1 - Cavalleri, Andrea A1 - Tóth, Csaba A1 - Wilson, K. R. A1 - Squier, Jeff A. A1 - Barty, C. P. J. A1 - Kammler, Martin A1 - Sokolowski-Tinten, Klaus A1 - Horn-von Hoegen, Michael A1 - von der Linde, D. T1 - Femtosecond X-ray diffraction of short-pulse irradiated semiconductors T2 - Summaries of Papers Presented at the Lasers and Electro-Optics. CLEO '02. Technical Diges, 24-24 May 2002, Long Beach, CA, USA N2 - Summary form only given, as follow. Ultrafast optical-pump, X-ray diffraction probe experiments are providing new ways to study transient processes including the direct observation of the atomic motion by which many solid-state processes and chemical and biochemical reactions take place. Current table-top-terawatt femtosecond laser systems provide an attractive source of few-hundred femtosecond duration bursts of angstrom-scale X-ray radiation with fluxes comparable to standard rotating anode sources. Their compact size enables time resolved structural dynamics to be studied in the small laboratory with temporal resolution better than typical molecular vibrational periods. Ultrafast structural dynamics in crystalline samples are readily studied with such systems and experiments to be discussed in this talk include ultrafast non-thermal solid-to-liquid transition in thin single-crystal Ge-111 films grown on Si-111 substrates; ultrafast non-thermal solid-to-solid transitions in bulk vanadium dioxide from a low temperature insulating phase to a high temperature metallic phase; and harmonic and anharmonic coherent acoustic dynamics in layered Ge-111/Si-111 and bulk GaAs-111 samples. Future improvements in high-average power short-pulse lasers will enable the study of a wider class of materials such as amorphous solids or liquid-phase dynamics of simple molecules, while proposed 4th generation light sources based upon single-pass X-ray free-electron lasers will permit singleshot structural determination of complex biomolecules. KW - high-speed techniques KW - X-ray diffraction KW - laser beam effects KW - semiconductor materials KW - solid-liquid transformations KW - solid-state phase transformations KW - metal-insulator transition Y1 - 2002 U6 - https://doi.org/10.1109/CLEO.2002.1033997 SP - 297 EP - 298 PB - IEEE ER -